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    2SD1720 Search Results

    2SD1720 Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD1720
    Unknown Japanese Transistor Cross References (2S) Scan PDF 35.08KB 1
    2SD1720
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 87.1KB 2
    2SD1720
    Unknown Transistor Substitution Data Book 1993 Scan PDF 39.83KB 1
    2SD1720
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 41.4KB 1
    2SD1720
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 117.68KB 1
    2SD1720
    ROHM Japanese Transistors Scan PDF 66KB 1
    2SD1720
    ROHM TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Scan PDF 89.98KB 2
    2SD1720
    ROHM TO-220, TO-220FP, TO-220FN, HRT Transistors Scan PDF 209.93KB 2

    2SD1720 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SD1720 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


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    2sd1720 PDF

    Contextual Info: h ~y > v 7s £ / I ransistors 2SD1720 = S J £ t& 7 °U - i - M NPN V V □ > h 7 > V 7 2 1 £ J i}j£ il:fr* llP lffl/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor 2SD1720 • && s 4 y jv ;V d i7 r • ^ •^ •rfS H I/D im e n s io n s U n it: mm


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    2sd1720 PDF

    2SB1291

    Abstract: 2SD1720
    Contextual Info: SavantIC Semiconductor Product Specification 2SB1291 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Low saturation voltage ·Complement to type 2SD1720 ·Excellent DC current gain characteristics ·Wide area of safe operation APPLICATIONS


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    2sb1291o-220c2sd1720o-220 PDF

    Contextual Info: 4GE » ROHM CO LTD 7 0 2 f l cm D O O S 1^ IRHM =1 /Transistors 2SD1720 'T - 3 3 - / I 2SÛ1720 • NPN y V 3 > iif f f l/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor ‘ • ^ Jfi^ jÉE iJ/D im en sion s Unit: mm 1) V ce ( sat) = 0 . 3 V (Typ.)


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    2sd17202sd172 PDF

    2SD1720

    Contextual Info: h7 > y 7. $ / J ransistors 2SD1720 2SD1720 Triple Diffused Planar NPN Silicon Transistor S ü J 5 ^ J iil1iffl/Low Freq. Power Amp. • £ | f f i ^ t > £ 0 / D'mensions U nit : mm) 1) VCE(sat) fi^ 'o VcE(sat)=0.3V(Typ.) (Ic / I b =3A /0.3A ) 2) h F E f D Ï J f t ^ t É ^ 'â l'o


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    2sd1720 PDF

    2SB1168

    Abstract: 2sb1163 2SD1731 2SD1713 2SD1714 2SD1715 2SD1716 2SD1718 2SD1719 2SD1720
    Contextual Info: - 262 - Ta=25XïP*Ef]fÎTc=25eC m 2SD1713 2SD1714 2SD1715 2SD1716 2SD1717 2SD1718 2SD1719 2SD1720 2SD1722 2SD1723 2SD1724 2SD1725 2SD1726 2SD1727 2SDÌ728 2SD1729 2SD1730 2SD1731 2SD1732 2SD1733 2SD1733F5 2SD1734 2SDÎ735 2SD1736 2SD1737 2SD1738 2SD1739


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    2sd17132sd17142sd17152sd1716+92sm7172sd17182sd17192sd1720t0-220f2sd17342sb11682sb11632sd1731 PDF

    2SB1291

    Abstract: 2SD1720
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1291 DESCRIPTION •High Collector Current: IC= -5A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1720


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    2sb12912sd1720 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF

    2SC3258

    Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
    Contextual Info: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T


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    2sc30902sc41572sc28122sc2712+142sc16232sc24632sd601a2sc2412k2sc42112sc41162sc32582sc39502sc320939182sc25622sc39582sc38742sd667 PDF

    2S0880

    Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
    Contextual Info: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U


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    2sc7902sd7952sd11352sd389+112sd20232sd3132sc792sd3902s08802sd427sd 3382sd4282sd8802sc23202sc1815 PDF

    2SB1335A

    Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
    Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)


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    3sk212o-220o-220fp2sd1562+152sb10852sd17632sb11862sd20332sb13532sd1562a2sb1335a2sd20372sd206128c432sb13572sb13592sd20412sd20962sd1856 PDF

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


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    2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c PDF

    SB1335A

    Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
    Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


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    o-220t0-220fpo-220fno-220fp+11t0-220sb1335a2sd20612sd2033a2sb14962sb1342transistor 2sd20912sd23942sb13702sc43542sd2041 PDF

    2SD2037

    Abstract: 2SC4354 2sd2041 2SD2036 2SB1335 2SB1359 2SD1832 2sd1856 2SD2034 2SB1293
    Contextual Info: R OHN CORP □1 D E l ? f l a f l 1 cn -i" f nfiffirr DGDllta 3 W - I '-” I 7 ~ -Z 9 * & / D P i . ; ij 4 * ^ » p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji • TO-220, TO-220FP Types p - , * New Products


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    o-220o-22qfp2sb1293t0-220+122sb1294t0-220fp2sb13342sb13352sd20372sc43542sd20412sd20362sb13592sd18322sd18562sd2034 PDF

    Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


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    t0-220t0-220fpo-220fno-220fp+3o-2202sa16342sb1369 PDF

    2SC1740 transistor

    Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
    Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN


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    2sc2021ln2sb8212sb12762sc2021mln+16o-92lo-92ls2sb737v2sd7862sa11372sc17402sc1740 transistora1757b1130am2sd2061f2sd14662sc5083b1236amos-fet darlington2sc4721transistor 2sa1819 PDF

    2sd1954

    Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
    Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o


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    2sa790m2sa874m2sa937am2sa937amln+162sb909m2sb910m2sb911m2s61042m2sb1044m2sb1066m2sd19542sc5083dtc144eva2sc2030dtc114yla2sc47222sd1228m qrdtd123yv2sc2675dtb143ts PDF

    to-53

    Abstract: TO111 2N5978 NPN
    Contextual Info: POWER SILICON TRANSISTORS Item Number »C Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (Hz) r •CBO Max (A) Max (s) (CE)sat Max (Ohms) T Oper Package Style Max (°C) D vie s 20 Watts or More, (Cont'd) . . .5 . .10 . . . -15 -20


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    2n41122sa1069k2sa12o-111+3to-53to1112n5978 npn PDF

    Contextual Info: ROHM CO LT D 40E D B T ô a û T ïT 0D0Sfc.03 K ÿ > y X £ /Transistors 1 BIR HM 2SB1291 7 -3 3 -/7 1 1 ° £ * V 7 ^ 7 ° U - * pNP y 'J □ > N7 > y * ^ '®:üM®^JiHllIlÆ /L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor 2 • ÿ fffÎ^ jÈ lS /D im e n sio n s Unit: mm


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    2sb12912sd1720 PDF

    sc 3228

    Abstract: C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812
    Contextual Info: - 15 6 - §ä « T y p e No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »H m ? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * ' 2SC 3193 / 2SC 3194 2SC 3195 ¿ 2 SC 3196 h n T O S HIBA «am i »am ? 2SC 3199 X


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    2sc31862sc31872sc31892sc3190+152sc31912sc31922sc31932sc31942sd10852sc3468sc 3228c34682sd21592sc 32052sd8802sc32962sc2320c29812sd1812 PDF

    2SD2037

    Abstract: 2SC4354 2SD1761 J0801 2SB1335 2SB1353 2SD1832 2sd1856 2SD2034 2SB1293
    Contextual Info: ROHN CORP □1 D E l ? f l a f l 1 cn -i" f DGDllta . - I '-” W 3 I P i . ; 7 ~ -Z 9 * & / D ij4 * ^ » n f if f ir r • TO-220, TO-220FP Types p - , i l i 111 n l * New Products Type, - Funclibn_ Driver p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji


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    o-220o-22qfp2sb1293t0-220+122sb1294t0-220fp2sb13342sb13352sd20372sc43542sd1761j08012sb13532sd18322sd18562sd2034 PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    100-upstk442-130m56730asppac011a+7pac010aupc2581pal005astk413-020aupc2581vecg semiconductors master replacement guidestrs5717 PDF

    2SB1291

    Abstract: 2SD1720
    Contextual Info: 2SB1291 h "7 > v 7s $ /T ra n s is to rs X tf 2SB1291 PNP > V =l > S ? > y X 2 Epitaxial Planar PNP Silicon Transistor fiJi;& li^ i# fii# i/ L o w Freq. Power Amp. ^•Jfí'+iíISl/Dimensions Unit: mm 1) VcE(sat) A 'lf t l'o V c E (s a t|= —0.3V (Typ.)


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    2sb12912sd1720 PDF

    2SD2159

    Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
    Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise


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    2sa825s2sa830s2sa854s2sa933as+152sa933asln2sa1198s2sa1199s2sa1515s2sa1585s2sc1645s2sd21592sd24212sb14852sb13332sd20612sc2021qrs2sd21722sd2388darlington rf PDF