HAT1021R Search Results

chn 706

Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline S O P -8 5 6 7 8 D D D D 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

HAT1021R-EL-E

Abstract: HAT1021R
Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching REJ03G1144-0600 Previous: ADE-208-475D Rev.6.00 Sep 07, 2005 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D

Hitachi DSA00276

Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475D Z 5th. Edition Feb. 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4 G

HAT1021R

Abstract: MS-012AA Hitachi DSA00240
Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 D Z 5th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D

Hitachi DSA002759

Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 B Z 3rd. Edition October. 1996 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D

Hitachi DSA002752

Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 D Z 5th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 5 6 7 8

Hitachi DSA002779

Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 C 4th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT1021R Absolute Maximum Ratings Ta = 25°C

V1LD

Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-475 C 4th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SO P-8 5 6 7 8 D D D D % 1,2,3 Source

Hitachi DSA002751

Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 C Z 4th. Edition June 1997 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4

HAT1021R

Abstract: MS-012AA Hitachi DSA0073
Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 B Z 3rd. Edition October. 1996 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D

Contextual Info: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline SOP-8 5 6 7 8 D D D D 1 ,2 ,3 Source 4 Gate 5, 6, 7, 8 Drain

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

HAT2005F

Abstract: HAT1001F
Contextual Info: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SJ408 L 2SJ505(L) 2SJ408(S) 2SJ505(S) HAT1001F

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

HAT1021R-EL-E

Abstract: HAT1021R
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4