SOJ44 Search Results

44P0K

Abstract: PRSJ0044DA-A
Contextual Info: JEITA Package Code P-SOJ44-10.16x28.47-1.27 RENESAS Code PRSJ0044DA-A *1 Previous Code 44P0K MASS[Typ.] 1.7g c D HE *2 E e1 23 44 1 22 Index mark L b2 Reference Symbol A1 A *3 e y NOTE 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT

44P0K

Abstract: soj44 SOJ44-P-400-1
Contextual Info: e y b 22 b1 Lead Material Alloy 42 1 Weight g 23 D JEDEC Code – 44 EIAJ Package Code SOJ44-P-400-1.27 L c SEATING PLANE HE 44P0K A E A1 b2 A A1 b b1 c D E e e1 HE L y b2 I1 I2 Symbol Mar.’98 Dimension in Millimeters Min Nom Max 3.55 3.35 3.45 0.8 –

44P0K

Abstract: SOJ44-P-400-1 ED44
Contextual Info: 44P0K Plastic 44pin 400mil SOJ EIAJ Package Code SOJ44-P-400-1.27 Weight g JEDEC Code – Lead Material Alloy 42 b2 I1 I2 e D 44 e1 c 23 e1 HE E Recommended Mount Pad Symbol 1 22 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2 Dimension in Millimeters

260-pin

Contextual Info: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

Contextual Info: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

bft10

Contextual Info: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s

Contextual Info: TO SH IBA TC551664BJ/BFT-12,-15 TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it

Contextual Info: TO SHIBA TC55V1664J-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed

Contextual Info: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55V1864 J /FT -15 DATA SILICON GATE CMOS 65,536-WORD BY 18-BIT CMOS STATIC RAM DESCRIPTION The TC55V1864J/FT is a 1,179,648-bit high-speed static random access memory SRAM organized as 65,536

TC551664J

Contextual Info: TOSHIBA TC551664J-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664J is a 1.048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

Contextual Info: TOSHIBA TC55V1664BJ/BFT-1Q,-12 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 65,536-W ORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as

TC55V16256J

Contextual Info: TOSHIBA TC55V16256J/FT-12,-15 TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 262,144-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

IJ09

Abstract: SOJ44-P-400-1 A120T1
Contextual Info: TO SH IBA TEN TATIVE TC55V1664BJI/BFTI-10,-12 TO SHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJI/BFTI is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s

H9723

Abstract: h9740 l9718 L9712 L9709 L9727 T9934 l9731 L9706 l9735
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 1998 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 1998 TABLE OF CONTENTS Section I: Introduction Section II:

2sa648 transistor

Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

D634 transistor

Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

tc551664aj-12

Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
Contextual Info: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it

SOJ44-P-400-1

Contextual Info: TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it

SOJ44-P-400-1

Abstract: TC55V16256FTI TC55V16256JI
Contextual Info: TO SH IBA T C 5 5 V 16256J l/FTI-12#- 1 5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

TC55V16256J

Contextual Info: TO SHIBA TC55V16256J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

CXK5B16120J

Abstract: SOJ-44P-01
Contextual Info: CXK5B16120J/TM -12 65536-word x 16-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B16120J/TM is a high speed 1M bit BiCMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this

64Kx8 CMOS RAM

Abstract: static ram 64kx8 SOJ28 SOJ-28 W241024AJ-15 TSOP44 Package soj44 SOJ32 W241024
Contextual Info: H I G H S P E E D C M O S S TAT I C R A M W24 AND W26 SERIES • 256K TO 1M HIGH SPEED STATIC RAM’S WITH ACCESS TIMES AS LOW AS 12ns HIGH SPEED CMOS STATIC RAM SPECIFICATIONS Part Number W24257AJ-12 W24257AQ-12 W24512AJ-15 W24512AT-15 W26010AJ-15 W26010AT-15

Contextual Info: Surface Mount SOJ Sockets ADVANCED INTERCONNECTIONS 5 Energy Way, P.0. Box 1019, West Warwick, Rl 02893 USA Tel. 800-424-9850 / 401-823-5200 •Fax 401-823-8723 • Email advintcorp@aol.com • Internet http://www.advintcorp.com Surface Mount SOJ Sockets .050/ 1.27 Typ.

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178