2SD288
Contextual Info: SavantIC Semiconductor Product Specification 2SD288 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Collector-base voltage : VCBO=80V ·Collector dissipation : PC=25W TC=25 APPLICATIONS ·Low frequency power amplifier ·Power regulator applications
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2sd288o-220c |
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2sd288
Abstract: 2sD288 Y
Contextual Info: Inchange Semiconductor Product Specification 2SD288 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Collector-base voltage : VCBO=80V ·Collector dissipation : PC=25W TC=25℃ APPLICATIONS ·Low frequency power amplifier ·Power regulator applications
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2sd288o-220c2sd288 y |
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2SC2804
Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
Contextual Info: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787
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2sc51t2sc21662sc20732sd859a+142sc39682sc780acg2sc12792sc15152sc15732sc1914a2sc28042sc5172sd4282sc5032sc19232sc19072sc10472sc1809
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NEC 1357
Abstract: SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 2sc4329 D1351 2SD1944 2SC3252 k 1358
Contextual Info: - 238 - m % tt Type No. £ Manuf. H # SANYO It 2Ê TOSHIBA 2SD869 = ft ft 2SD1887 ^ 2SD1884 2SD820 2 S D 1342 = ft 2SD870 H ft 2SD1878 2SD 1343 ✓ 2SD1885 2SD821 2SD 1344 H ft 2SD18B5 2SD871 2SD1061 2SD553 2 S D 1340 2 S D 1341 = 2SD 1345 # 2 S D 134/ = ft
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2sd13402sd13412sd13422sd869+162sd8202sd8702sd8212sd8712sd5532sd1173nec 1357sd 13512sd13702sd869 toshibanec 2sd2882sc4329d13512sd19442sc3252k 1358
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toshiba 2sd425
Abstract: 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD287C 2SD1391 2SD313 2SD867
Contextual Info: - m « € T y p e No. ' d 2SD 288 ^ 2SD 289 y B V B « a c 2SD 290 ^ 2SD 291 / 2SD 232 —• * 2SD 287 * 2SD 287C * * Manuf. h m SANYO 1m K 2 TOSHIBA A 2SD2023 V - — 2SD867 2SD1135 2SD1897 V - — 2SD880 2SD1135 2SD2023 ¿0UÖÖU ZÔU113ÏI ZSUZUZ3 * 2SD 312
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2sd2872sd287c2sd2882sd289+112sd4252sd3132sd880toshiba 2sd4252sc792nec 2sd2872sd4272sd 3112s08802sd13912sd867
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2SD1555
Abstract: 2SB1833 2SD1876 2SD1878 2SD772 nec 2sc2562 2SD1406 2SD1546 ZSD15 2SD1548
Contextual Info: - Si € Type No. 2SD 18S3^-2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2S0 1584 *•" 1885 ^ 1886 y 1887 ^ 1888 , 1889 / 1890 ^ 1891 1892 1896 189? 1898 * 2SD 2SD 2SD 2SD 2SD 2S0 2SD 2SD 1899 ~ 1899-Z 1900 1901 1902 „ 1903 * 1904 J 1905 ^ 2SD 2SD 2S0 2S0
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2sd18831899-z2sd15442sd1545+142sd15462sd15472sd15482sd22932sd22952sd22982sd15552sb18332sd18762sd18782sd772 nec2sc25622sd1406zsd15
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2SC789
Abstract: 2sc1060 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671
Contextual Info: TYPE NO. P O L A R IT Y Pow er Transistors CASE M A X IM U M r a t in g s 'c pd IW A) V CEO (V) V C E (S A T ) h fe min max 'c (A) VCE (V) max 'c (V) (A) fT min COM PLE (M Hz) TYPE 2SC789 2SC790 2SC1060 2SC1061 2 S C 1 17 3 2SC1626 N N N N N N T O -22 0
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2sc789o-2202sa4892sc790+82sa4902sc10602sa6702sc10612503142sd3312sa4732sa671
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to3a
Abstract: 2SB536 T03B 2SB511 2SD331 2SD325 2SD3258 2SD314 2SB546A 2SD341
Contextual Info: - 218 - Ta=25T;, *EP(äTc=25*C M £ J± & m & (V) . Vc e o lc(DC) Pc (V) (A) (W) 1 Pc* icBO (W) imax) < jb A> V'CB (V) ft > (min) E fö 4# (max; 14 V’ cE (V) (Ta=25*C) [*EP(ätypfla VcE(sat vmaxj (V) Ic /I e (A) (V) Ic (A) 1b (A) 2SD124AH B \L PSW 75 50
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2sd124ah2sd125ah2sd126h2sd234g+162sd235g2sd2882sd2892sd313sb547at0-220aato3a2sb536t03b2sb5112sd3312sd3252sd32582sd3142sb546a2sd341
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2SC1390
Abstract: 2SC1130 2SC603 2SD331 2sc 1416 y 2SC1268 2sc1730 2SC2999 2SC1252 2SC2058
Contextual Info: - m % * 2SC * 2SC 2SC 2SC * 2SC * 2SC * 2SC * 2SC * 2SC * * * * * * * * * 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1402 1403 1403 A 1404 1405 1406 1407 1409 1409A 1410 1410A 1411 1413 1413A H 1416 1416A 1417 1418 ♦ 2SC 1419 * 2SC 1420 * 2SC 1421 * 2SC 1422
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2sc13872sc13902sc13932sc1394+142sc13952sc13962sc10902sc13992sc12522sc16752sc11302sc6032sd3312sc 1416 y2sc12682sc17302sc29992sc2058
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2S0880
Abstract: 2SD880Y 2sd8800 2SC2335R 250880 BD243 2SD288Y 2SD880GR 2SC2335Y 2SC3039
Contextual Info: TO-220 Power Package Transistors NPN Maximum Ratings Type No. ^CBO ^CEO (V) Min (V) Min Electrical Characteristics (Ta=250C, Unless Otherwise Specified) ^EBO (V) (W) Min @Tc=25°c (A) 'cBO (MA) Max ^C B e (V) ' ces ^C E (MA) Max 0 (V) hFE @ Min Max (A) ^C E
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o-2202sc2335r2sc2335y2sc3039+132sd11632sd1163a2sd288bd239bd239abd239b2s08802sd880y2sd8800250880bd2432sd288y2sd880gr
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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JE350
Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168
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bd135bd136bd137bd138+16bd139bd140bd142bd144bd157bd158je350je180mj13004tp33cbd325je172bdx48je340bd160but55
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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B0411
Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171b0411b0733thd200f1dk522sc49772n5415 replacementtip 2n3055bd68dsgs-thomson cross referencebux37 thomson
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2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905
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2n44012n54012n55512sa1004+162sa10102sa10132sa10152sa10162sa10172sa10192sc3133 cross referencehitachi 2sc281nec d882a564ad1163a2sc1815 cross referencea628akrc1211kra2203nec d288
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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usfb053usfb13usfb13ausfb13l+16usfb14usfz10vusfz11vusfz12vusfz13vusfz15vkf6n602sk3850 equivalentkf9n25kf7n50mdf10n65b transistorpanasonic zenerkf10n60kia278r12pi equivalentkid65003ap equivalentkia578r05
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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pd7500x10679ejav0sg00mf-11341995p+10upc2581upc20022sd1557upa67cupb582upc1237upc3172p4m pin diagram2sc4328upc157
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transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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mil-hdbk-217c11178ejcv0iftransistor nec 2sk2500nec 2sk2500+82sk2500n13t12sk2500 equivalentupc1037haupc648c2sh252sk2500 transistor2sh24
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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bd157bd158bd159tip73b+16tip74tip74atip74btip75tip75atip75bmje4942sc1419bd 8042sd675mje104bd581bd135 curvesmj1000dts-40412n5037
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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mje521mje371tip73btip74+16tip74atip74btip75tip75atip75btip75cmje521 equivalentbu1082n3055 plastic2n6488 motorolamotorola transistors mje3055 to 1273904 transistorbdx54tip122 tip127 audio ampbu326bu100
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