9002T Search Results

Contextual Info: VMK 90-02T2 Dual Power MOSFET Module VDSS Id25 = 200 V “ 83 A ^ D S o n “ 25 m Q Common-Source connected N-Channel Enhancement Mode Sym bol Test C onditions vv DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 6.8 kß 200 V VGS V GSM

VMO 440

Abstract: MOSFET Modules VMO 550-01F 40-06P1 C636 "MOSFET Modules" VKM 40-06P1
Contextual Info: MOSFET Modules N Channel Enhancement Types suffix "F“ = HiPerFET technology with intrinsic diode Voss V ► New ► VMO VMO VMO ► VMO ► VMO ► VMO ► VMO 150-01P1 550-01F 650-01F 580-02F 40-05P1 60-05F 80-05P1 100 100 100 200 500 500 500 •o* A

Contextual Info: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 2 3 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kΩ 200 V VGS Continuous ±20 V VGSM Transient

240AA

Abstract: IXTH7P50 Complementary MOSFETs ixys vmk
Contextual Info: il û n MOSFET Modules N-Channel Enhancement Mode Type V oss max. os «nk 1* VMO VMK VMM C ityp. typ. V max. °«, max. *^hJ8 max. pF pF ns nC K/W 4200 135 600 160 0.8 9200 570 400 450 53000 340 600 2300 Package style ' D max. See outlines on page 35/36 Tc = 25-C

50n60

Abstract: 50N100 AC SWITCH
Contextual Info: MOS/IGBT AC switch • Fast AC switch ■ Easy to turn-off like a MOSFET or IGBT ■ Applications - lighting control - AC motor control - matrix inverter C o n fig u ra tio n Typ e BV v o lta g e ► N ew VM K 165-007T > FM K 75-01F Rated current A T„ = 25 °C

9002B

Abstract: 5nc60
Contextual Info: ANALOG DEVICES High Speed 8-Bit Monolithic A/D Converter □ AD9002 FEATURES 150 M S P S E n co d e Rate L o w Inp ut C apacitance: 17 pF L o w Pow er: 750 m W -5.2 V S in g le S u p p ly M IL -S T D -8 8 3 C o m p lia n t V e r sio n s A va ilab le FUNCTIONAL BLOCK DIAGRAM

Contextual Info: ANALOG DEVICES □ FEATURES 150MSPS Encode Rate Low Input Capacitance: 17pF Low Power: 750mW -5 .2 V Single Supply MIL-STD-883 Compliant Versions Available High Speed 8-Bit Monolithic A/D Converter AD9002 F U N C T IO N A L B L O C K D IA G R A M APPLICATIONS

VMO 440

Abstract: 650-01F 1200NC VMO 550-01F ixys VMO 440 motor IG 2200 19 x 000 15 r
Contextual Info: MOSFET Modules Contents VDSS ID cont RDS(on)max max. TC = 25°C TC = 25°C V A mΩ Ω 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 200 TO 240 Page VMK 90-02 T2 C3-6 VMM 85-02F C3-10 1) C3-14 C3-18 450 4.6 VMO 450-02F 500 4.2 VMO 500-02F 2)

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

Contextual Info: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 2 3 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kW 200 V VGS Continuous ±20 V VGSM Transient ±30

hy 1418

Abstract: 9002T D9002 D90-02
Contextual Info: ANALOG DEVICES HçfiSfDeed8-Bt Monolithic ADGbrMsrter Æ0OQ2 FEATURES 150 MSPS Encode Rate Low Input Capacitance: 17 pF Low Power: 750 mW -5 .2 V Single Supply MIL-STD-883 Compliant Versions Available F U N C T IO N A L B L O C K D IAG RA M APPLICATIONS Radar Systems

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

Contextual Info: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 1 2 3 VDSS = 200 V ID25 = 83 A Ω RDS on = 25 mΩ 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kΩ

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

21N50

Abstract: 6N80 MOSFET 11N80 PAGE-42 K 15N60 6N80A IXTM21N50 IXTH7P50
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channell Enhancement-Mode Type V DSS max. t jm = 150° c ► New IXTM 12N50A V 500 IXTM 21N50 IXTM 24N50 *025 □ DS<on C ies typ. C res typ. p PF PF K/W W LL 12 0.4 2800 70 600 120 0.7 180 5b 21 24 0.25 0.23 4200

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

Contextual Info: Dual Power M O SFET Module VM K 90-02T2 VD S S D 25 45 Common-Source connected N-Channel Enhancement Mode 1 2 3 67 Symbol Test Conditions Maximum Ratings Voss T J = 25°C to 150°C 200 V V» T j = 25°C to 150°C; R GS = 6.8 k n 200 V V« Continuous ±20 V

90-02T2

Abstract: ixys vmk
Contextual Info: l a i x Y S VMK 90-02T2 Dual Power MOSFET Module V,DSS I d 25 RDS on = 200 V = 83 A = 25 mQ Common-Source connected N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C 200 V Voon Tj = 25°C to 150°C; FtGS = 6.8 k£2

Contextual Info: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 2 3 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kW 200 V VGS Continuous ±20 V VGSM Transient ±30

Contextual Info: nixYS VMK 90-02T2 Dual Power MOSFET Module V DSS I D25 = 200 V = 90 A RDS on = 25 m fí Common-Source connected N-Channel Enhancement Mode Avalanche Rated TO-240 AA Preliminary data Maximum Ratings Symbol Test Conditions VDSS Tj = 25°C to 150°C 200 V VDGR

IXTH7P50

Contextual Info: VM M MOSFET Modules VM K N-Channel Enhancement Mode V DSS max. B *D25 Tc = 25°C A DS{on max. Te * 25°C mû ciM Cr8S typ. typ. trr typ. typ. Q0 ^thJS max. nF nF ns nC Package style K/W PD max. T > 2 5 “C W Fig. No. Type TJM = 150°C ► New ► VMM 600-007F *

esm 310

Abstract: bd-aj AD9002
Contextual Info: ANALOG DEVICES FEATURES 150 MSPS Encode Rate Low Input Capacitance: 17 pF Low Power: 750 mW -5 .2 V Single Supply MIL-STD-883 Com pliant Versions Available High Speed 8-Bit Monolithic A/D Converter AD9002 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Radar Systems