2SA923 Search Results

Contextual Info: 2SA923-2 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)175 V(BR)CBO (V)200 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SA960

Abstract: 2sa910 2SA931 2SC1845 equivalent 2SA902 2sa979 2SA906 2SA978 2SC1586 2sa939
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Electrical characteristics (Ta=25ºC) Pc (mA) (mW) 2SA901 -40 -5 -100 200 2SA902 2SA903 -50 -50 -5 -100 -5 -100 200 200 2SA904 -90 -5 -50 200 -120 -120 -5 -5 -50 -50 200 800 200 2SA904A 2SA905

transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .

2SC834

Abstract: 2sc879 2SC869 2SC882 2SC871 2SC880 2SC895 2SC897 2SC869 DATASHEET 2SC856
Contextual Info: Electrical characteristics Ta=25ºC DC Current Gain Tj fab/ft* Cob ºñ°í hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Absolutes maximum ratings (Ta=25ºC) PartNumber VCBO VEBO Ic (V) 2SC801 (V) Pc (mA) (mW) 75 5 500 2SC802 2SC803 2SC804 2SC805 2SC805A 60 60 15

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905