8KX8 Search Results

Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

Contextual Info: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

X76F641

Contextual Info: ISO 7816 Compatible X76F641 64K 8Kx8+32x8 Secure SerialFlash FEATURES DESCRIPTION • 64-bit Password Security —Five 64-bit Passwords for Read, Program and Reset • 8192 Byte+32 Byte Password Protected Arrays —Seperate Read Passwords —Seperate Write Passwords

C2665

Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Contextual Info: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)

Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

1202z

Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
Contextual Info: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

TC5564

Abstract: 8KX8-01 srm2064 8KX8-03
Contextual Info: Iksi i CMOS 8KX8-01 CMOS 8KX8-03 ^ n a •■ 64K CMOS STATIC RAM g -J 02 VVORD X 8 BIT In tegrated C irc u its In co rp o ra te d 10301 W i I lo w s R o a d m R edm ond, WA 98052 206 882-3100 TW X 910-443-2302 - f c . - FEATURES: □ □ □ □ □ □

Contextual Info: Tekmos TK89C668 Microcontroller DS015 V1.3 January 30, 2013 Product Overview Features 64K Flash, 8K RAM, TWI General Description The TK89C668 is based on the 8051microcontroller architecture. With 64Kx8 of Flash memory and 8Kx8 of internal RAM, these parts are

Contextual Info: h bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: 3 bE D BENCHMARK MICROELEC fe j BENCHM ARQ _ _ • 1 3 ?f lû n 0 0 Q D 2 0 Q =1 ■ Advance Information bq3485 Real-Time Clock RTC With 8Kx8 RAM O Features General Description >■ Direct clock/calendar replacement for IBM AT-compatible computers and

bq4010

Abstract: bq4010Y bq4010YMA-85N
Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

Contextual Info: pt// 8KX8 BASED Dense-Pac Microsystems, Inc. CMOS SRAM FAMILY DESCRIPTION: The Dense-Pac 8 K X 8 Based Family of Static Random Access M em ories SRAM , com plete w ith memory interface logic and on-board capacitors are available in the organizations and packages described below.

Contextual Info: 3bE BENCHMARK MICROELEC D • 13 7001=1 Advance Information BENCHMARQ D0G 02 D2 2 BiBEN' bq3487 Real-Time Clock Module With 8Kx8 RAM Features General Description ► Direct clock/calendar replacement for IBM AT-compatible computers and other applications

Contextual Info: U631 H64 Software Controlled 8Kx8 nvSRAM □ Packages: P D IP 28 300 mil S O P28 (330 mil) Features □ H igh-perform ance C M O S non­ volatile static RAM 8192 x 8 bits □ 25, 35 and 45 ns Access Tim es □ 12, 20 and 25 ns O utput Enable A ccess T im es

VCC3 1156 01

Abstract: VCC3 1156
Contextual Info: » I T T I O L O » _ S S S S S S GSM31P512KB-I66 256KB/512KB Modules s— Features Functional Description cont’d • • • • The GSM31P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single 5V 8Kx8 SRAM for the tag. The GSM14P512K-I66, a

Contextual Info: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

Contextual Info: II High-Performance SKxS CMOS SRAM AS7CJ64 AS7CÎ64L 8Kx8 CMOS SRAM Common I/O FEATURES • Organization: 8,192 words x 8 bits Equal access and cycle times • High speed Very fast 3 ns output enable access time - 10/12/15/20/25 ns address access time Easy memory expansion with CE1, CE2, OE inputs

A7 SMD TRANSISTOR

Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
Contextual Info: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is

Contextual Info: 86 CY7C186 8Kx8 Static RAM Features provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80%

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 8Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

EEPROM

Abstract: 24LC65 24LC65-P 8Kx8 EEPROM
Contextual Info: 970922 01 ELFA artikelnr. 73-656-38 24LC65/P 8kx8 EEPROM SIDA: 1/11 73-656-46 24LC65/SM 8kx8 EEPROM 970922 01 SIDA: 2/11 970922 01 SIDA: 3/11 970922 01 SIDA: 4/11 970922 01 SIDA: 5/11 970922 01 SIDA: 6/11 970922 01 SIDA: 7/11 970922 01 SIDA: 8/11 970922 01

25C64li

Abstract: 25C64VI marking code VV transistors 25C64 AEC-Q100 AN10 CAT25640 CAT25C64 25C64V
Contextual Info: Not recommended for new designs, replace with CAT25640 CAT25C64 64K-Bit SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C64 is a 64K-Bit SPI Serial CMOS EEPROM internally organized as 8Kx8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power

25640 AN

Abstract: 25640 AEC-Q100 CAT25640 MO-229 MS-001
Contextual Info: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is