10N10E Search Results

10N10E Price and Stock

Filter by Manufacturer

Select Manufacturer


Pizzato Elettrica Srl ST DD210N10-E1T ST D SERIES RFID SAFETY SENSOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	ST DD210N10-E1T	Bulk		8 Weeks	1	1 $317.42 10 $288.84 100 $288.84 1000 $288.84 10000 $288.84	Get Quote
Pizzato Elettrica Srl ST DD310N10-E0T ST D SERIES RFID SAFETY SENSOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	ST DD310N10-E0T	Bulk		8 Weeks	1	1 $353.39 10 $325.11 100 $325.11 1000 $325.11 10000 $325.11	Get Quote
Pizzato Elettrica Srl ST DL210N10-E1T ST D SERIES RFID SAFETY SENSOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	ST DL210N10-E1T	Bulk		8 Weeks	1	1 $317.42 10 $288.84 100 $288.84 1000 $288.84 10000 $288.84	Get Quote
Pizzato Elettrica Srl ST DD310N10-E1T ST D SERIES RFID SAFETY SENSOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	ST DD310N10-E1T	Bulk		8 Weeks	1	1 $329.14 10 $299.51 100 $299.51 1000 $299.51 10000 $299.51	Get Quote
onsemi MTP10N10E Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB Rail
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP10N10E		3,750			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 10N10E price and stock on Findchips.com

10N10E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10N10E Abstract: 10N10EL TD10N10EL Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet M 10N10EL TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TMOS POWER FET 10 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate	OCR Scan	10n10el 10n10e td10n10el	PDF
10N10EL Abstract: 10EL fet 10n 10el 10N10E Contextual Info: 10N10EL TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.	Original	mtd10n10el mtd10n10el/d 10n10el 10el fet +210n 10el 10n10e	PDF
10n10el Abstract: 10N10E AN569 MTD10N10EL MTD10N10ELT4 10n 10el dpak 369C Contextual Info: 10N10EL TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.	Original	mtd10n10el mtd10n10el/d 10n10el 10n10e +4an569 mtd10n10elt4 10n 10el dpak 369c	PDF
10n10el Abstract: 10N10 AN569 MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G dpak 369C Contextual Info: 10N10EL TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient	Original	mtd10n10el mtd10n10el/d 10n10el 10n10 +4an569 mtd10n10elt4 mtd10n10elt4g dpak 369c	PDF
BUZ90af Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l Contextual Info: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198	Original	o-251aa o-247ac o-220ab powerso-20 +10buz90af hv82 mgf4919g-01 mgf4919g mgf2407a-01 buz80af1 6n60 mgf1302-15 ssp 50n06 2n10l	PDF