64K X 8 Search Results

IDT7M812

Contextual Info: IN T E G R A T E D DEVI CE 3ÛE D • 4ÔES771 Q0G7G1M fl ■ ID T 23-14 IDT7M812 IDT7M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CMOS static RAM module • 64K x 8 IDT7M812 or 64K x 9 (IDT7M912) configuration

7M912

Abstract: IDT7M912 Idt7m812 7M812
Contextual Info: Integrated Device Technology, Inc. IDT7M812 ID77M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CM OS static RAM module • 64K x 8 IDT7M812 or64K x 9 (IDT7M912) configuration • Fast access times — Military: 25ns (max.)

27C1100

Abstract: 27c1024-55 27C1024 MX27C1100 ups vh 2000 27C110 27C1024 equivalent MX27C1024QC-55
Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin out • 128K x 8 or 64K x 16 organization(MX27C1100, ROM • • • • • Operating current: 40mA • Standby current: 100uA • Package type:

27c1024

Abstract: 27C1024 equivalent EPROM sop 40 EPROM 40PIN 27C1100 MX27C1100
Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small

saa 1291

Abstract: CY7C008 CY7C009 CY7C018 CY7C019 IDT7008
Contextual Info: iJë- CY7C008/009 CY7C018/019 : CYPRESS PRELIMINARY 64K/128K x 8/9 Dual-Port Static RAM Features True Dual-Ported memory cells which allow sim ulta­ neous access of the same memory location 64K x 8 organization CY7C008 128K x 8 organization (CY7C009) 64K x 9 organization (CY7C018)

MX27C1100

Contextual Info: Introduction Selection Guide MX27C1100/27C1024 1M-BIT 128K x 8/64K x 16 CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin out) • 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns

Contextual Info: Í D P M 7Dense-Pac Microsystems. Inc. 0 DPS1025 64K X 16 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESCRIPTIO N : The DPS1025 is a 64K X 8 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors

x27c

Contextual Info: B k J B := . • E S ■ W f c r s i Wè ê ë ê MX27C1 100/27C1 024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • • Operating current: 40mA 64K x 16 organization MX27C1024, JEDEC pin out • Standby current: 100uA • 128K x 8 or 64K x 16 organization(M X27C1100,

Contextual Info: £ n D M 7 DPZ64X32V Dense-Pac Microsystems, Inc. 0 _ 64K X 32 FLASH Memory VERSAPAC PRELIMINARY DESCRIPTION: The D P Z 64 X 3 2V is a 64K x 32 FLASH electrically erasable and programmable read only memory module built with four 64K x 8 FLASH m emory devices. The module is a 66-pin PGA

Contextual Info: DPS1037 Dense-Pac Microsystems, Inc. 64K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1037 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a co-fired ceramic substrate having

Contextual Info: DPS8644 □PM Dense-Pac Microsystems, Inc. 64K X 4 CMOS SRAM MODULE O NOT RECOMMENDED FOR NEW DESIGNS D ESCR IPTIO N : The DPS8644 is a 64K X 4 high-speed, low-power static RAM module comprised of four 64K X 1 monolithic SRAM 's, and decoupling capacitors

Contextual Info: DPS64X16P □ Dense-Pac Microsystems, Inc. 0_ 64K X 16 CMOS CM SRAM MODULE PRELIMINARY DESCRIPTION: The DPS64X16P is a 64K X 16 high-speed, low-power static RAM module comprised of four 64K X 4 monolithic SRAM's, and decoupling capacitors surface mounted on a FR-4 substrate.

DSC-703

Contextual Info: IDT 7MC4018 64K x 6 CMOS STATIC RAM CERAMIC SIP MODULE WITH SEPARATE DATA I/O FEATURES: DESCRIPTION: • High-density 64K x 6 CMOS static RAM module The IDT7MC4018 isa 64K x 6-bit high-speed static RAM module constructed on a co-fired ceram ic substrate using six IDT7187

UG3D6464D7B8

Contextual Info: UG3D6464D7B8 512K Bytes 64K x 64 160 Pin SRAM DIMM based on 64K x 32 Features General Description The UG3D6464D7B8 is a 524,038 bits by 64 Sync Burst SRAM module. The UG3D6464D7B8 is assembled using 2 pcs of 64K x 32 Sync Burst SRAMs in 100-pin QFP packages and

IBM043611ULAB4M

Contextual Info: IBM043611ULAB4M x 1612/10, 3.3VMMDM15DSU-021045023. Preliminary IBM043611ULAB IBM041811ULAB 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 organizations • Registered outputs • 0.45 Micron CMOS technology • Asynchronous Output Enable and Power Down

Contextual Info: ► DPS1026 64K X 16 CMOS SRAM MODULE Dense-Pac Microsystems, Inc. 0 NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS1026 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors surface mounted on a thick film ceramic substrate.

Contextual Info: IDT 7MP456 256K 64K x 4-BIT C M O S STATIC RAM PLASTIC SIP M ODULE FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM m odule constructed on an epoxy laminate surface using four

Contextual Info: DPS384 □PM Dense-Pac Microsystems, Inc. 64K X 6 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESC R IPT IO N : The DPS384 is a 64K X 6 high-speed, low-power static RA M module comprised of six 64K X 1 m onolithic SR A M 's, and decoupling capacitors

Contextual Info: □PM DPS8645 Dense-Pac Microsystems, Inc. 64K X 4 CMOS SRAM MODULE O NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS8645 is a 64K X 4 high-speed, low-power static RAM module comprised of four 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a single inline thick film ceramic

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS ADVANCED 1DT70728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRA Architecture - Eight independent 8K x 16 banks -1 Megabit of memory on chip

Atmel AT24C Truncation Code

Abstract: marking ATML AT24C64D ATMEL marking code AT24C Atmel PART DATE CODE at24c AT24C64D-SSPD-T AT24C32D 24C32-64DAM AT24C32D-XPD-T atml 122
Contextual Info: Atmel AT24C32D and Atmel AT24C64D I2C Automotive Temperature Serial EEPROM 32K 4096 x 8 , 64K (8192 x 8) DATASHEET Features  Standard-voltage operation  VCC = 2.5V to 5.5V  Automotive temperature range –40C to 125C  Internally organized 4096 x 8 (32K), 8192 x 8 (64K)

MX23C1100

Contextual Info: Introduction Selection Guide MX23C1100 1M-BIT 128K x 8/64K x 16 CMOS MASK ROM FEATURES • • • • • • Switchable organization - 128K x 8(byte mode) - 64K x 16(word mode) • Single +5V power supply • Fast access time: 150/200ns Totally static operation

CY14B101NA_ZS45XI

Abstract: CY14B101NA-ZS25XI CY14B101LA-SZ45XI CY14B101LA-SZ25XI
Contextual Info: CY14B101LA, CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small