NSDU45
Abstract: D40C5 B0517 NSD154 D40K1 T0-202 marking WM npn darlington transistor 150 watts NSD-U45 MPSa13 451
Contextual Info: 40 Devices ; “ i f s'il : Darlington Transistors continued NPN h FE •c PNP 2N6724 ]> Max (Amps) Min 1 25,000 b50113D 003^534 ^CE(sat)® *C * •b lc Max 15,000 451 H P 0 (Amb) (MHz) mA (Volts) Max mA »«A Min 200 1.0 200 2mA 100 500 1.5 1A MNSCS
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bsd113d2n6724o-237d40c4+10t0-202d40c5nsd154nsdu45b0517d40k1marking wmnpn darlington transistor 150 wattsnsd-u45mpsa13 451
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SOT 23 1ft
Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
Contextual Info: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*
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n54842n54852n5486mmbf5484+8mmbf5485mmbf5486ot-23sot 23 1ft2n54842ns4841ft sot23transconductance 2n5485
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DIODE 3L2
Abstract: Complementary MOSFET Half Bridge
Contextual Info: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to
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nps8852hb5d113qdiode 3l2complementary mosfet half bridge |
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NDS8839H
Abstract: Complementary MOSFET Half Bridge
Contextual Info: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
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nds8839hbs0113dcomplementary mosfet half bridge |
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4-221
Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
Contextual Info: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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nds9958b5011300q400bl4-221+2transistor mosfet n-ch drain currentdual n & p-channel mosfet
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TN2905A
Contextual Info: TN2905A Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r ~ TN2905A PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. S ee P N 29 0 7 A for characteristics.
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2n5461
Abstract: 2N5462 2N5461 equivalent 2N5460 Low noise audio amplifier MMBF5460 mmbf5461
Contextual Info: S e m i c o n d u c t o r " MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 Mark: 6E /61U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
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2n54602n54612n5462mmbf5460+3mmbf54612n5461 equivalentlow noise audio amplifier
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NDT3055L
Abstract: 401H6
Contextual Info: e» N a t i on a l M a rch 1 9 9 6 Semiconductor" NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode field effect transistors are produced using National's proprietary, high cel! density, D M O S technology.
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ndt3055lbsd1130b50113d401h6 |
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NDT014
Abstract: lc 501130
Contextual Info: National June 1996 Semiconductor" NDT014 N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancem ent m o d e pow er field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS tech no lo g y.
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ndt014bs0113dgdmdd73b50113d+1lc 501130
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NDC7001C
Abstract: VX25
Contextual Info: National Semiconductor'" M arch 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS
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ndc7001cts0113gq03t7t3vx25 |
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1403
Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Contextual Info: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.
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mmbd1401ot-23mmbd1404umbd1403+5mmbd1405b50113d1403r20 markingm3325
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BSS63
Contextual Info: BSS63 Discrete POW ER & Signal Technologies A National Semiconductor" BSS63 Mark: T3 PNP General Pupose Amplifier This device is designed for general purpose am plifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum RatinQS*
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bss63l501130 |
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BC547 surface mount
Abstract: BC548 T0-92 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97
Contextual Info: Low Noise Amplifiers t.3E D Min Max mA MHz Min BC546 110 450 2 10 300 Typ T0-92(97) 1,2C BC846 110 0.01 10 300 Typ TO-236* 1,2C PNP NPN Package Notes 2 BC556 75 475 2 10 300 Typ TO-92(97) 1,2C BC856 125 475 2 10 300 Typ TO-236* 1,2C 2N2484 100 500 0.01 3
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tsd1130bc546bc846t0-92+14o-236bc556bc856n3962pn4249pn4250abc547 surface mountbc548bc857 to92mpsa18 bc547bc856 to 92t0-9297bc857 to 92tis97
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NDS9933
Abstract: Transistor c 4138 LA 4138
Contextual Info: National w j f May 1996 Semiconductor” NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor G en eral D e sc rip tio n F eatu res These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DM0S technology.
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nds9933bsd113dtransistor c 4138la 4138 |
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B23 zener diode
Abstract: zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B
Contextual Info: National Semiconductor Ontnhfir 1QQ1 NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high
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ndp505a/ndp505bndp506a/ndp506bhsg113db23 zener diode+8zener diode b23ndp505andp506atransmitter and receiver mini camerahrd-b30m115b23 j zener diodendp505bndp506b
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NDH8447
Contextual Info: National Semiconductor May 1996 ” NDH8447 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m o d e p o w e r field - effect tran sisto rs are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.
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ndh8447hs01130 |
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333 marking Diode
Abstract: FDLL300 FDLL300A FDLL333
Contextual Info: Discrete POWER & Signal Technologies Semiconductor"' FDH/FDLL 300/A / 333 C O L O R B A N D M A R K IN G D E V IC E LL-34 DO-35 1ST B A N D 2ND B A N D FD LL3 0 0 FD LL300A BRO W N BRO W N GREEN Y ELLO W FD LL3 3 3 BRO W N BLU E THE PLACEMENT O F THE EXPANSION GAP
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300/ado-35ll-34fdll300+4fdll300afdll333mmbd1501/a-1505/a333 marking diode
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bc2378
Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
Contextual Info: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi
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ts0113dj15511sd1130bc2378+9box33cb0345b0348b0735b0346b073bb0736b0737b0633
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LD 1106 BS
Abstract: NDS8426
Contextual Info: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.
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