2SK 111 Search Results

BUZ90af

Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Contextual Info: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198

2SK series

Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
Contextual Info: Index N-Channel 2SK Series 2SK213. 153 2SK214. 153

transistor 2sk

Abstract: transistor+2sk
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2313 DATA SILICON N CHANNEL MOS TYPE L2-tt-M O SV (2SK 2313) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

2SK2159

Abstract: 2SK680A 2SJ199 2SJ197 mmtf1n10
Contextual Info: N & P CHANNEL MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 0.5A TO 5A • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V SINGLE N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BST120 BST122 BST80 IRFL014 IRFL110 IRFL2605 IRFL9014 IRLL014 IRLL110

MOSFET TOSHIBA 2SK

Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
Contextual Info: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.

2SK2388

Abstract: 1B10B N3I3
Contextual Info: TOSHIBA Discrete Semiconductors 2SK 2388 Unit in mm Silicon N Channel MOS Type c - MOS IV High Speed, High Current Switching Applications. Chopper Regulator, DC-DC Converter and Motor Drive Applications. • • • • Low Drain-Source ON Resistance: fSs{ON)= 1-8£2(Typ.)

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

12N60FI

Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90

Transistor D 2599

Contextual Info: TO SH IB A 2SK 2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1. Low Drain-Sorce ON Resistance : R d S(ON = 2.9H (Typ.)

Contextual Info: 2SK1579 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Suitable for low voltage operation Outline UPAK OD 1. Gate 2. Drain 3. Source 4. Drain ÓS 2SK 1579 Absolute Maximum Ratings Ta = 25°C unless otherwise specified.

2SJ112

Abstract: 2SJ112-TYPIC j112 fet
Contextual Info: H I T A C H I / í O P T OE LE CT RO NI C S} 73 HITACHI ! .DP IÖLLEC IKUN ICS DE.[LlLllit3SD5 P O D ^ a □ 73C 09948 D • z 3 2S J112 SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 398

D1859

Abstract: NP110N04PUG POWER MOS FET 2sj 2sk MP-25ZJ NP36P06SLG NP52N055SUG np82n055 NP55N04SUG NP55N055SDG NP60N03KUG
Contextual Info: Power MOS FET NP series Ultra-Low On-Resistance Series Suitable for Automotive Electronic Applications The NP Series has been designed to meet the demanding requirements in the field of automotive electronics. The channel temperature rating is 175°C max., which is 25°C higher than that of 2SK/2SJ Series. The NP Series realizes the

2SB 545

Abstract: 030VC60 smd tra 14 SMD T26 1AMM ST0220 Am 170 415
Contextual Info: Basic Ordering and Packing Form Explanation o f P acking L is ts 1. Type No. Example 1 D1ND ^- R everse voltage X 1/10. Example 2 2SK 2663 E IA J No. E IA J C lassification. 2SA , 2SB , 2S C , 2SD T ra n s is to r 2 S J : M osfet Reel width 2. Code No.

8672s

Contextual Info: Power F-MOS FET 2SK867, 2SK867A 2SK 867, 2 S K 8 6 7 A Silicon N-channel Power F-MOS FET P a ck a g e D im ensions • F e a tu re s • • • • Low ON resistan ce R ds on : RDs (on) = 0 .3 il (typ.) High sw itching ra te : tf= 120ns (typ.) No secondary breakdow n

transistor et 454

Abstract: 2sk542 DC-DC H14 F530 T108 T460
Contextual Info: mm & ma SEC M O S M nft& }£:s<r7 M O S Field Effect P o w er Transistor m = f= r l\T X 2SK542 N f t ^ /^ '° 7 - M O S FET x > r i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK 542Ü , FET ^ J fiia /P A C K A G E DIMENSIONS

2SK2510

Abstract: Diode KD 521 a transistor DK qj diode sg 5 ts b 772 p
Contextual Info: h 7 > y X ? MOS Field Effect Transistor 2SK2510 FET iif f l 2SK 2510ßN 3l * * ; M t I ! / t 7 - M O S F E T T ', 7 « o 4y % m > f f l m . x t 0 R ds on 1 = 2 0 m û l ^ : ( @ V gs = 1 0 V , R ds (on) 2 = 3 0 m ( @ V gs = 4 V , Id = 2 0 A ) Id = 2 0 A )

transistor jsx

Abstract: 2SK681 ipw fet s0822 t460 transistor
Contextual Info: ^ £ — 5 7 . 5 / — h M O S W * im . R $ b $ k '< t7 - Y :7 > ï ï * 9 M O S Field Effect Power Transistor 2SK681 MOS F E T 2SK 681Ü , N f - - v ^ . ; H i^ > 'f I7 - M 0 S t i i z «t i m ^c7 K 7 # x a 7 f > / FETT, f v q x ¥ i i : mm) 5 V'ffiiH*IC<7)

2SK735

Abstract: 26-JS transistor BJ 932 3e tRANSISTOR la 5531 JMT460 T108 transistor st 932 LF POWER FET TRANSISTOR EH FET TC-6272
Contextual Info: - f — S 7 • S '— h M O S Field E ffe c t P o w e r T ran sis to r 2SK735 N ^-•Y^JW<r7— M O S F E T m It f f l 2SK 735 i, t-tt-> œ rÆ > * 'iiS < , x ^ . y f > ^ > / < - ? h ï ^ ' !7 14^ 'is - iiT & u , KMM M O S F E T ¡e u s ( T O : mm * 4

TRANSISTOR BH RW

Abstract: k1272 fbii 2SK1272 s45l
Contextual Info: • 5 /— h Field E ffe ct P o w e r T ra n sisto r 2SK 1272 ✓<l7 — M O S N 1 - ^ ^ V mJ m O S 2SK1272ÌÌ, FETT", 5 V « ì H S J C Æ tS i^ tlj^ 'n T H b Î c x 7 f > 7 • * < , -? , « Œ y i / Z j F, 4 IE » ? FET ¿> « H I W iim m ) X T 't .

2sk1150

Abstract: b 772 my1 PS7K 2SK 1411 t8506
Contextual Info: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .

Mosfet T460

Abstract: T460 mosfet LI 803-2 NEC IEI-620 2SK2413 b4sb C947
Contextual Info: _L * IK I • M O S B Â l^ e jÆ M O S N E C ^ M O S F ie ld E f fe c t T r a n s is t o r 2 N 51* FET S K 2 4 1 3 ^ ;U /N ° 7 - M O S F E T ^ 'y Æ l i f f l m m miiL : mm; 2SK 2413(âN ^ + ^ ;U iÉ M /\°7 -M O S F E T T ', fêfêjFflft T * U, ^-fST7

TC-799

Abstract: NEC 2sk2134 nec 2134 2sk2134
Contextual Info: i A I A di il. t ! MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 4 , 2 S K 2 1 3 4 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications.

2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Contextual Info: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13

Contextual Info: 2SK1815 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - • Features • • • • • TTT r -111 o h n l t o I Outline Drawings High current Low no-resistance No secondary breakdown Low driving power High forward Transconductance