2SD1733F5 Search Results

D1733

Abstract: 2SD1733F5 MARKING CODE f5 transistor BA 14 2SB1181 TA-10-03 2SD1733FS BA, TRANSISTOR
Contextual Info: 2SD1733F5 Transistor, NPN Features • available in CPT F5 SC-63 package • package marking: D1733-AQ, where ★ is hFE code and Q is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage

2SD1733F5

Abstract: 2SB1181F5
Contextual Info: h ~7 > V ^ £ / T ransistors 2 S D 1 T 3 3 p 2SD1733F5 g i e i r ^ “ > 7 ^ y i / - t » N P N Epitaxial Planar NPN Silicon Transistors i& J iiÄ ^ ^ iitiffl/L o w Freq. Power Amp. • WfêTj-jiia/Dimensions Unit : mm • 435 1) W E , ife"P<fc -5 o V ceo — 8 0 V ? lc = 1 A

Contextual Info: ROHM CO LTD MOE 5 n 7 0 2 0 = ^ 0005^45 T • RHM h*-7 > y Z. $ / I ransistors 2SD1733/2SD1733F5 T-ZZ-07 2SD1 733 0 9 ^ 4 • w i l l NPN y ‘J = l > i S J U j M ^ l f f l / L o w Freq. P ow er Amp. Epitaxial Planar NPN S ilico n Transistors 7 ^ ^ ^ ^ / w ilF S

Contextual Info: / T ransistors 2SD1733/2SD1733F5 2SD 1733 2SD 1733F5 NPN ' > V = i > b - 7 > v Z $ Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors • 1 raBGE, \ l i ± l l / Dimens'ons U n it: mm) tfe-5 0 V c e o — 80 V , lc = 1 A 2) Low V ce ( sat | T i 5 O

2SB1168

Abstract: 2sb1163 2SD1731 2SD1713 2SD1714 2SD1715 2SD1716 2SD1718 2SD1719 2SD1720
Contextual Info: - 262 - Ta=25XïP*Ef]fÎTc=25eC m 2SD1713 2SD1714 2SD1715 2SD1716 2SD1717 2SD1718 2SD1719 2SD1720 2SD1722 2SD1723 2SD1724 2SD1725 2SD1726 2SD1727 2SDÌ728 2SD1729 2SD1730 2SD1731 2SD1732 2SD1733 2SD1733F5 2SD1734 2SDÎ735 2SD1736 2SD1737 2SD1738 2SD1739

D1733

Abstract: transistors 2sd 2500 2SD1733F5 transistor 239
Contextual Info: 2SD1733F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1733-*Q, where ★ is hFE code and □ is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage

2SD1733F5

Contextual Info: h -7 > y 7k$ /Transistors 2SD1733F5 1 • w w r W Epitaxial Planar NPN Silicon Transistors Freq. Power Amp. i W f ^ t ; i @ / D imensions Unit : mm V ceo = 80V , lc = 1 A 6 .5 ± 0 . 2 5. 2) Low Vce (sat) T’ & -5 0 r + 0 2 -0 I , i Í 3) 2SB1181F5 ¿ = l > y j T ' * 5 o

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

IMH10

Contextual Info: Index Index 2SA1036K 69 2SA1037AK 73 2SA1514K 77 2SA1576A 73 2SA1577 69 2SA1579 77 2SA1727F5 81 2SA1759 85 2SA1774 73 2SA1797 89 2SA1807F5 92 2SA1834F5 96 2SA1862F5 100 2SA1870 104 2SA1900 106 2SC4617 169 2SC4649 160 2SC4672 201 2SC4713K 204 2SC4774 204 2SC4938 209

tc 144e

Abstract: ry 130-2 TZ 1148 413 a933s C2673 TA78 739 TZ 1148 mc 1302 L 930DT
Contextual Info: M H /T y p e Number List I' -y > v X £ /T ransistors 2S A785. 75 2S A 790. 78 2 S A 7 9 0 M .81

Contextual Info: / T ransistors 2SB1181 i t ° 2 * ' > 7 ^ U 7 ° U - : H £ P N P '> U = I > h 7 > y ^ ^ 2SB 1181 Epitaxial Planar PNP Silicon Transistors ISJijJ& Elifril'Uffl/Low Freq. Power Amp. • ^Jfi'tfjiEI./D im ensions Unit : mm ± n m T ‘$>Zo 1) S W U , V c e o = —80V, lc = — 1A

2SB1181F5

Abstract: 2SD1733F5
Contextual Info: V~7 > v X £ /Transistors 2 1 S B 1 8 1 2S B 1181F5 F 5 Epitaxial Planar PNP Silicon Transistors ftS i& S ^ lfS tiffi/L o w Freq. Power Amp. i ^ J f^ jiB /D im e n s io n s Unit : mm • &£ Vqeo= —80V, lc = —1A ^ h p E r o iJ - T - U x - f i f & ' o

Contextual Info: 2SB1181F5 / T ransistors 2SB 1181F5 x t '$ * y 7 J l '7 L '- + B P N P y 'J 3 > b 7 > y Z $ Epitaxial Planar PNP Silicon Transistors if t l^ l^ ii'U f f l/L o w Freq. Power Amp. W f ? " i ; £ l ! / D ir n e n s io n s U n i * : m m 1 ) ia S H E , V ceo= — 80V ,

2SD1966

Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Contextual Info: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5