2SC1913
Abstract: 2SC1913A
Contextual Info: Inchange Semiconductor Product Specification 2SC1913 2SC1913A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA913/913A ・Large collector power dissipation ・High VCEO APPLICATIONS ・Audio frequency high power driver
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2sc19132sc1913ao-2202sa913/913a |
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2SA913
Abstract: 2SA913A 2SC1913 IC03A 2sa913 r
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION •With TO-220 package ·Complement to type 2SC1913/1913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver
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2sa9132sa913ao-2202sc1913/1913a+32sc1913ic03a2sa913 r
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2Sc1919
Contextual Info: 2SC1919 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2sc1919freq150mreq150m |
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2SC1913
Abstract: 2SC1913A
Contextual Info: Product Specification www.jmnic.com 2SC1913 2SC1913A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA913/913A ・Large collector power dissipation ・High VCEO APPLICATIONS ・Audio frequency high power driver PINNING
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2sc19132sc1913ao-2202sa913/913a |
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2SA913
Abstract: 2SA913A
Contextual Info: Inchange Semiconductor Product Specification 2SA913 2SA913A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1913/1913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver
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2sa9132sa913ao-2202sc1913/1913a |
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sC4633
Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A
Contextual Info: - 112 - <Ta=25‘C.*EP àïc=25<C m 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1926 2SC1927 2SC1929 2SC1941 2SC1942 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1947 2SC1949 2SC1952 2SC1953 2SC1955 2SC1959 2SC1965 2SC1965A 2SC1966 2SC1967 2SC1968A
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2sc1913a2sc1914a2sc19212sc1922+142sc19232sc19242sc19252sc19552sa562tmo-92jsc46332sc19472sc19492sc19692sc19722sc1971sc-46332sc1940
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hfe1
Abstract: 2SA913 2SC1913 60100w M254 761a
Contextual Info: 2SA913 2SA913 PNP i f c l ^ ^ v T ^"7 L'—"HË!/Si PNP Epitaxial Planar 7 f f l/D r iv e r for A F O utput £a 2SC1913 > 7° 'J ^ U < 7 /C o m p le m e n ta r y P a ir w ith 2SC1913 S t/F e a tu r e s • Z2 u ? & • ^ .y &liEJii VCE0 ¿J^lfijl'o/High VCEO
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2sa9132sc19130-100w7fj10+7t---15tq-220ab10/iahfe160100wm254761a
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2sc1914
Abstract: 2SC1914A
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1914A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1914A is a silicon NPN epitaxial type high voltage transistor OUTLINE DRAWING Unit: mm ¿ 5.6MAX
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2SD3330
Abstract: 2SD333 2sc2673 2SD661A DTC144GS RT1N144C 2SC3870 2SD638 8T1N144S 2SD637
Contextual Info: 2SC 4034 2SC 4035 * * SANYO 3K S TO SHIBA m H ^ B HITACHI ±L « ± a FUJITSU tö T MATSUSHITA □— A 2SD661A □— A 2SD662 □— A 2SC 4036 2SC 4037 « Manuf. O tt ED m € Type No. m = MITSUBISHI □ — A ROHM 2SC1914A 2SC1613A 2SC1651 2SÜ662 □— A
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2sd661a2sc1914a2sc1613a2sd662+132sc16512sd7342sd6382sc35812sc16522sd33302sd3332sc2673dtc144gsrt1n144c2sc38708t1n144s2sd637
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2SC1913
Abstract: 2SA913 AW14 2SC1913A 2SA913A
Contextual Info: 2SC1913, 2SC1913A 2SC1913, 2SC1913A NPN x tf ^ '> ij 13 > 2SA913, 2SA913A 7 JUZf l* NPN Epitaxial Planar Power Amplifier £ n > 7 ° ] /• > $ U / Complementary Pair with 2SA913, 2SA913A Unit I mm 10.5 + 0.5 .£ O m 9.8max. 7 V 7.6min. +1 • ¥ f iS /F e a tu re s
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2sc19132sc1913a2sc1913/2sa913+22sa913aaw14
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2SA913
Abstract: 2SA913A lc03a
Contextual Info: AOK AOK Semiconductor Product Specification 2SA913 2SA913A S ilicon PNP Power Transistors DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC1913/1913A • Large collector power dissipation • High V ceo APPLICATIONS • Audio frequency high power driver
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2sa9132sa913ao-2202sc1913/1913a+2-120vlc03a
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2SC1913
Abstract: 2SA913
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA913 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·Complement to Type 2SC1913 APPLICATIONS ·Designed for AF high power dirver applications. n
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2sa913-150v2sc1913-500ma+3-50ma-150ma-100v
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2SC1913
Abstract: 2SC1913A IC03A
Contextual Info: SavantIC Semiconductor Product Specification 2SC1913 2SC1913A Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver
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2SA913
Abstract: 2SA913A 2SC1913
Contextual Info: Product Specification www.jmnic.com 2SA913 2SA913A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1913/1913A ・Large collector power dissipation ・High VCEO APPLICATIONS ・Audio frequency high power driver PINNING
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b1375
Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39
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2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340sb13752sk270a2sk150amg15g1al22sa1051bmg50g2cl1mg100g1al22sa1015a1265nmg100g1al1
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2SK 150A
Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015
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2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340s2sk 150amg100g1al22sd13652sc2461 b2sk302sc102c366gb1375mg15g1al21265n
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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2SC144
Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845
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2sc28392sc13932sc1s552sc1047+102sc180s2sc18552sc18092sc1442sc22402sc16842sc19192sc7632sc9452sc1775a
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2N1077
Abstract: A472 G 2N1076 CI2923 2N1074 CK420 2sc196 2sc191 2N1075 2sc113
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bsw88200msa15on0bsw89+14bsx81200m5absx81absx81b2n1077a472 g2n1076ci29232n1074ck4202sc1962sc1912n10752sc113
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2SC1681
Abstract: 2sc1971 2SC2990 2SC1165 2SC1843 2SC1763 2SC1764 2SC2363 2SD1486 2SC1740LN
Contextual Info: - 118m % T y p e No. * 2SC 1571 * 2SC 1571L tt « Manuf. = ì¥ SANYO 2SC1570 = n 2SC1570 2SC 1573 & T 2SC4218 2SC 1573A & T 2SC4218 * 2SC 1572 * 2SC 15 74 * 2SC 1577 * 2SC 1578 M 2 TOSHIBA 2SC 1681 m b NEC 2SC 1843 B 3L HITACHI 2SC 1775 m ± ii FUJITSU □
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2sc15702sc16812sc18432sc1775+112sc26342sc2320l2sc1740ln1571l2sc19712sc29902sc11652sc17632sc17642sc23632sd1486
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2tx transistor
Abstract: 2SC19 2SC1911 2SC1912 transistor 911 2SC191 VERO ELECTRONICS 2SC19H ic 748 ic 747
Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR r 2SC 2SC a » "J4 ft x * m INDUSTRIAL APPLICATIONS ° High Speed Switching Applications o Twin Typ« Translator fT*=6.5CH* typ O 10mA * * « # MAXIMUM R A T I N G S ( T a = 2 5iC) ^ C H A R A C T E R I S T I C SYMBOL RATING UNIT
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2sc19112sc1912150/unlt2sc19+815min2tx transistortransistor 9112sc191vero electronics2sc19hic 748ic 747
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2SC1915
Abstract: 2SA905 T092 I57H
Contextual Info: =mmmmh=7y=y^? 2SA905 > i a V P N P i k ‘ let s 2 SA 9 0 5 Ü , m USii frJÍCDi/ ') 3 y P N P i f ^ í r ^ 7 -* 7 , v 5 v i ^ x i r t r , f ê J S J i M Œ W s f f l t l tk £ íH \ faoi-fo * s r3¡ < . a iíf- t, s jffis n r S ih F E i : " h F E i l ; iS 'l4 * ';# ' f f ; i : j a < .
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2SA899
Abstract: 2SC1903 2SC1792 2sc1855 2-13B1A 2SC1815L 2SA1015L 2SC1840 2SA991 2sc1846
Contextual Info: - no Ta=25‘ C, *EfJíáTc=25‘ C} •WTX -a m -Çt -Él iè m VCBO Vc e o IC(DC Pc Pc* (V) (V) (A) (W) (W) IcBO (max) (a a ) VcB (V) ñ (min) hFE ft & (max) fé Vc e (V) (13=25^) ïc/ OHHàtypfc] (max) (V) I e (A) (V) le (A) Ib (A) 2SC1763 30MHz PA 65
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