28SOJ Search Results

Contextual Info: AMIC TECHNOLOGY Taiwan , INC. Spec. No. : 04-83-002 Update : 12/17/1999 Pages : 1 of 9 TAPE&REEL PACKING SPECIFICAITON 1. Packing Procedures 2. Carrier Tape Dimensions - 28SOP,26/28SOJ,28TSOP,32sTSOP 3. Carrier Tape Dimensions - 32/40/44SOP,32/40SOJ,32/44/50TSOP,100QFP

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

01-I04

Abstract: KM641001A KM641001A-15 KM641001A-20
Contextual Info: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words

Contextual Info: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)

KM611001J

Abstract: KM611001 KM611001-20 KM611001-25 KM611001-35
Contextual Info: KM611001 CMOS SRAM 1M x lB it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35 ns Max. The KM611001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 1.048,576 words by 1 bits. • Low Power Dissipation

KM68257C

Abstract: KM68257C-12 KM68257C-15 KM68257C-20 KM68257CJ
Contextual Info: CMOS SRAM KM68257C 32,768 WORD x 8 B it High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : K M68257C-12 : 165mA (max.) K M 68 257 C -15: 150mA (max.)

K6E0808C1C

Abstract: K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C
Contextual Info: PRELIMINARY K6E0808C1C-C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.

Contextual Info: PRELIMINARY CMOS SRAM K6E0808V1C-C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.

Contextual Info: K6E0804C1E-C CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998 Final Draft Data

Contextual Info: KM641001A CMOS SRAM 256K x 4 Bit With ÜE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation

KM641001

Contextual Info: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words

Contextual Info: KM64258C CMOS SRAM 64Kx4 Bit With OE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12, 15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 : 150 mA (Max.) KM64258C-15 :140 mA (Max.)

KM6865BP-20

Abstract: KM6865BP-15
Contextual Info: KM6865B CMOS SRAM 8 K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12 ,15, 20,25ns Max. The KM865B is a 65,536-bit high-speed Static Random • Low Power D issipation Access Memory organized as 8,192 words by 8 bits.

Contextual Info: PRELIMINARY KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time 15,17,20 ns(Max.) The KM641001A is a 1,048,576-bit high-speed Static • Low Power Dissipation Standby (TTL) Random Access Memory organized as 262,144 words

Contextual Info: KM68257C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial re le a s e w ith P re lim in a ry. A pr. 1st, 1994

300b tube

Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Contextual Info: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

Contextual Info: I ABOUT EXAR I PRODUCTS I INDEX I SALES INFORMATION I INFORMATION REQUEST I SEARCH I HELP I DS1/E1 Product Selector Guide DS1/E1 Products Line Interfaces Part Number # of Channels Data Rates Package s Clock Recovery Short/ Long Haul Temp Range Operating Power

Contextual Info: LH521002A CMOS 256K x 4 Static RAM • Low Power Standby when Deselected High frequency design techniques should be em­ ployed to obtain the best performance from this device. Solid, low impedance power and ground planes, with high frequency decoupling capacitors, are desirable. Series

Contextual Info: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial D raft Draft Data A ug. 1 .1 9 9 8 Remark

Contextual Info: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial Draft Draft Data Aug. 1 .1 9 9 8 Remark

Contextual Info: KM68V257E/EL, KM68V257EI/ELI CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Aug. 1. 1998 Preliminary Rev. 1.0

BNK-17

Contextual Info: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L