IRF635 Search Results

F634

Abstract: irf635 IRF634d IRF637
Contextual Info: IRF634, IRF635 IRF636, IRF637 23 H A R R I S N-Channel Power MOSFETs Avalanche Energy Rated A u g u st 1991 Package Features T O -22 0 A B • 8.1A and 6.5A, 250V - 275V T O P VIEW • rps on = 0.45ft and 0.68H • Single Pulse Avalanche Energy Rated • S O A is Power-Dissipatlon Limited

diode c248

Abstract: irf6348 DIODE C249 IRF635 jh32 C248 diode irf634 9476A MOSFET IRF635
Contextual Info: h e D I • 4flss4sa oGoaina ? I ■ Data Sheet No. PD-9.476A INTERNATIONAL R E C T I F I E R T-39-11 INTERNATIONAL RECTIFIER IX R HEXFET TRANSISTORS IRF634 IRF635 N -C H A N N E L Features 250 Volt, 0.45 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology is the key to International

IRF635

Abstract: IRF637 IRF636 IRF634 F634 fs34 diode IFIF634 IFIF636 IFIF637 irf634 mosfet
Contextual Info: _ Rugged Power MOSFETs F ile N u m b e r IRF634, IRF635, IRF636, IRF637 2168 Avalanche Energy Rated N-Channel Power MOSFETs N -C HANNEL EN HANCEM ENT MODE 8.1 A, and 6.5A, 275, 250V Tds on = 0.45Q, 0.68Q Features: • Single pulse avalanche energy rated

IRFB36

Abstract: 1RF634
Contextual Info: _ • 4305271 DDSMDea b 47 ■ HAS lì H A R R IS IRF634, IRF635 IRF636, IRF637 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T 0 -2 2 0 A B • 8.1A and 6.5A, 250V - 275V TOP VIEW • i'DS(°n = 0 .4 5 0 and 0 .6 8 fi DRAIN

1RF540

Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
Contextual Info: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)

1RF530

Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)

1rf740

Abstract: 1RF840 1rf820 1RF634 1RF630 1rf730 IRF810 1RF645 IRF112 IRF645
Contextual Info: - 254 - f M £ tt ft X Vd s or € £ Vg s fé < T a = 2 5 cC Id Pd ÏI Ig s s Id s s th) ft Ta=25‘ C) Ds(on) Vi>s= I d (on) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1- B m % Vg s = 0

1RF630

Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
Contextual Info: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)

IRFZ30

Abstract: IRFZ45 IRFZ32 irfz IRFZ12 THOMSON DISTRIBUTOR 58e d IRFZ20 IRFZ25 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: THOriSÜN/ DISTRIBUTOR SflE D • ÌOat.073 OOOSaDl HEXFET Powermosfets L^ l m TCSK intemaraonal Rectifier Plastic Insertable Package T0-220 N-Channel Part Number V p s Drain Source Voltage Volts R0S(on) On-State Resistance (Ohms) Iq Continuous Drain Current

1rf730

Abstract: 1rf740 1RF840 1RF630 IRF810 1RF711 IRFI13 IRF643 IRF644 IRF711
Contextual Info: - 254 - f M tt £ ft X Vd s or € £ Vg s fé < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) ft % Vi>s= Ta=25‘ C) I d (on) D s (o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) (max) (max) (max) (pF) (pF) (pF) Vg s = 0 Vg s * /CH Vd g * /CH min Vg s

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

1RF640

Abstract: 1rf630 IRF810 1RF633 1RF634 1RF522 1rf740 Rf644 IRF530 IRF533
Contextual Info: - £> tt £ * f m V Vd s or € * Vdg Hr V £ Vg s tS eg. (Ta=25*0) Id Pd loss I gss Vg s th) 14 ft lo(on) F Ds(on) Vd s = g fs Ciss Coss * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) *typ Id (*typ) (max) (*typ) (max) (max) (S) (A) (pF)

1rf740

Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
Contextual Info: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-

1RF620

Abstract: 1RF540 1RF630 1RF640 1RF530 1RF520 IRF625 RF543 BS250F BS107PT
Contextual Info: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC

1RF640

Abstract: 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620 IRF530
Contextual Info: - 253 f m * V Vd s £> tt £ £ Vg s Id Igss Pd V g s th loss or € * Vdg Hr V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) F Ds(on) Vd s = Vg s Id (mA) 14 ft eg. tS (Ta=25*0) (Ta=25T3) lo(on) Ciss g fs Coss ft & 11 m Vg s =0 (max)

1RF530

Abstract: 1RF540 1rf630 RF543 BS107PT BS250F SD210 SD211 SD212 TD-12
Contextual Info: - 244 - ä! € tt f # t Vd s * $ fg Vg s Ta=25‘ C ie. IGSS Pd Id Vg s ID S S th) or € * /CH * /CH (A) m (Ta^'C) Ciss max Vd s (V) Vg s (V) 14 Coss Crss (V) (nA) SD2 1 0 CALOGIC N 30 ± 40 5 0m 1. 2 SD211 CALOGIC N 30 25 50m 1. 2 SD212 CALOGIC N 10 ± 40

1rf740

Abstract: 1RF642 1rf730 1RF640 1RFD110 1RF840 IRF643 IRF644 IRF711 IRF712
Contextual Info: - 254 - f M £ tt € ft X £ Vd s or Vd g Vg s fé <Ta=25cC Id Pd * /CH * /CH ÏI Ig s s V g s th) Id s s min 1D nA) (Ta=25‘C ) Id (on) D s(o n ) Vi>s= Vg s max ft g fs Ciss Coss Crss $1- B m % V g s =0 (max) *typ V g s (V) (0) *lyp (A) (nA) IRF642 IR

Contextual Info: SAMSUNG ELECTRO NICS IN C b?E D • 7 S b m i42 G0 1 7 2 Ô3 I b b ■ N-CHANNEL POWER MOSFETS IRF634/635 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

IRF9634

Abstract: MJE13001 KT538A KT8296 KT829 KT940A kt8290 KT8270A MJE-13001 IRML2402
Contextual Info: DISCRETE SEMICONDUCTOR Transistors • Bipolar Transistors Part KT6136A KT6137A КТ607А-4 КТ607Б-4 КТ646А КТ646Б КТ646В KT660A KT660Б КТ805АМ КТ805БМ КТ805ВМ КТ805ИМ KT814A KT814Б KT814B KT814Г KT815A KT815Б KT815B KT815Г

IL311ANM

Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.

IRFP237

Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244
Contextual Info: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13

1rf634

Abstract: IRFZ25 international rectifier 9509 9374 9313 irf635 IRF71Q 9327
Contextual Info: IO R PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER 5bE D 4 Ô SS 4S E O G I D S S S 3 TO-220 Package '- • N-CHANNEL Types Vos V fifl OU Po pulsed max Ü A A W 210 190 120 100 60 56 40 33 150 150 90 90 60 60 36 36 28.0 25.0 14.0

1rf520

Abstract: 1RF540 1RF620 1RF640 IRF510 RF523 IRF530 IRF532 IRF533 IRF541
Contextual Info: - 253 £> tt £ f m * £ V Vd s Vg s € Id Pd Vg s th lo s s I gss or * V dg Hr V) (V) ft eg. t S (Ta=25*0) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Id (mA) (Ta=25T3) lo (o n ) F Ds(on) Vd s = Vg s 14 C is s g fs Coss ft & 11 m Vg s =0