2SB868
Abstract: 2SD960
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB868 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -3A ·Complement to Type 2SD960
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2sb8682sd960-100v |
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2SB868
Abstract: 2SD960
Contextual Info: SavantIC Semiconductor Product Specification 2SB868 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD960 ·Low collector saturation voltage ·High collector current capability APPLICATIONS ·For power switching applications
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2sb868o-220c2sd960o-220+1-100v
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2SB868
Abstract: 2SD960
Contextual Info: Inchange Semiconductor Product Specification 2SB868 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD960 ・Low collector saturation voltage ・High collector current capability APPLICATIONS ・For power switching applications
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2sb868o-220c2sd960o-220 |
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2SB868
Abstract: 2SD960
Contextual Info: JMnic Product Specification 2SB868 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD960 ・Low collector saturation voltage ・High collector current capability APPLICATIONS ・For power switching applications
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2sb868o-220c2sd960o-220+1-100v
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2SD960
Abstract: 2SB868 SC46A
Contextual Info: 2SD960 2SD960 '> iJ rj y N PN \/~?l— zt~lf2/Si NPN Epitaxial Planar 5^ W J jZ .'f "j P ow er Sw itching U /C o m p le m e n ta ry P a ir w ith 2SB868 2SB868 U n it *. mm 10.5 + 0.5 • 4.8m ax. 1.5max. ^ /F e a tu re s • 3 1/ ^ • X ; 7 • * /L o w
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2sd9602sb868t0-220absc-46+1sc46a
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SB897
Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
Contextual Info: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te
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2sb8592sb8602sb8612sb862+122sb8632sb8552sb867-1320abj2sb8862sb8872sb8972sd1152sb8892sb8912sd11482sd1207
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BD149
Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25
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mje800t2n6296mje2481mje2483+132n3054a2sd10922sd7772sb6042sd570bd1492n6297 motorolalm3661tl-1.402sd526-02sb5960motorola 2n62972sd5260idb596
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2SD921
Abstract: 2SD920 T03B 2SD983 2SB793 2SD933H 2SD947 2SD917 2SD922 2SD923
Contextual Info: - 230 - 13=25*0. *EP(äTc=25'1C m ?± ^ m £ VcBO Vc e o (V) (V) IC ( D C ) föT T V Hout 330 200 7 2SD920 % ± im Reg/PA 200 180 5 Reg/PA 200 180 Reg/PA 150 100 Reg/PA 150 100 Reg/PA 200 HV S W / O ' t O 2SD922 2SD923 % ± im %±Gm -M ± m m 2SD929 2SD933H
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2sd9172sd9202sd9212sd922+102sd9232sd9292sd933h2sd9462sb7892sd968t03b2sd9832sb7932sd947
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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mn115pmn116pmn1201amn1201m+15mn1201smn1202mmn1204amn1204bmn1204emn1204fan6512nmn1225mn1280mn6520mn6130mn6147cmn12c261dmn12c201dmn3107
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2SD650
Abstract: 2SC4711 MG30G1BL3 2SD670 hitachi 2SD731 2SD670 2SD837B 2SD678 2sd699 2SD683
Contextual Info: - 22 0 - tt M € Type No. « Manuf. SANYO 2SD 677 K 2 TOSHIBA m NEC HITACHI ll * ± a FUJITSU tö T MATSUSHITA MITSUBISHI □ — A ROHM 2SD2132 2SC2139 2SD 678A fö T 2SC3144 2SD635 2SD560 2SD1275A 2SD1932 2SD 679A tö T 2SD1190 2SD634 2SD560 2SD1276A 2SD1932
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2sc21392sd213z2sc31442sd635+152sd5602sd1275a2sd19322sd11902sd6342sd6502sc4711mg30g1bl32sd670 hitachi2sd7312sd6702sd837b2sd6782sd6992sd683
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2SD945
Abstract: 2SD988 2SD924 2SD977 2SD972 2SD984 2SD988 equivalent 2SD925 2SD996 2SD902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 25W 2SD901 200 5 2A 150 100 10 400 (Tc=25ºC) 80W 2SD902 350
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2sd9012sd9022sd9032sd904+152sd9052sd9062sd9072sd9082sd9092sd9102sd9452sd9882sd9242sd9772sd9722sd9842sd988 equivalent2sd9252sd996
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-upstk442-130m56730asppac011a+7pac010aupc2581pal005astk413-020aupc2581vecg semiconductors master replacement guidestrs5717
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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MN1280
Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Contextual Info: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074
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mn1380mn13801mn13802mn1381+16mn13811mn13812mn1382mn13821mn13822mn1544mn1280an6512mn15814mn152452sb1163amn158413an7210an7226mn15287mn15283
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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mn101c01cmn15224mn101c01dmn15226+16mn101c027mn15261mn101c03amn101c38amn15263mn101c06dmn1873287an6512n2sk3190mn171202mn158413mn15142mn187164mn6740an7210mn15283
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2n30542n327412n42402n4908+162n3054a2n37662n42732n49092n30552n3767strs6307str54122n3055 to-220s2000a3strs6309s2000a2bdw362sc3883strs6308str6020
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2SB832
Abstract: 2sd1047 equivalent 2SB837 2SB843 2SD1077 2sb875 2SB803 2SB818 2sb895 2SB845
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB801 -45 -5 -1A 400 150 100 -2 -150 80* 26 2SB802 -60 -5 -1A
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2sb8012sb8022sb8032sb804+152sd10052sb8052sd10062sb8062sd1007902sb8072sb8322sd1047 equivalent2sb8372sb8432sd10772sb8752sb8182sb8952sb845
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WFA 21
Abstract: 2SB867 2SB868 2SD960 2SD953 2SD959
Contextual Info: JG ‘-esaS! PANASONIC INDL/ELEKiSEMI} 7SC D j 1^32054 □□□TMbO □ h ^ J V 7 / 9 2SD953 2SD953 '> IJ N P N H lf Ì É i f c .^ l f ^ / S i N P N Triple Diffused Junction Mesa ;$iSiiè5fc7K¥ffiSréJtti:frffl/ Line-Operated Horizontal
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2sd953wfa 212sb8672sb868+22sd9602sd959
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