2SD1947A Search Results

2SD1947A

Contextual Info: TO SH IBA 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD1947A Unit in mm HIGH CURRENT SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS r • • High DC Current Gain : hjrE = 500~ 1500 l£ = lA Low Collector Saturation Voltage : VCE ( s a t ) = 0.3V (Max.) (IC = 5A)

D1947

Abstract: D1947A 2SD1947A
Contextual Info: 2SD1947A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)

D1947A

Abstract: D1947 2SD1947A
Contextual Info: 2SD1947A 東芝トランジスタ シリコンNPNエピタキシャル形 2SD1947A 通 信 工 業 用 ○ 大電流スイッチング用 ○ ランプソレノイド駆動用 単位: mm • 直流電流増幅率が高い。 • コレクタ飽和電圧が低い。 : VCE sat = 0.3 V (最大) (IC = 5 A)

Contextual Info: 2SD1947A TO SHIBA 2 SD1 9 4 7 A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS • • INDUSTRIAL APPLICATIONS Unit in mm High DC Current Gain : hFE = 500-1500 Oc = lA Low Collector Saturation Voltage

D1947

Abstract: 2SD1947A dsae00215
Contextual Info: 2SD1947A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)

KF 25 transistor

Abstract: 2SD1947A
Contextual Info: TO SH IBA 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD1947A HIGH CURRENT SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS 10 ±0.3 High DC Current Gain : hjrE = 500~ 1500 l£ = lA Low Collector Saturation Voltage : VCE (sat) = 0.3V (Max.) (IC = 5A)

d1947

Abstract: D1947A
Contextual Info: 2SD1947A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)

2SD1947A

Contextual Info: T O S H IB A 2SD1947A 2SD1947A TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SW ITCHING APPLICATIONS LA M P , SOLENOID DRIVE APPLICATIONS • • INDUSTRIAL APPLICATIONS Unit in mm r High DC Current Gain : hjrE = 500~ 1500 I0 = 1A Low Collector Saturation Voltage

D1947A

Contextual Info: 2SD1947A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)

2SD1947A

Contextual Info: 2SD1947A TO SH IB A 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS t • High DC Current Gain : hFE = 500-1500 Ic = lA Low Collector Saturation Voltage

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

transistor

Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.