44N80 Search Results

IXFX 44N80P

Abstract: 44N80P ixfk44n80p IXFX44N80P 44N80 PLUS247 44n8
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V

44N80

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V

44N80

Abstract: 125OC
Contextual Info: IXFN 44N80 HiPerFETTM Power MOSFETs Single MOSFET Die VDSS ID25 RDS on = 800 V = 44 A = 0.165 Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: Advanced Technical Information IXFN 44N80 HiPerFETTM Power MOSFETs Single MOSFET Die VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

44N80

Abstract: 44N80P "SOT-227 B" dimensions
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous

IXFX 44N80P

Abstract: 44n8 max2743 IXFK44N80P
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 800 800

44N80P

Abstract: ISOPLUS247
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS on Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 200 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs Single MOSFET Die IXFN 44N80 DSS I D25 RDS on 800 V 44 A 0.145 a N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions vt d s s T j =25°C to150°C 800 V Voon T u = 25° C to 150° C i R ^ I M il

44N80

Abstract: 98594
Contextual Info: IXFN 44N80 HiPerFETTM Power MOSFETs Single MOSFET Die VDSS ID25 RDS on = 800 V = 44 A = 0.165 W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: □ IXYS Advanced Technical Information IXFN 44N80 HiPerFET Power MOSFETs Single MOSFET Die V.DSS I D25 R,DS on 800 V 44 A 0.145 Q 9D N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions V DSS Td = 25°C to 150°C

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS on Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 200 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

44n8

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die IXFN 44N80 VDSS ID25 RDS on = 800 V = 44 A = 0.145 W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: 44N80 Power MOSFET HiPerFETTM Single MOSFET Die VDSS ID25 RDS on = 800V = 44A ≤ 0.165Ω Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

52N30

Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70

C1218

Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268