2SC1226 TRANSISTOR Search Results

2SC1226

Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
Contextual Info: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A

2SC1226

Abstract: 2SC1226A 699a 2SC1226 P 2SC1226 R
Contextual Info: SavantIC Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC1226

Abstract: 2SC1226A 699A 2sc12
Contextual Info: Inchange Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SA699

Abstract: 2SA699A
Contextual Info: Inchange Semiconductor Product Specification 2SA699 2SA699A Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1226/1226A APPLICATIONS ·Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector

2SA699

Abstract: 2SA699A TRANSISTOR+2Sa+699
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A DESCRIPTION •With TO-202 package ·Complement to type 2SC1226/1226A APPLICATIONS ·Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector

2SC1226

Abstract: C1226 2SA699 226A 2SA699A 2SC1226A 2SA699 H
Contextual Info: Power Transistors 2SC1226, 2SCI 226A 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W output in com plem entary pair with 2SA699, 2SA699A

2SA699

Abstract: 2SA699A 2SA699 Q
Contextual Info: JMnic Product Specification 2SA699 2SA699A Silicon PNP Power Transistors DESCRIPTION ・With TO-202 package ・Complement to type 2SC1226/1226A APPLICATIONS ・Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA699 Silicon PNP Transistors 99MAX + Features i ,3.20 ±0.2 DWith TO-202 package DComplement to type:2SC1226 • Absolute Maximum Ratings Tc=25

transistors 1U

Abstract: 2SA699 2SA699A
Contextual Info: AOK AOK Semiconductor P ro d u ct S pecification 2SA699 2S A 699A Silicon PNP Pow er Transistors DESCRIPTION • With T 0 2 0 2 package • Complement to type 2SC1226/1226A APPLICATIONS • Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1

TO202 package

Abstract: 2SC1226 2SC1226 data sheet hfe1 TO-202 Package
Contextual Info: Power Transistors www.jmnic.com 2SC1226 Silicon NPN Transistors BCE Features BCE ﹒With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 32 V VEBO ICP IC Emitter to base voltage

2SC1226

Abstract: 2SA699 2SA699A 2SC1226A
Contextual Info: Power Transistors 2SA699, 2SA699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dimensions Pow er Amplifier Com plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A • Feature • 5W output in com plem entary pair with 2SC1226, 2SC1226A Absolute Maxim um Ratings T a = 2 5 °C

2SA699

Abstract: 2SA699A 2SC1226A 2SA699 H 2SC1226 2SA699 Q
Contextual Info: Power Transistors 2SA 699, 2S A 699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dim ensions P ow er Am plifier C om plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A U n it 10.0 mm 0 .5 ± 0 .0 5 • Feature • 5W output in complementary pair with 2SC1226, 2SC1226A

3SK2411

Abstract: 2SC1215 3SK143 3SK22 3sk169 3SK247
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Appli­ Band cation TO-92 (D46) New S Type (D34) M Type (D35) 2SC1215 Package (No.) SS Mini Type S Mini Type S Mini Type (3 pin) (4 pin)

2SC632A

Abstract: 2SC1243 2SC1210 2SC1211 138B 2SA68 2SC1209 2SC1226 2SC631A 2sC1226 transistor
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

BU108

Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —

transistor MJ2501

Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc