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Toshiba America Electronic Components


Toshiba America Electronic Components TC55V1001ASTI-70L SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 70ns 32-Pin TSOP-I
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TC55V1001ASTI-70L		619			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC55V1001AFT85 SRAM Chip Async Single 3.3V 1M-bit 128K x 8 85ns 32-Pin TSOP-I
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TC55V1001AFT85		343			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC55V1001ST-85 SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 85ns 32-Pin TSOP-I
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TC55V1001ST-85		96		1	1 $0.61 10 $0.61 100 $0.31 1000 $0.31 10000 $0.31	Buy Now
Toshiba America Electronic Components TC55V1001AFTI-10 SRAM Chip Async Single 3.3V 1M-bit 128K x 8 100ns 32-Pin TSOP-I
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TC55V1001AFTI-10		78			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC55V1001FI-85 SRAM Chip Async Single 3.3V 1M-bit 128K x 8 85ns 32-Pin TSOP-I
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TC55V1001FI-85		60			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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55V1001 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TO SH IBA TC 55V1001 AF/AFT/ATR/AST/ASR-70,-70 L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC RD BY 8-B IT STATIC RAM DESCRIPTION The 55V1001 AF/AFT/ATR/AST/ASR is a 1,048,576-bit static random access memory SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device	OCR Scan	072-wc 55v1001 af/aft/atr/ast/asr-70 tc55v1001 +5576-bit s-td-79e 1001af/aft/at r-70f-70 32-p-0820-0	PDF
ATPA Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C	Original	cy2147-35c cy7c147-35c cy7c147-45c cy91l22-35c +14cy7c122-35c cy2147-45c cy7c148-35c cy7c148-25c atpa 7130sa100p 24l01 7c263/4-35c 7164s15y cy9122-25 7133sa35j 7142sa55 7130sa55p cy2149-45c	PDF
EPM5128LC Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309 Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C	Original	cy2148-35c cy21l48-35c cy7c168a-35c cy7c168a-25c +155962-8871309xx 5962-89839112x cy7c148-35c cy7c168a-45m cy7c168a-35m epm5128lc idt cypress cross reference clocks epm5064lc-1 epm5128lc-1 epm5064lc epm5128lc-2 epm5128gi epm5128jc-1 8464c 5962-8871309	PDF
EPM5128LC Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C	Original	5962-8753903lx 5962-8863701lx 5962-8867003lx 5962-8867809rx +155962-8867809xx 5962-8867810rx 5962-8867811rx 5962-8867812rx 5962-8871309rx 5962-8871310rx epm5128lc epm5128gc epm5064lc-1 epm5128lc1 59628867809r 5962-8984106lx epm5128gi 7c19945dmb epm5130gc-1	PDF
toshiba toggle mode nand Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit	Original	64m128m 66mhz 100mhz 200mhz +15500/600mhz 800mhz 400mhz x16/x18x32 photopc550 toshiba toggle mode nand tc518128 tc518129 tc551001 equivalent 551664 tc518512 sgs-thomson power supply toggle ddr nand flash jeida 38 norm apple a5 chip	PDF