226A Search Results

VND050

Abstract: vns0300
Contextual Info: li VND050 N-Channel Enhancement-Mode MOSFETs in c o rp o ra te d TYPE PACKAGE DEVICE Single TO-92 TO-226AA • VN50300L Single SOT-23 • VN50300T Single Chip • Available as VND01CHP TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive 'd

Contextual Info: NPA N-Channel JFETs C X 'S ilico n ix in c o rp o r a te d TYPE PACKAGE Single TO-92 TO-226AA • J201, J202 Single SOT-23 • SST201, SST202 Single TO-18 • 2N4338, 2N4339, 2N4340, 2N4341, VCR4N Single Chip • Available as NPA1CHP, NPA2CHR NPA3CHP, NPA4CHP

nd2410l

Contextual Info: ND2406L, ND2410L N-Channel Depletion-Mode MOS Transistors JBÜSKSS TO-92 TO-226AA PRODUCT SUMMARY T PART NUMBER V (BR)DSS ND2406L 240 6 0.23 ND2410L 240 10 0.18 BOTTOM VIEW >d (A) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VDDV24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

Current Regulator Diodes

Abstract: NIP1CHP
Contextual Info: M ID fT-Siliconix J .Æ * * 1• in c o rp o ra te d N-Channel JFET Current Regulator Diodes_ TYPE PACKAGE DEVICE Single TO-92 TO-226AA • Single SOT-23 • SST108, SST109, SST110 Single TO-52 (TO-206AC) • 2N5432, 2N5433, 2N5434 Single Chip

VN2410M

Abstract: VN2410L
Contextual Info: VN2410 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (Í1) (A) PACKAGE VN2410L 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 •d 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237

Contextual Info: TN1206L N-Channel Enhancement-Mode MOS Transistor m SSgA PRODUCT SUMMARY V BR DSS TO-92 (TO-226AA) •d “ST (A) 6 0.18 120 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: SeeVN D Q 12 I — ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

Contextual Info: Hmzzàz TN0601L N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA 'V V (BR)DSS 60 1.8 BOTTOM VIEW •d (A) 0.47 1 SOURCE 2 GATE Performance Curves: VNDQ06 3 DRAIN 3 il— L-n • - É ? i ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

tn2010l

Abstract: TN2010 TN201
Contextual Info: BW 5P& TN201 OL, TN241 OL N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V(BRJDSS PART NUMBER 'X ' •d (A) TN2010L 200 10 0.18 TN2410L 240 10 0.18 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

Contextual Info: LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors R1U50-600A SCRs 1 AMPERES RMS 600 VOLTS TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits TO-92 DIM. Blocking Voltage to 600 Volts

R1U50-600A

Contextual Info: LITE-ON SEMICONDUCTOR R1U50-600A SCRs 1 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 600 Volts

97A8

Abstract: 08Amp
Contextual Info: LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors 97A8 TRIACs 0.8AMPERES RMS 600 VOLTS TO-92 TO-226AA FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger

Contextual Info: VN2010L N-Channel Enhancement-Mode MOS Transistor JTtSgft PRODUCT SUMMARY V BR DSS (V) 200 Performance Curves: TO-92 (TO-226AA) T •d (A) 10 0.19 VNDQ20 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN 3 .1— Ln ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

Contextual Info: TELEDYNE COMPONENTS 5ñE D • aW bOH . QOat.4aM O T-29 -25 SD1202 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS FETs ORDERING INFORMATION Sorted Chips In Waffle Pack TO-226AA TO-92 Package

JR 3610

Abstract: RT 083 206af 44464
Contextual Info: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package

Contextual Info: LITE-ON SEMICONDUCTOR T08M3F-A SERIES TRIACs 0.8 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 TO-226AA TO-92 (TO-226AA) FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes

Contextual Info: LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors S08-A SERIES SCRs 0.8 AMPERES RMS 600 VOLTS TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits TO-92 DIM. Blocking Voltage to 600 Volts

Contextual Info: LITE-ON SEMICONDUCTOR S08-A SERIES SCRs 0.8 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 600 Volts

T1M5F600A

Abstract: T1M5F-600A T1M5F400A t1m5f t 04 80 t1m5f-600
Contextual Info: LITE-ON SEMICONDUCTOR T1M5F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 TO-226AA FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes

Contextual Info: LITE-ON SEMICONDUCTOR T1M5F800A TRIACs 1.0 AMPERES RMS 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 TO-226AA TO-92 FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 800 Volts Sensitive Gate Triggering in Four Trigger Modes

t1m5f

Contextual Info: LITE-ON SEMICONDUCTOR T1M5F800A and AR TRIACs 1.0 AMPERES RMS 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 TO-92 TO-226AA (TO-226AA) FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 800 Volts Sensitive Gate Triggering in Four Trigger Modes

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

GS8550T

Contextual Info: GS8550T Small Signal Transistors PNP TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) t c u rod P New Features min. 0.492 (12.5) 0.181 (4.6) • PNP Silicon Epitaxial Planar Transistors for amplifier applications. Especially suitable for low power output stages such as portable radios in class-B push-pull

bs250

Contextual Info: BS250 DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway

Contextual Info: MPSA56 Small Signal Transistor PNP t c u rod P New TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor