IS61LV3216 Search Results

Contextual Info: IS61LV3216L ISSI 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 130 mW typical operating — 150 fiW (typical) standby • TTL compatible interface levels • Single 3.3V + 10%, -5% power supply for 10

IS61LV3216L

Abstract: uA78
Contextual Info: ISSI IS61LV3216L 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 130 mW typical operating — 150 µW (typical) standby • TTL compatible interface levels • Single 3.3V + 10%, –5% power supply for 10

Contextual Info: ISSI IS61LV3216 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 10, 12, 15, and 20 ns The • CMOS low power operation ISSl ADV^ . ^ F°R^ T'0N IS 6 1 L V 3 2 1 6 is a h ig h -s p e e d , 5 1 2 K s ta tic R A M o rg a n iz e d a s 3 2 ,7 6 8 w o rd s b y 16 bits. It is fa b ric a te d u s in g

LV321

Abstract: IS61LV3216L IS61LV3216L12T
Contextual Info: ISSI IS61LV3216L 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 130 mW typical operating — 150 jjA/V (typical) standby • TTL compatible interface levels • Single 3.3V ± 10% power supply

IS61LV3216L

Contextual Info: ISSI IS61LV3216L ISSI IS61LV3216L 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 130 mW typical operating — 150 µW (typical) standby • TTL compatible interface levels

tsd 1196

Abstract: IS61LV3216
Contextual Info: ISSI IS61LV3216 ISSI IS61LV3216 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 12, 15, and 17 ns • CMOS low power operation — 150 mW typical operating — 150 µW (typical) standby • TTL compatible interface levels • Single 2.7V to 3.6V power supply

Contextual Info: ISSI IS61LV3216L 32K x 16 LOW VOLTAGE CMOS STATIC RAM a d v a n c e i n f o r m a t io n FEATURES DESCRIPTION • The IS S IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using IS S I's high-performance CMOS technology. This highly reli­

Contextual Info: ISSI IS61LV3216 32K x 16 LO W V O L T A G E C M O S S T A T IC FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 150 mW typical operating — 150 fiW (typical) standby • TTL compatible interface levels • Single 3.3V ± 10% power supply

Contextual Info: IS61LV3216 ISSI 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES ADVA^ ' ^ F° ÎTI0N DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 150 mW typical operating — 150 fiW (typical) standby • TTL compatible interface levels

IS61LV3216

Abstract: SR036-1A
Contextual Info: ISSI IS61LV3216 ISSI IS61LV3216 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 150 mW typical operating — 150 µW (typical) standby • TTL compatible interface levels • Single 3.3V ± 10% power supply

IS61LV3216

Contextual Info: IS61LV3216 ISSI 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 150 mW typical operating — 150 jjA/V (typical) standby • TTL compatible interface levels • Single 3 .3 V ± 10% power supply

IS61C256AH

Contextual Info: Org. 8K x 8 32K x 8 32K x 16 64K x 8 64K x 16 64K x 24 128K x 8 128K x 16 Part No. IS61C64AH IS61C64B IS61C256AH IS61LV256 1 IS62C256 IS62LV256(1) IS62LV256L(1) IS61C3216 IS61LV3216(1) IS61LV3216L(1) IS61C512 IS61C6416 IS61LV6416(1) IS61LV6424(1) IS61C1024

uA78

Contextual Info: IS61LV3216L 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 130 mW typical operating — 150 µW (typical) standby • TTL compatible interface levels • Single 3.3V + 10%, –5% power supply for 10

Contextual Info: IS61LV3216L 32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 130 mW typical operating — 150 A D V A N C E IN FO R M A TIO N O C T O B E R 1997 \i\N (typical) standby

IS61LV3216L

Contextual Info: ISSI IS61LV3216L ISSI IS61LV3216L 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 130 mW typical operating — 150 µW (typical) standby • TTL compatible interface levels

Contextual Info: IS61LV3216 IS61LV3216 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 150 mW typical operating — 150 µW (typical) standby • TTL compatible interface levels • Single 3.3V ± 10% power supply

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

1H08S

Abstract: PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR
Contextual Info: Supervisors Cross Reference Guide Alliance Maxim/Dallas IMP ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA DS1232LP IMP1232LPEMA ASM1232LPN DS1232LP IMP1232LPN Analog Devices Micrel Microchip MIC1232N TC1232CPA - - - - - -

IS61SP25636

Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Contextual Info: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

M5M418165

Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Contextual Info: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

1K x 8 static ram

Abstract: Static RAM 64K x 8 BIT DYNAMIC RAM 32K 4K x 8 Synchronous Dynamic RAM static ram 64K IS25M080A EEPROM 16k, 32k, 64k, 128k, 256k, 512k, 1m, 2m, 4 rom 1K x 8 2Mbit EPROM flash memory 5V
Contextual Info: www.issi.com IS22C011 IS22C012 IS22C020 IS22C040 IS22C111 IS23SC1604 IS23SC4418 IS23SC4428 IS24C01 IS24C01-3 IS24C02 IS24C02-3 IS24C04 IS24C04-3 IS24C16 IS24C16-3 IS24C64 IS24C64-3 IS25F011A-3V IS25F011A-5V IS25F021A-3V IS25F021A-5V IS25F041A-3V IS25F041A-5V

roadmap ISSI

Abstract: IS61C1024 IS61C64AH IS61C64B IS62C64 IS89C52 IS25M080A5T2R IS80C32 flash memory 5v 16M-bit 48 TSOP ISSI
Contextual Info: Memory Based Solutions ISSI Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI_498 04/09/98 ® Integrated Silicon Solution, Inc. Memory Based Solutions ISSI Milestones • • • • • • • Incorporated - 1988 First Foundry Partnership TSMC - 1990