LH521002A Search Results
LH521002A Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| LH521002AK-17 | Sharp | SRAM GP Single Port | Original | 77.56KB | 8 | ||
| LH521002AK-20 | Sharp | SRAM GP Single Port | Original | 77.56KB | 8 | ||
| LH521002AK-25 | Sharp | SRAM GP Single Port | Original | 77.56KB | 8 |
LH521002A Price and Stock
Sharp Microelectronics of the Americas LH521002AK-20IC,SRAM,256KX4,CMOS,SOJ,28PIN,PLASTIC |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
LH521002AK-20 | 7,613 |
|
Buy Now | |||||||
Sharp Microelectronics of the Americas LH521002AK-25256K X 4 STANDARD SRAM, 25 ns, PDSO28 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
LH521002AK-25 | 1,648 |
|
Buy Now | |||||||
LH521002A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: LH521002A CMOS 256K x 4 Static RAM • Low Power Standby when Deselected High frequency design techniques should be em ployed to obtain the best performance from this device. Solid, low impedance power and ground planes, with high frequency decoupling capacitors, are desirable. Series |
OCR Scan |
lh521002a28-pin400-mil28soj+2 | |
LH521002AK25Contextual Info: LH521002A CMOS 256K x 4 Static RAM • Low Power Standby when Deselected High frequency design techniques should be employed to obtain the best performance from this device. Solid, low impedance power and ground planes, with high frequency decoupling capacitors, are desirable. Series |
Original |
lh521002a28sojsoj28-p-40028soj400+3 | |
lh57257
Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
|
OCR Scan |
ir2e201ir2e24ir2e27/air2e28+15 | |
|
Contextual Info: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A |
OCR Scan |
lh5116lh5116hlh5116slh5164a+6 | |
BNK-17Contextual Info: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85 |
OCR Scan |
lh5116/na/d-10lh5116h/hn/hd-10lh5116sn24sop+7 | |
LQ070T5BG01
Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
|
OCR Scan |
109-ngl1pr112gl1pr135gl1pr136+16 | |
lh5168Contextual Info: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full |
OCR Scan |
lh5116lh51116hlh5116slh5168+6 | |
5268A
Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN
|
OCR Scan |
5116/na/d-10lh5116h/hn/hd-10lh5116snlh5164a/an-80l+10 | |
LH521007AK-20Contextual Info: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment. |
OCR Scan |
lh5116snlh5164avn/avtlh5164av3hn24sop+6 | |
LHS168
Abstract: LH52252A LH52252
|
OCR Scan |
lh5116lh5116hlh5116slh5117+8 | |
IR2E27A
Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
|
OCR Scan |
core28ir2c24a/anir2c26ir2c30/n+16 | |
IR2E01
Abstract: LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901
|
OCR Scan |
ir3y21lh1532lh1536lh1548+16 | |
100 10L AD
Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20
|
OCR Scan |
lh5116/na/d-10100lqfph/ahn/ahd/aht-10llh5164avn/avt+12 |