2SC19 Search Results

2SC1955

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0S59MAX. g ja 4 5 M A X . FEATURES : Output Power : f=175MHz, Po=2.8W (Min. Vcc=13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR

2SC1913

Abstract: 2SC1913A
Contextual Info: Inchange Semiconductor Product Specification 2SC1913 2SC1913A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA913/913A ・Large collector power dissipation ・High VCEO APPLICATIONS ・Audio frequency high power driver

2SA771

Abstract: 2SA770 2SA7 2SC1985
Contextual Info: Inchange Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING

2SC1942

Contextual Info: Inchange Semiconductor Product Specification 2SC1942 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION

2SC1986

Abstract: 2SC1985
Contextual Info: Inchange Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING

2SA771

Abstract: 2SA770
Contextual Info: JMnic Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1985/1986 ・Low collector saturation voltage APPLICATIONS ・For general and industrial purpose applications PINNING PIN DESCRIPTION

2SC1942

Contextual Info: JMnic Product Specification 2SC1942 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA914

Abstract: 2SC1953
Contextual Info: Product Specification www.jmnic.com 2SA914 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1953 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency power pre-amplifier PINNING PIN DESCRIPTION

2SC1955

Abstract: toshiba Choke
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sh <DI S C R E T E /O P T O iòC DE 1 ^ 0 ^ 7 5 5 0 □□074b4 û J Ü7464- D y 2SC1955 SI LICO N NPN E P IT A X IA L P L A N A R TYPE I Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. g fa FEATURES • • . •

25X2

Abstract: 2SA770 2SA771 w506
Contextual Info: AOK AOK Semiconductor Product Specification 2SA770 2SA771 S ilicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complément to type 2SC1985/1986 • Low collector saturation voltage APPLICATIONS - /♦*. i * F o r g e n e ra l and in d u stria l

2SC1905

Abstract: ic5 321
Contextual Info: Power T ransistors 2SCl?QS H 2SC1905(H) Silicon PNP Triple-Diffused Planar Type Package’Dimensions Horizontal Deflection Driver for Color TV set Unit,! mm • Features • High collector-emitter voltage 1 0 .5 ± 0 .5 ( V ceo ) • Large collector power dissipation (Pc)

2SA914

Abstract: 2SC1953
Contextual Info: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC cu rre n t gain • High collector-em itter voltage V (Iife ceo ) • Low collector output capacitance (Cot)

BDY20

Abstract: BU208A BU608 2SD870 2S01168 2S0200 BDY38 BU208 2SC1942 2SD1168
Contextual Info: TO-3 Power Package Transistors NPN Max mum F atings Type No. V CBO V CEC V E0C (V) Min (V) Min (V) Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 800 Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) PD <W) t (A) @Tc=25° 'c a o (MA) V CB

2SC1980

Abstract: TRANSISTOR 2SC1980 2SA921
Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter

2SC1986

Abstract: 2SC1985
Contextual Info: SavantIC Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING

2SC1942

Contextual Info: SavantIC Semiconductor Product Specification 2SC1942 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION 1 Base

2SA913

Abstract: 2SA913A 2SC1913 IC03A 2sa913 r
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION •With TO-220 package ·Complement to type 2SC1913/1913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

2SC1986

Abstract: 2SA771
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA771 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= -80(V)(Min.) ·Complement to Type 2SC1986 APPLICATIONS ·Designed for audio and general purpose applications.

Contextual Info: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • . 5.1 M A X . Excellent hpg Linearity : hpE (2) = 25 (Min.) : V çe = 6V, Iç = 400mA

2SC1946A

Abstract: 2SC-1946A u3020 470q
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1946A N PN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1946A is a silicon NPN epitaxial planar type transistor de­ signed fo r RF power amplifiers on VHF band mobile radio applications. D im e n sio n s in m m FEATURES

2SC1970

Abstract: 2sc1970 transistor T-30 parameters S transistor NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7

2SA0914

Abstract: 2SC1953
Contextual Info: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage VCEO 150

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381