2SD98 Search Results

transistor NEC D 986

Abstract: NEC D 986 DG 7-119 sk 1061 2SD98 2SD985 986l NEC D 986l Ti 181 E5SA
Contextual Info: NEC m * T ' > * Z \ > y < r7 — h Silicon P o w e r Tran sisto rs i v f x à _ 2SD985,986 N P N X . h T 9 * ' > 7 7 1 ^ '> » J ^ I i f f l > V = 7 NPN Silicon Epitaxial Darington Transistor Low Frequency Power Amplifier, Low Speed Switching Industrial Use

Contextual Info: 2SD985M Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k h(FE) Max. Current gain.5.0k

2sd986

Abstract: 2SB794 2SB795 2SD985
Contextual Info: JMnic Product Specification 2SB794 2SB795 Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SD985 2SD986 APPLICATIONS ・For use in operating from IC without

2SD987

Contextual Info: 2S D 98 7 2SD987 NPN=Mi£1ifc7fc'> U =i > h * ' - V > b >&M ? NPN Silicon T riple Diffused D arlington T ra n sisto r High V oltage Low Speed S w itching Industrial Use K H E t l J t * -f -y *• > Vm X « ffl 2 S D 9 8 7 ¡ i i f t i S S x -i ^ 3 K /P A C K A G E DIMENSIONS

2SD982

Abstract: UL 005
Contextual Info: 2SD982 TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH ¡3 TRANSISTO R UBT IN DU STRIAL USE POWER SU PPLY • : Outline Drawings i Features • Ultra high/? • hfi T>x ) —T 'D x - f A '" ^ • A S O * ''/ a I ' • r a if iS t i E x cellen t linearity in h FE E x ce lle n t safe o p e ra tin g area

2SD986

Abstract: 2SD985 2SB795 2SB794 Nec 2sd986
Contextual Info: NPN SILICON DARLINGTON POWER TRANSISTORS 2SD985.2SD986 DESCRIPTION 2SD985, 2SD986 are darlington transistors built-in dumper PACKAGE DIMENSIONS diodes at E-C. They are suitable fo r use to operate from 1C w ith o u t predriver, in millimeters inches 8.5 MAX.

2SD981

Abstract: TV power transistor 700 v power transistor
Contextual Info: 2SD981 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR ＮＰＮ三重拡散プレーナ形 ウルトラハイベータ ウルトラハイベータ (UBT 外形寸法 : Outline Drawings 外形寸法: TO-3 特長 ：Features 特長：

Contextual Info: 2SD982 IVIPN = lEiEi£*7V—^-tm ^ U B T TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH J3tra n sisto r - te x * INDUSTRIAL USE PO W ER SU PPLY • : Outline Drawings ■fèda : Features • Ultra high/? • b ^ O ) 1) — Excel l ent linearity in hFE • A S O * ''/ a I '

2sd986

Abstract: 2SD985
Contextual Info: SavantIC Semiconductor Product Specification 2SD985 2SD986 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB794/795 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage · APPLICATIONS ·For low frequency power amplifier

2SD986

Abstract: 2SB794 2SB795 2SD985
Contextual Info: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB794 2SB795 DESCRIPTION ・With TO-126 package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SD985 2SD986 APPLICATIONS ・For use in operating from IC without

2SD982

Contextual Info: 2SD982 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR INDUSTRIAL USE POWER SUPPLY Outline Drawings Features TO-220AB Ultra high β Excellent linearity in hFE Excellent safe operating area High reliability Applications Color & B/W TV power supply

2SD986

Abstract: 2SD985
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SB794/795 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier

2SD983

Abstract: TV power transistor 700 v power transistor
Contextual Info: 2SD983 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE ＮＰＮ三重拡散プレーナ形 ハイパワーダーリントン HIGH POWER DARLINGTON INDUSTRIAL USE POWER SUPPLY 一般工業電源用 外形寸法 : Outline Drawings 外形寸法: TO-220AB

2SB794

Abstract: 2SB795 2SD986 2SD985
Contextual Info: SavantIC Semiconductor Product Specification 2SB794 2SB795 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD985 2SD986 APPLICATIONS ·For use in operating from IC without

2SD982

Abstract: t930 T151 T810
Contextual Info: 2SD982 IVIPN = lEiEi£*7V—^-tm ^ U B T TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH J3tra n s is to r - te x * INDUSTRIAL USE PO W ER SU PPLY • : Outline Drawings ■fèda : Features • Ultra high/? • b ^ O ) 1) — Excel l ent linearity in hFE • A S O * ''/ a I '

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sb405

Abstract: 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD11 25 15 300 150 85 2SD12 75 4 2.5A 60W(Tc=25ºC) 150 2SD13 35 4 10A 100W(Tc=25ºC) 150 2SD14 75 4 10A 100W(Tc=25ºC) 150 2SD15 60 6 6A 80W(Tc=25ºC) 150 2SD16 100

2sc2460b

Abstract: 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 2SC1815
Contextual Info: - m s T y p e No. € tt M anuf. i f v ît y i f y *r y 2 SC 2307 y - y 'r y 2SC 2308— 2SC 2309 -*- ED CD l=h 14 2SC 2305 2SC 2306«. 2SC 2310 • 2SC 2311 'Mitrii 2SC 2313 ' « H* •tf- 2SC 2314 2SC 2 3 1 5 ^ ' ÎL = * SANYO 2SC 2SC 2322 ŸÀ T MATSUSHITA

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

pa1476h

Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674