50N120A Search Results

Contextual Info: r IXLN 50N120A IGBT VCES I C25 V CE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability ?c G r 1 c m 1 mi ic u y u c u a È T ' e Maximum Ratings Symbol Test Conditions V CES Tj V CGR T, = 25°C to 150°C; RGE = 1 M ii V GES 1200 V 1200 V Continuous

IXLN50N120A

Contextual Info: OIXYS IGBT IXLN 50N120A v¥ ces ^C25 vv CE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability Preliminary data ° Symbol Test C onditions Maximum Ratings v CES ^ V CGR T,J = 25°C to 150°C; Rrc = 1 M ii Cat V GES 1200 V 1200 V Continuous +20 V

IXLN50N120A

Contextual Info: IGBT IXLN 50N120A VCES IC25 VCE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V Transient

50N120AU1

Abstract: IXDN 50N120AU1 IXDN50N120AU1 V50017
Contextual Info: High Voltage IGBT with Diode IXDN 50N120AU1 C Short Circuit SOA Capability VCES = 1200 V IC25 = 70 A VCE sat typ = 2.5 V G Preliminary Data E E Maximum Ratings miniBLOC, SOT-227 B E153432 Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

jvv diode

Abstract: IXDN 50N120AU1 50N120AU1 IXDN50N120AU1 0504N
Contextual Info: □ IXYS High Voltage IGBT with Diode IXDN 50N120AU1 V CES 1200 V ^C25 70 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 1200 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

IXBH 40N160

Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
Contextual Info: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

40N60A

Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
Contextual Info: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01

b14 smd diode

Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
Contextual Info: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60