2SC1061
Abstract: 2SC1060 2Sc1060 equivalent 2SA671 2SC1061 C
Contextual Info: Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power amplifier applications
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2SA670
Abstract: 2SA671 2SC1061
Contextual Info: Inchange Sem iconductor Product Specification S ilicon PNP Power Transistors 2SA671 DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC1061 • Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS - /*v • Designed for use in low frequency
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2SC1061
Abstract: 2SC1060 2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2sc1061 datasheet 2SA671
Contextual Info: Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power
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2sc1061o-2202sa6712sc1060+42sc1060 equivalent2sc1061 b2sc1061 equivalent2sc1061 datasheet
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2SA671
Abstract: 2SC1061 2SA670 2SC1061 PNP
Contextual Info: JMnic Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1061 ・Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ・Designed for use in low frequency power amplifier applications
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2SC1061
Abstract: transistor 2SC1061 2sC1061 transistor 2SA671 2sc1061 npn transistor 2SC1061 PNP 2SC1061 f L50C power Transistor 2SC1061
Contextual Info: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN .designed for use in low frequency power amplifier applications 2SC1061 FEATURES: * Low Collector-Emitter Saturation Voltage v CE satf 1 0 V (Max @ I c =2.0A,I b=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A
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2sa6712sc1061transistor 2sc10612sc1061 transistor+52sc1061 npn transistor2sc1061 pnp2sc1061 fl50cpower transistor 2sc1061
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2SC789
Abstract: 2sc1060 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671
Contextual Info: TYPE NO. P O L A R IT Y Pow er Transistors CASE M A X IM U M r a t in g s 'c pd IW A) V CEO (V) V C E (S A T ) h fe min max 'c (A) VCE (V) max 'c (V) (A) fT min COM PLE (M Hz) TYPE 2SC789 2SC790 2SC1060 2SC1061 2 S C 1 17 3 2SC1626 N N N N N N T O -22 0
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2sc789o-2202sa4892sc790+82sa4902sc10602sa6702sc10612503142sd3312sa4732sa671
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2SC1061
Abstract: Transistor 2sC1061 2SA671 2sA671 transistor 2sC1061 transistor 2SC1061 PNP
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION •Low Collector Saturation Voltage: VCE SUS = -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier
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2sa6712sc1061transistor 2sc10612sa671 transistor+22sc1061 transistor2sc1061 pnp
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2SC1061
Abstract: 2sc1060 2SA671 2SC1061 C 2SC1061-C
Contextual Info: SavantIC Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications
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2sc1061o-2202sa6712sc1060+22sc1061 c2sc1061-c
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60B120
Abstract: 2SA671 2SC1061
Contextual Info: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS PNP 2SA671 .designed for use in iow frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf @ ic=2.0A,lB=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to NPN 2SC1061
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2SC1061
Abstract: 2SA671 2sA671 transistor Transistor 2sC1061 2sa671 equivalent 2sC1061 transistor 2sc1061 equivalent
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION •Low Collector Saturation Voltage: VCE SUS = -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier
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2sa6712sc10612sa671 transistortransistor 2sc1061+32sa671 equivalent2sc1061 transistor2sc1061 equivalent
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2SC1061
Abstract: 2SA671 transistor 2SC1061 2sA671 transistor
Contextual Info: 2SA671 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1061 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)
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2SC1061
Abstract: transistor 2SC1061 2sc1061 npn transistor datasheet 2SA671 2sc1061 npn transistor
Contextual Info: 2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)
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2sc1061o-2202sa671transistor 2sc1061+22sc1061 npn transistor datasheet2sc1061 npn transistor
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2sa671
Abstract: 2SA670 2SC1061 2sa671 equivalent 2SC1061 PNP
Contextual Info: SavantIC Semiconductor Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1061 ·Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ·Designed for use in low frequency
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2n6125
Contextual Info: Power Transistors TYPE POLA NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100
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mh8100mh8106mh8108mh8700+4mh0810mh0816mh08182n6125
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7ic mb4213nec 12f triacf10p048ktc3114 equivalentsmd transistor marking 02ndiode pj 57 ss14bc517 equivalent
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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bd157bd158bd159tip73b+16tip74tip74atip74btip75tip75atip75bmje4942sc1419bd 8042sd675mje104bd581bd135 curvesmj1000dts-40412n5037
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
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"Tektronix 475"
Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,
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48/buxbux48bux48aampere32+16tip73btip74tip74atip74btip75tip75atektronix 475equivalent 2n6488tip42c equivalentbu108motorola darlington power transistormotorola 266 to-204aa transistord45h11 equivalent replacementpnp buxtransistor replacement table for transistortip3055 equivalent
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D42C5
Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
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mje16204tip73btip74tip74a+15tip74btip75tip75atip75btip75cd42c5transistor bc 6472n5302 ebpin out transistor tip2955bs170 replacement2sc141bu108bc 658motorola transistors mje3055 to 127mc7812 to-220
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