RA07M1317M Search Results

RA07M1317MS

Abstract: 135175MHz ra07m1317msa
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

RA07M1317M

Abstract: RA07M1317M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

RA07M1317MS

Abstract: RA07M1317MSA RA07M1317M-s RA07M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

RA07M1317M

Abstract: RA07M1317M-101 AT/RA07M1317M
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

RA07M1317M

Abstract: RA07M1317
Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING RA07M1317M ELETROSTATIC SENSmVE DEVICES Silicon MOS FET Power Amplifier, 135-175NIHz 6.5W PORTABLE RADIO OUTLINE DRAWING PIN: 1 Pin :RF INPUT 2 V gg :GATE BIAS SUPPLY 3 V dd :DRAIN BIAS SUPPLY

d408

Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to

RA07M1317MS

Abstract: RA07M1317M RF TRANSISTOR 1 WATT 07M1317
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M1317 RA07M1317M 07M1317MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier

RA07M1317M

Abstract: RF MOSFET MODULE RA07M1317M-101 135-175MHz marking code 6w
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

RA07M1317M

Abstract: RA07M1317M-01 RA07M1317M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range.

RA07M1317M-101

Abstract: 7.2volt RA07M1317M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

RA07M1317MS

Abstract: C 829 transistor
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE 123456764 1234567645 34567645829 829 OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier

Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA07M1317M Silicon MOS FET Power Amplifier, 135-175MHz 7W FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm 30 +/-0.2 26.6 +/-0.2 1.7 (4.4) 21.2 + /- 0.2

Power Semiconductors

Abstract: RF Power walkie talkie walkie talkie circuit reliability RA07M1317M RA45H4452M semiconductors walkie-talkie
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-030-E Date : 16th Jun. 2003 Rev. date : 22th.Jun. 2010 Prepared : T.Kajo,T.Okawa Confirmed : H.Nakao Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Reliability concept for Silicon RF Products

RM15TB-H

Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
Contextual Info: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;

walkie-talkie

Abstract: RF POWER RA07M1317M reliability Mitsubishi AA050MC01 RoHS 1000FIT RA45H4452M mitsubishi electric power semiconductors semiconductors
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-030-D Date : 16th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : T.Kajo,T.Okawa Confirmed : H.Nakao Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Reliability concept for Silicon RF Products