2SA2007
Abstract: 2SC5526
Contextual Info: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 !External dimensions (Units: mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A) 2) High switching speed. (Typ. tf = 0.1µs at Ic = 6A) 3) Wide SOA. (safe operating area)
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2sc55262sa2007o-220fn30mhz |
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2SC5525
Abstract: 2SC5103 2SA1952 2SC51 2sa200 2SA2006
Contextual Info: 2SC5103 / 2SC5525 Transistors High-speed Switching Transistor 60V, 5A 2SC5103 / 2SC5525 •Features 1) Low VcE(sat) (Typ. 0.15V at Ic / Ib = •External dimensions (Units: mm) 3 / 0.1 5A) 2) High speed switching (tf: Typ. 0.1 (os at Ic = 3A) 3) Wide SOA. (safe operating area)
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2sc51032sc55252sc510312sc55252sa195212sa2006+6100ms2sc5130mhz2sa19522sa2002sa2006
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2SC5103
Abstract: 2SC5525 2SA2006 2sa200 2SA1952
Contextual Info: 2SC5103 / 2SC5525 Transistors High-speed Switching Transistor 60V, 5A 2SC5103 / 2SC5525 !Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952 / 2SA2006.
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2sc51032sc55252sa19522sa2006+2100ms2sa200
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2SA2007
Abstract: 2SC552 2SC5526
Contextual Info: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 !External dimensions (Units: mm) !Features 1) Low saturation voltage, typically VCE(sat) = 0.15V at IC / IB = 6A / 0.3A. 2) High switching speed, typically tf = 0.1µs at Ic =6A. 3) Wide SOA. (safe operating area)
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2sc55262sa2007o-220fn100ms+230mhz2sc552
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SWITCHING TRANSISTOR 60V
Abstract: 2SC5526 6a10 6A10 DC 2SA2007 TO-220FN
Contextual Info: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 •External dimensions (Units: mm) •Features 1) Low saturation voltage, typically VcE<sat)=0.15V at Ic / Ib = 6A / 0.3A. 2) High switching speed, typically tf=0.1 (is at Ic =6A. 3) Wide SOA. (safe operating area)
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2sc55262sa2007o-220fn30mhz+50q2m43sswitching transistor 60v6a106a10 dcto-220fn
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b1375
Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39
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2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340sb13752sk270a2sk150amg15g1al22sa1051bmg50g2cl1mg100g1al22sa1015a1265nmg100g1al1
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2SK 150A
Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015
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2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340s2sk 150amg100g1al22sd13652sc2461 b2sk302sc102c366gb1375mg15g1al21265n
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2SA2006
Abstract: 2SA1952 2SA1906 2SC5103 2SC5525 SC-83A
Contextual Info: 2SA1952 / 2SA1906 / 2SA2006 Transistors High-speed Switching Transistor −60V, −5A 2SA1952 / 2SA1906 / 2SA2006 !External dimensions (Units : mm) !Features 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC / IB = −3 / −0.15A)
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2sa19522sa19062sa20062sc5103+22sc5525sc-83a
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2SC5526
Abstract: SWITCHING TRANSISTOR 60V 2SA2007 transistor A6A
Contextual Info: 2SA2007 High-speed Switching Transistor -60V-12A 2SA2007 •External dimensions (Units : mm) •Features 1) High switching speed. (Typ. tf=0.15,us at Ic= -6A) 2) Low saturation voltage. (Typ. VcE(sat)= -0 .2 V at Ic / Ib = -6 A / -0.3A )
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2sa2007-60v-12a2sc5526o-220fn+430mhzo-22qfnswitching transistor 60vtransistor a6a
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr
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2sd155
Abstract: SN232 BLY92 2SD154 BD109 BLY88 TIP27 MD17A X51c stc1201
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors kI B H H LINE No. TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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npn110bly88bly92700mi+14500mimt72cbuy43mht5901mht590210on02sd155sn2322sd154bd109tip27md17ax51cstc1201
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BD264
Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C
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bd264tip27bd109s1050+6bd263bd264ably88bly92s708transistor bd400
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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2SC5553 transistor
Abstract: transistor 3E TO36 2sc5522 M.P Diode
Contextual Info: Horizontal Deflection Transistor Series for TV • Overview B ased on accum ulated m anufacturing technology, these horizontal deflection transistors for TVs offer high perform ance and com pact design. T hey can also w ithstand high voltage and m aintain low loss. T hey also have a broad area o f safeoperation, despite an absolutely m inim al chip area which allow s very com pact package configuration. These advanced
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500v/1600v/1700v/1800v2sc55722sc5518/2sc55235517/2sc5522+72sc5519/2sc55242sc5516/2sc2sc5553 transistortransistor 3eto362sc5522m.p diode
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transistor 2SC114
Abstract: transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t * - k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C
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npn110pt6905apt6905bpt6905c+15100msa100m5amm2261mm2262mm2263transistor 2sc114transistor bd400bd1092sc114 transistortransistor t08usaf516es047m2sc1142sd155 ltransistor 2sd154usaf517es060m
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2SC557
Abstract: 2SC548 kt200 2sc431 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) 2SC401 2SC402 2SC402A 2SC403 2SC403A 50 50 50 50 50 5 100 100 100 100 100 100 100 180 100 180 2SC403B 50 4 100 320 2SC403C 60 4 100 320 2SC404 2SC405 2SC406 50 25 25 3 50 15 200
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2sc4012sc4022sc402a2sc403+142sc403a2sc403b2sc403c2sc4042sc4052sc4062sc5572sc548kt2002sc4312sc5462sc5162sc5562sc500
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mg75n2ys40
Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種
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02bz21s20921sz575902cz2+161s20942n305502cz51s2095a2n371302z24a1mmg75n2ys40mg15n6es422sk150a2sk270amg150n2ys40mg8n6es42mg15g1al2mg75j2ys40mg30g1bl2s2530a
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2SC5521
Abstract: 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546
Contextual Info: New Horizontal Deflection Transistor Series for TV • Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced
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500v/1600v/1700v/1800v/2000v2sc55212sc55222sc5584+72sc55242sc55172sc55162sc5516 equivalent2sc55722sc56222sc5546
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3182N
Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
Contextual Info: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6
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2sc387a2sc18152sc2347t2456+162460b2sc24612461b2sc24812sc25312sc32813182n2sd4242b1375a10152482s2sc 10911s16581s24522sc2074c1172b
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2SC5526
Contextual Info: 2SA2007 Transistors High-speed Switching Transistor −60V,−12A 2SA2007 !External dimensions (Units : mm) !Features 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A) 2) Low saturation voltage. (Typ. VCE(sat) = −0.2V at IC / IB = −6A / −0.3A)
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2sa20072sc5526o-220fn |
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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mg75n2ys40
Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106daa1ytf8422sk2387ytf441+152sk2149ytf6132sk2381ytf843ytf442mg75n2ys402n3055 toshibamg150n2ys40tlr103toshiba 2n3055mg15n6es422sk150atoshiba mg150n2ys402sk270as2530a
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