2SC2668 Search Results

2SC2668

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2668 TO-92S TRANSISTOR NPN 1. EMITTER FEATURES z Small reverse transfer capacitance z Low Noise Figure 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC2668

Abstract: transistor 2sc2668
Contextual Info: ST 2SC2668 NPN Silicon Epitaxial Planar Transistor High frequency amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

2SC2668-Y

Abstract: 2SC2668
Contextual Info: TOSHIBA 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • Sm all Reverse Transfer Capacitance • Low Noise Figure : U nit in mm Cre = 0.70pF (Typ.)

2SC2668

Contextual Info: ST 2SC2668 NPN Silicon Epitaxial Planar Transistor High frequency amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sc2668

Abstract: NF550
Contextual Info: 2SC2668 TO-92S Transistor NPN TO-92S 1. EMITTER 2. COLLECTOR 123 3. BASE Features — Small reverse transfer capacitance Low Noise Figure — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO

2SC2668

Contextual Info: ST 2SC2668 NPN Silicon Epitaxial Planar Transistor High frequency amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2668 TO-92S TRANSISTOR NPN 1. EMITTER FEATURES z Small reverse transfer capacitance z Low Noise Figure 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

EU100

Abstract: 2SC2668-Y 2SC2668 QE RB 29
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SC2668 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS 4 .2 M A X . • • Small Reverse Transfer Capacitance : Cre = 0.70 pF (Typ.)

Contextual Info: T O SH IB A 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.) Low Noise Figure

Contextual Info: 2SC2668 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)20m Absolute Max. Power Diss. (W)100m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)

2SC2668

Contextual Info: ST 2SC2668 NPN Silicon Epitaxial Planar Transistor High frequency amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2668

Abstract: 2SC2668Y vqb 27
Contextual Info: TOSHIBA 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. 4.2 M AX. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.)

2SC2668

Abstract: 2sc2668 transistor transistor 2sc2668
Contextual Info: 2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2668 High Frequency Amplifier Applications FM, RF, IF Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.70 pF (typ.) · Low noise figure: NF = 2.5dB (typ.)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

C2482

Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Contextual Info: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

MF522

Abstract: transistor c 1923 1SV101 equivalent 1sv149 sfu450b 5PLG-5147X 2SC2668 mitsumi fm tuner block SFE10 TC9257F
Contextual Info: TAN-321 Audio IC Application Circuit TAN–321 Application Circuit Example of 3-band FM, MW and LW 5-V Tuner TA2149BN + TC9257F 1. Outline TC9257F PLL VT F/E TA2149BN VCO FM AM IF DET MPX L R MW LW The above is an application circuit example of a 3-band (FM, MW and LW) 5-V tuner.

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching