TC55V1 Search Results

260-pin

Contextual Info: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

Contextual Info: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

Contextual Info: TOSHIBA TC55V1403J/FT-15.-20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 1-BIT/1,048,576-WORD BY 4-BIT C M O S STATIC R A M DESCRIPTION The TC55V1403J/FT is a 4,194,304-bit high speed static random access memory SRAM , it is possible to

bft10

Contextual Info: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s

TC55V16176FF

Abstract: TC55V16176FF-167
Contextual Info: TOSHIBA TC55V16176FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16176FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM

TC55V16366FF-167

Contextual Info: TOSHIBA TC55V16366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16366FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM

TC55V16100FT-10

Abstract: TC55V16100FT-12 TC55V16100FT-15
Contextual Info: T O S H IB A TC55V16100FT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16100FT is a 16,777,216-bit high-speed static random access memory SRAM organized as 1,048,576 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide

Contextual Info: TO SHIBA TC55V1664J-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed

Contextual Info: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55V1864 J /FT -15 DATA SILICON GATE CMOS 65,536-WORD BY 18-BIT CMOS STATIC RAM DESCRIPTION The TC55V1864J/FT is a 1,179,648-bit high-speed static random access memory SRAM organized as 65,536

Contextual Info: TOSHIBA TC55V1664BJ/BFT-1Q,-12 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 65,536-W ORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as

Contextual Info: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a

TC55V16256J

Contextual Info: TOSHIBA TC55V16256J/FT-12,-15 TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 262,144-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

IJ09

Abstract: SOJ44-P-400-1 A120T1
Contextual Info: TO SH IBA TEN TATIVE TC55V1664BJI/BFTI-10,-12 TO SHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJI/BFTI is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s

Contextual Info: TOSHIBA TC55V16366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16366FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM

GS8160Z18BT-150

Abstract: TC55V16186FF-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 TC55V16256FT-25
Contextual Info: TOSHIBA For Toshiba: Add "I" after package designator for Industrial Temp. For example: the TC55VD818FF-133 becomes the TC55VD818FFI-133 for industrial temp. For GSI: Add "I" at the end of part number for Industrial Temp. TC55V16176FF-150 TC55V16176FF-167

SOJ44-P-400-1

Contextual Info: TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it

TC55V1664FT-12

Abstract: TC55V1664FT-13 TC55V1664FT-15
Contextual Info: TOSHIBA TC55V1664FT-12,-13,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664FT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed

SOJ44-P-400-1

Abstract: TC55V16256FTI TC55V16256JI
Contextual Info: TO SH IBA T C 5 5 V 16256J l/FTI-12#- 1 5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

TC55V16256J

Contextual Info: TO SHIBA TC55V16256J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

TC55V1326AFF

Abstract: TC55V1326AFF-66 TC55V1326
Contextual Info: TOSHIBA TC55V1326AFF-66 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1326AFF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM

Contextual Info: TO SH IBA TC 55V1001 AF/AFT/ATR/AST/ASR-70,-70 L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC RD BY 8-B IT STATIC RAM DESCRIPTION The TC55V1001 AF/AFT/ATR/AST/ASR is a 1,048,576-bit static random access memory SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device

Contextual Info: TOSHIBA TC55V16356FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16356FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM

SOJ44-P-400-1

Abstract: TC55V1664BFT
Contextual Info: TOSHIBA TC55V1664BJ/BFT-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s

I03c

Abstract: SOJ44-P-400-1 TC55V1664BFT
Contextual Info: TOSHIBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s