D40C1 Search Results

ge D45E3

Abstract: D45E3 d45e3 replacement 4cti D41K1 D40C1 D40C2 D40C3 D40C4 D40C5
Contextual Info: SILICON POWER DARLINGTON TRANSISTORS NPN - HIGH GAIN Pt T c = 25°C GE Type W> D40C1 V CEO Min. (V 1 Ccmt. (A l 30 5 6 .2 5 hp£ 5 V , 200m A M in. M ax. 10,0 00 6 0 ,0 0 0 ft Typical (M H z) Package Type COM M ENTS 8R O M I Pfcwér/Ta • V e ry High Gain: 6 0 k ty p ic a l.

PNP Relay Driver

Abstract: Complementary Darlington Audio Power Amplifier power transistor audio amplifier 500 watts D40K2 ge d44e1 D40C7 D41K2 D41K4 D40C8 200 watts audio amp power transistors
Contextual Info: SILICON POWER DARLINGTON TRANSISTORS NPN - HIGH GAIN Pt T c = 25°C G E Type W> D40C1 Min. (V 1 Ccmt. (A l 30 5 V CEO 6.2 5 hp£ 5 V , 200m A Min. Max. 1 0 ,0 0 0 6 0 ,0 0 0 ft T yp ical (M Hz) Package T yp e CO M M EN TS 8RO M I Pfcwér/Ta • V e ry High G ain : 6 0 k ty p ic a l.

D40K1

Abstract: D40KI pnp transistor 800v NPN power transistor 15A amperes D41K1 transistor darlington 800V 10A D40C7 Complementary Darlington Audio Power Amplifier transfor D40C1
Contextual Info: SILICON POWER DARLINGTON TRANSISTORS NPN - HIGH GAIN Pt T c = 25°C GE Type W> D40C1 Min. (V 1 Ccmt. (A l 30 5 V CEO 6 .2 5 hp£ 5 V , 200m A M in. M ax. 10,0 00 6 0 ,0 0 0 ft Typical (M H z) Package Type COM M ENTS 8R O M I Pfcwér/Ta • V e ry High Gain: 6 0 k ty p ic a l.

power transistor audio amplifier 500 watts

Abstract: D45E2 D40C2 D40C7 Complementary 1 watt Darlington Audio Power Amplifier D40C1 T75 TYPE 2000 D40C3 D40C4 D40C5
Contextual Info: SILICON POWER DARLINGTON TRANSISTORS NPN - HIGH GAIN Pt T c = 25°C GE Type W> D40C1 Min. (V 1 Ccmt. (A l 30 5 V CEO 6 .2 5 hp£ 5 V , 200m A M in. M ax. 10,0 00 6 0 ,0 0 0 ft Typical (M H z) Package Type COM M ENTS 8R O M I Pfcwér/Ta • V e ry High Gain: 6 0 k ty p ic a l.

Central D40C1

Abstract: D40C1
Contextual Info: Datasheet D40C1 Central NPN SILICO N DARLIN G TO N P O W ER T R A N SIST O R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JE D E C TO-202 C A S E Sem iconductor Corp. Manufacturers of World Class Discrete Semiconductors

ge d44e1

Abstract: GE D44E3 D45E2 D44E3 "Solenoid Driver" D40C7 D40C5 D40K1 D41K1 d44e1 replacement
Contextual Info: SILICON POWER DARLINGTON TRANSISTORS NPN - HIGH GAIN Pt T c = 25°C G E Type W> D40C1 Min. (V 1 Ccmt. (A l 30 5 V CEO 6.2 5 hp£ 5 V , 200m A Min. Max. 1 0 ,0 0 0 6 0 ,0 0 0 ft T yp ical (M Hz) Package T yp e CO M M EN TS 8RO M I Pfcwér/Ta • V e ry High G ain : 6 0 k ty p ic a l.

Contextual Info: preliminary spec Model Number AC-D40C1.1ARDN TM POWER DESIGNS Type: Constant Current LED Driver Input Voltage: 120-277V Input Frequency: 50/60Hz ELECTRICAL SPECIFICATIONS: Output Power Max Input Power Input Current 40W 47W 0.39A @ 120V 0.17A @ 277V Minimum PF Max. THD

darlington power transistor 10a

Abstract: D40C1 TO-202 transistor NPN
Contextual Info: D40C1 NPN SILICON DARLINGTON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR D40C1 type is an NPN silicon Darlington power transistor designed for general purpose amplifier applications where high gain is required.

NSDU45

Abstract: D40C5 B0517 NSD154 D40K1 T0-202 marking WM npn darlington transistor 150 watts NSD-U45 MPSa13 451
Contextual Info: 40 Devices ; “ i f s'il : Darlington Transistors continued NPN h FE •c PNP 2N6724 ]> Max (Amps) Min 1 25,000 b50113D 003^534 ^CE(sat)® *C * •b lc Max 15,000 451 H P 0 (Amb) (MHz) mA (Volts) Max mA »«A Min 200 1.0 200 2mA 100 500 1.5 1A MNSCS

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

D40C2

Contextual Info: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

D40C4

Abstract: D40C7 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: 3 8 7 5 0 Í ^ G E SOLID STATE ~~Ql 3075001 001^037 4 ^ J ~ VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS T-33-29 D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designed fordriver, regulator, touch switch, I.C. driver, audio output,'relay substitute, oscillator, servo~ampllfier, and

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power