64K X 8 Search Results

IS61C256AH

Contextual Info: Org. 8K x 8 32K x 8 32K x 16 64K x 8 64K x 16 64K x 24 128K x 8 128K x 16 Part No. IS61C64AH IS61C64B IS61C256AH IS61LV256 1 IS62C256 IS62LV256(1) IS62LV256L(1) IS61C3216 IS61LV3216(1) IS61LV3216L(1) IS61C512 IS61C6416 IS61LV6416(1) IS61LV6424(1) IS61C1024

BNK-17

Contextual Info: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85

ftr 02

Abstract: F.TR.02 19 IDT BH package marking marking a7r
Contextual Info: AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V/89V 4K/8K/16K/32K/64K x 18 AL5DS9269V/79V/89V 16K/32K/64K x 16 AL5DS9149V/59V/69V/79V/89V/99V 4K/8K/16K/32K/64K/128K x 9 AL5DS9069V/79V/89V/99V 16K/32K/64K/128K x 8 Preliminary AL5DS9xx9V

Contextual Info: Org. 32K x 32 64K x 32 Part No. IS61C632A IS61LV632A IS61S6432 64K x 36 IS61SF6432 IS61LV6432 IS61NW6432 IS61SP6436 64K x 64 128K x 32 128K x 36 IS61SF6436 IS61SP6464 IS61LV6464 IS61SP12832 IS61SP12836 Speeds ns 4, 5, 6, 7, 8 5, 6, 7 200, 166, 133, 117, 100 MHz

IDT7M812

Contextual Info: IN T E G R A T E D DEVI CE 3ÛE D • 4ÔES771 Q0G7G1M fl ■ ID T 23-14 IDT7M812 IDT7M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CMOS static RAM module • 64K x 8 IDT7M812 or 64K x 9 (IDT7M912) configuration

7M912

Abstract: IDT7M912 Idt7m812 7M812
Contextual Info: Integrated Device Technology, Inc. IDT7M812 ID77M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CM OS static RAM module • 64K x 8 IDT7M812 or64K x 9 (IDT7M912) configuration • Fast access times — Military: 25ns (max.)

27C1100

Abstract: 27c1024-55 27C1024 MX27C1100 ups vh 2000 27C110 27C1024 equivalent MX27C1024QC-55
Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin out • 128K x 8 or 64K x 16 organization(MX27C1100, ROM • • • • • Operating current: 40mA • Standby current: 100uA • Package type:

27c1024

Abstract: 27C1024 equivalent EPROM sop 40 EPROM 40PIN 27C1100 MX27C1100
Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

CY7C191

Abstract: CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C199
Contextual Info: Qualification Report August 1995, QTP# 95137/95161, Version 1.0 256K SRAM, FAB 4 QUAL MARKETING PART NUMBER DEVICE DESCRIPTION CY7C191 64K x 4 Static RAM with Separate I/O CY7C192 64K x 4 Static RAM with Separate I/O CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small

saa 1291

Abstract: CY7C008 CY7C009 CY7C018 CY7C019 IDT7008
Contextual Info: iJë- CY7C008/009 CY7C018/019 : CYPRESS PRELIMINARY 64K/128K x 8/9 Dual-Port Static RAM Features True Dual-Ported memory cells which allow sim ulta­ neous access of the same memory location 64K x 8 organization CY7C008 128K x 8 organization (CY7C009) 64K x 9 organization (CY7C018)

MX27C1100

Contextual Info: Introduction Selection Guide MX27C1100/27C1024 1M-BIT 128K x 8/64K x 16 CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin out) • 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns

Contextual Info: DPZ64X32V □PM Dense-Pac Microsystems. Inc. ^ 64K X 32 FLASH Memory VERSAPAC PRELIMINARY DESCRIPTION: The DPZ64X32V is a 64K x 32 FLASH electrically erasable and programmable read only memory module built with four 64K x 8 FLASH memory devices. The module is a 66-pin PGA

KM428C64

Abstract: "Video RAM" Video RAM
Contextual Info: KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port Performance range : . Parameter Speed . RAM access time tR A c RAM access time (tc A c ) The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port

Contextual Info: Í D P M 7Dense-Pac Microsystems. Inc. 0 DPS1025 64K X 16 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESCRIPTIO N : The DPS1025 is a 64K X 8 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors

nobl sram

Abstract: 8361H CEL9200 CY7C1333 CY7C1334 JESD22
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97328 VERSION 1.2 November, 1999 64K x 32 SRAM with NoBL Architecture R42D Technology, Fab 4 CY7C1333 64K x 32 Flow-Through SRAM with NoBl Architecture CY7C1334 64K x 32 Pipelined SRAM with NoBl Architecture

"Dual-Port RAM" for video applications

Abstract: "32K x 16" dual port SRAM sram with address counter 3.3v counter
Contextual Info: AL5DS9xx9V 3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit Features True dual ported memory cells 17 Flow-Through/Pipelined devices: - 4K/8K/16K/32K/64K x 18-bit organization AL5DS9349V/59V/69V/79V/89V - 16K/32K/64K x 16-bit organization (AL5DS9269V/79V/89V)

low power sram 64k

Abstract: 9l reset 1517R
Contextual Info: AL5DS9xx9V 3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit Features ! True dual ported memory cells ! 18 Flow-Through/Pipelined devices: - 4K/8K/16K/32K/64K x 18-bit organization AL5DS9349V/59V/69V/79V/89V - 16K/32K/64K x 16-bit organization (AL5DS9269V/79V/89V)

x27c

Contextual Info: B k J B := . • E S ■ W f c r s i Wè ê ë ê MX27C1 100/27C1 024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • • Operating current: 40mA 64K x 16 organization MX27C1024, JEDEC pin out • Standby current: 100uA • 128K x 8 or 64K x 16 organization(M X27C1100,

Contextual Info: £ n D M 7 DPZ64X32V Dense-Pac Microsystems, Inc. 0 _ 64K X 32 FLASH Memory VERSAPAC PRELIMINARY DESCRIPTION: The D P Z 64 X 3 2V is a 64K x 32 FLASH electrically erasable and programmable read only memory module built with four 64K x 8 FLASH m emory devices. The module is a 66-pin PGA

ph44

Abstract: 71V016 IDT71V016
Contextual Info: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM

64k X 8

Abstract: E2PROM eprom e spi flash 8K x 8 eprom AT28C64 AT27BV010 AT27BV020 AT27BV040 AT27BV1024 AT27BV256
Contextual Info: Nonvolatile Memory Selection Guide EPROMs Part Number Organization TM Battery-Voltage Speeds Description 2.7V to 3.6V AT27BV256 AT27BV512 AT27BV010 AT27BV1024 AT27BV020 AT27BV4096 AT27BV040 32K x 8 64K x 8 128K x 8 64K x 16 256K x 8 256K x 16 512K x 8 70-150 ns