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7.2V Datasheets (500)

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Integrated Device Technology

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
72V01	Integrated Device Technology	512 x 9 AsyncFIFO, 3.3V	Original	PDF	190.02KB	12
72V01L15J	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 15NS 32-PLCC	Original	PDF	111.1KB
72V01L15J8	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 15NS 32-PLCC	Original	PDF	111.1KB
72V01L15JG	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 15NS 32-PLCC	Original	PDF	111.1KB
72V01L15JG8	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 15NS 32-PLCC	Original	PDF	111.1KB
72V01L25J	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 25NS 32-PLCC	Original	PDF	111.1KB
72V01L25J8	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 25NS 32-PLCC	Original	PDF	111.1KB
72V01L25JGI	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO 512X9 25NS 32-PLCC	Original	PDF	101.52KB
72V01L25JGI8	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO 512X9 25NS 32-PLCC	Original	PDF	101.52KB
72V01L25JI	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 25NS 32-PLCC	Original	PDF	111.1KB
72V01L25JI8	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 25NS 32-PLCC	Original	PDF	111.1KB
72V01L35J	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 35NS 32-PLCC	Original	PDF	111.1KB
72V01L35J8	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 35NS 32-PLCC	Original	PDF	111.1KB
72V02	Integrated Device Technology	1K x 9 AsyncFIFO, 3.3V	Original	PDF	190.02KB	12

72V02L15J	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 15NS 32PLCC	Original	PDF	111.1KB
72V02L15J8	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 15NS 32PLCC	Original	PDF	111.1KB
72V02L15JG	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 15NS 32PLCC	Original	PDF	111.1KB
72V02L15JG8	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 15NS 32PLCC	Original	PDF	111.1KB
72V02L25J	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 25NS 32PLCC	Original	PDF	111.1KB
72V02L25J8	Integrated Device Technology	Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 25NS 32PLCC	Original	PDF	111.1KB

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Panasonic Electronic Components


Panasonic Electronic Components ERJ-U6RD3572V Resistor: thick film; 35.7kΩ; SMD; 0805; 125mW; ±0.5%; 2x1.25x0.6mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	ERJ-U6RD3572V		5,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.04	Buy Now
Panasonic Electronic Components ERA3AED472V Resistor: thin film; 4.7kΩ; SMD; 0603; 100mW; ±0.5%; ERA3AED
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TME	ERA3AED472V		953		1	1 $0.17 10 $0.07 100 $0.05 1000 $0.04 10000 $0.04	Buy Now
Panasonic Electronic Components ERA6AEB3572V Resistor: thin film; 35.7kΩ; SMD; 0805; 125mW; ±0.1%; ERA6AEB
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TME	ERA6AEB3572V		20		1	1 $0.10 10 $0.07 100 $0.06 1000 $0.05 10000 $0.03	Buy Now
Panasonic Electronic Components ERA3AEB1872V Resistor: thin film; 18.7kΩ; SMD; 0603; 100mW; ±0.1%; ERA3AEB
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TME	ERA3AEB1872V				5,000	1 - 10 - 100 - 1000 - 10000 $0.03	Get Quote
Panasonic Electronic Components ERJH3ED2372V Resistor: thick film; 23.7kΩ; SMD; 0603; 125mW; ±0.5%; ERJH3ED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	ERJH3ED2372V				5,000	1 - 10 - 100 - 1000 - 10000 $0.03	Get Quote

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7.2V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
22AWGX2C Abstract: XC-600018 PRI 120VAC, 60HZ Contextual Info: AC Adapter 412-205054 41 1.614 43 (1.693) 58 (2.283) Nameplate DIMENSIONS: mm (In.) 22#AWGx2C UL/2468 1850 +50 -10 (72.8 Specifications for Primary: • Input Voltage 120VAC, 60Hz • DC Resistance +/- 15%: 270 OHM Specifications for Secondary Output: • Open Circuit Voltage +/- 5%: 7.2VAC	Original	ul/2468 120vac 500ma 500vdc +51500vac 500vac 22awgx2c xc-600018 pri 120vac, 60hz	PDF
RA07M1317MS Abstract: 135175MHz ra07m1317msa Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to	Original	ra07m1317msa 135-175mhz 175-mhz ra07m1317ms +1135175mhz	PDF
450W heatsink Abstract: PAF450F280-12 PAF450F280-24 PAF450F280-28 PAF450F280-48 PAF600F280-12 PAF600F280-24 PAF600F280-28 PAF-F280 DC-DC 200-400V Contextual Info: PAF-F280 Series 200V to 400VDC Input Full brick DC-DC Converters Output Voltages from 7.2V to 57V 450W to 600W Output Power Current Share Operation to 100°C Baseplate Wide Adjustable Output Range Key Market Segments & Applications Servers & Rail Systems	Original	paf-f280 400vdc 00-700w 00-450w +1300-400v 380vdc 00-1000w com/lp/products/paf400-series paf600f280-12 450w heatsink paf450f280-12 paf450f280-24 paf450f280-28 paf450f280-48 paf600f280-24 paf600f280-28 dc-dc 200-400v	PDF
RA03M8894M Abstract: RA03M8894M-101 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to	Original	ra03m8894m 889-941mhz 941-mhz ra03m8894m-101	PDF
DB35T Abstract: mitsubishi lot code RF MOSFET MODULE MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz transistor marking zg Mitsubishi transistor rf final H46S RA02M8087MD RA02M8087MD-101 MOSFET AMPLIFIER For MOBILE RADIO 869 MHz Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the	Original	ra02m8087md 806-869mhz 34dbm 16dbm +11300ma -26dbc db35t mitsubishi lot code rf mosfet module mosfet amplifier 3 stage for mobile radio 869 mhz transistor marking zg mitsubishi transistor rf final h46s ra02m8087md-101 mosfet amplifier for mobile radio 869 mhz	PDF
RA07M3340M Abstract: RA07M3340M-101 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to	Original	ra07m3340m 330-400mhz 400-mhz ra07m3340m-101	PDF
RA07M0608M-101 Abstract: RA07M0608M Pin-30mW RA07M0608 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to	Original	ra07m0608m 66-88mhz 88-mhz ra07m0608m-101 +2pin-30mw ra07m0608	PDF
RD12MVP1 Abstract: RD12MVS1 2040D Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V	Original	an-vhf-034-b rd12mvp1 135-175mhz 059xa-g +4175mhz 135/155/17meter rd12mvs1 2040d	PDF
RA07M4452M Abstract: generator 4.20 mA Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4452 RA07M4452M 07M4452MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier	Original	ra07m4452m ra07m4452msa 07m4452 440-520mhz +2520-mhz generator 4.20 ma	PDF
RD07MUS2B Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V	Original	an-900-039-a rd07mus2b 763-870mhz 084yh-g +8870mhz 250ma characteristic1ja01 grm1882c1h101ja01 single-stage amplifier grm2162c1h151jd01e 817mhz rd07m	PDF
GRM1882C1H100JA01D Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V	Original	an-900-040-a rd01mus1 rd07mus2b 763-870mhz +12086ze-g 250ma grm1882c1h100ja01d grm1882c1h grm1882c1h4r0cz01d grm1882c1h8r0dz01 grm1882c1h9r0dz01d rpc05-182 lqg11a8n2s00 grm1882c1h150ja01d grm1882c1h120ja01d grm1882c1h8r0dz01d	PDF
RD07MUS2B Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V	Original	an-vhf-047-a rd07mus2b 083yh-g 175mhz +11250ma 2302s 2306c rpc10t single-stage amplifier grm2162c1h101gd01e 135-175mhz grm2162c1h200gd01e grm2162c1h220gd01e grm2162c1h430gd01e grm2162c1h560gd01e	PDF
RD01MUS1 Abstract: adj 2576 Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V	Original	an-uhf-060-a rd01mus1 135mhz 100ma +4527mhz 0mm/50 an-uhf-060 adj 2576	PDF
KF1502-GT10A Abstract: KF50-HDA thermal printhead Contextual Info: KF1502-GT10A Printheads Compact low voltage thick film thermal printhead 6dots / mm KF1502-GT10A These compact, lightweight printheads have low power requirements and are intended for ECR and mobile applications. Drawing 7.2V, a maximum print speed of 2 inches per second is possible.	Original	kf1502-gt10a kf50-hda thermal printhead	PDF

Contextual Info: MITSUBISHI RF POWER MODULE M68763M 223-226MHZ, 7.2V, 5.3W, FM PORTABLE RADIO D im ensions in mm OUTLINE DRAWING BLOCK DIAGRAM PIN: © < o o © P in © vbb RF IN PU T 1st. DC S U P PLY BASE BIAS S U P PLY © V C C 2 2nd. DC S U P PLY 35±1 ©PO RF O U TP U T	OCR Scan	m68763m 223-226mhz	PDF
Contextual Info: MITSUBISHI RF POWER MODULE M68763L 180-200MHZ, 7.2V, 5.3W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm 1 LD O +l PIN: © < o o 0 P in © vbb RF IN PU T 1st. DC S U P PLY BASE BIAS S U P PLY © V C C 2 2nd. DC S U P PLY ©PO RF O U TP U T	OCR Scan	m68763l 180-200mhz	PDF
RA07M1317M Abstract: RA07M1317M-01 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to	Original	ra07m1317m 135-175mhz 175-mhz ra07m1317m-01	PDF
TRS-RLD-2240-3-12-480 Abstract: HI-POT B-8 Contextual Info: 1 2 3 4 5 6 7 SPECIFICATIONS Input Voltage Rating: Series Output Volt 5-8 : A Parallel Output Volt(5,7-6,8): HI-POT: B 8 9 480V 50Hz 14.4VAC±5%@0mA 12.6VAC±5%@200mA 7.2VAC±5%@omA 6.3VAC±5%@400mA Pri. To Sec., Pri. To Core 2500VAC/5mA/3Sec Sec. To Sec., Sec. To Core 1500VAC/5mA/3Sec	Original	200ma 400ma 2500vac/5ma/3sec 1500vac/5ma/3sec +2trs-rld-2240-3-12-480 hi-pot b-8	PDF
MOSFET TOSHIBA 2015 Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step	Original	2sk3476 100ma 300ma 500ma +3700ma 900ma mosfet toshiba 2015	PDF
GP 839 DIODE Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.	Original	rd01mus2 520mhz gp 839 diode gp 809 diode +7gp 841 diode mos fet 1127 rf transistor s-parameter vhf rd01mus2-101 t06 transistor 5343 transistor transistor m 839	PDF
LTC4440-5 Abstract: LTC1154 Contextual Info: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current	Original	ltc4444 ltc4449 ltc4441/ltc4441-1 ltc1154 +24444fb ltc4440-5	PDF
RA07M4452MSA Abstract: RA07M Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4452MSA RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to	Original	ra07m4452msa 440-520mhz 520-mhz ra07m	PDF
Mitsubishi transistor rf final Abstract: RA03M4547MD 1538d RA03M4547MD-101 POUT38 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4547MD RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4547MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the	Original	ra03m4547md 450-470mhz 38dbm 19dbm +6-25dbc 35dbm mitsubishi transistor rf final 1538d ra03m4547md-101 pout38	PDF
RA03M4043MD-101 Abstract: RA03M4043MD Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4043MD RoHS Compliance , 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4043MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the	Original	ra03m4043md 400-430mhz 38dbm 19dbm +3-25dbc 35dbm ra03m4043md-101	PDF

7.2V Search Results

7.2V Datasheets (500)

7.2V Price and Stock

Panasonic Electronic Components ERJ-U6RD3572V

Panasonic Electronic Components ERA3AED472V

Panasonic Electronic Components ERA6AEB3572V

Panasonic Electronic Components ERA3AEB1872V

Panasonic Electronic Components ERJH3ED2372V

7.2V Datasheets Context Search

22AWGX2C

RA07M1317MS

450W heatsink

RA03M8894M

DB35T

RA07M3340M

RA07M0608M-101

RD12MVP1

RA07M4452M

RD07MUS2B

GRM1882C1H100JA01D

RD07MUS2B

RD01MUS1

KF1502-GT10A

RA07M1317M

TRS-RLD-2240-3-12-480

MOSFET TOSHIBA 2015

GP 839 DIODE

LTC4440-5

RA07M4452MSA

Mitsubishi transistor rf final

RA03M4043MD-101