BC39 Search Results

BC394

Contextual Info: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

Contextual Info: 3DE D f Z 7 ^ 7 # • S G 7^237 S - T H O s M 0030^01 fi ■ S O N fL K g T F lO K i B C 3 9 3 S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTIO N The BC393 is a silicon planar epitaxial PNP trans­ istor in Jedec TO-18 metal case, designed for ge­ neral purpose high-voltage and video amplifier ap­

Contextual Info: 3DE » • 7^237 □QBÜ'iaS S ■ T i• V°| / r : SCS-THOM SON ^_ 7# 5 C L l ^ g « S _ B C 3 9 4 S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon planar epitaxial NPN trans­

SPHE6300

Abstract: ELCO-CON24 CDVR R166 mitsumi C30 BC28 BBC30 2SK3018 mitsumi c23 BC13
Contextual Info: 5 4 A+5V RF3.3V + EC1 + 10U16V EC12 47U16V RFGND BC32 BC39 BC36 BC13 0.1U 0.1U 0.1U 0.1U 3 XOPVIP1 XOPVIN1 X O POP1 RFGND D XOPVIP1 XOPVIN1 X O P OP1 2 1 5 5 2,5 D A+5V R164 EC6 + 10 R165 SANYO 47U16V R166 NC R167 RF3.3V NC SAMSUNG NC NC MITSUMI NC NC C27

2n6218

Abstract: 2sC 4927 393P BC285 BC532 C 4927 triac mw 137 BC394 BC530 BC533
Contextual Info: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High Voltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18

BC393

Contextual Info: BC393 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 180V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

BC236

Abstract: BF305 BCW50 BC285 BF137 BF298 BF299 BC312 BCW5 BCX30
Contextual Info: NO. v 'c Cob V CE SAT Tl X M A X IM U M R A T IN G S CEO Pd (mW) 'c m • Im A I (V ) min max BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 T O -18 TO-39 T O -18 TO-18 300 360 800 400 400 50 100 150 100 100 120 120 100 180 180 25 30 50 50 30 200 BC450 BC530

BC394

Abstract: BC393
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BC393 PNP BC394 NPN TO-18 Metal Can Package High Voltage Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL

Contextual Info: BC393 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 180V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

Contextual Info: BC394 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 160V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BC393 PNP BC394 NPN TO-18 Metal Can Package High Voltage Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL

BC394

Abstract: BC393
Contextual Info: PNP SILICON PLANAR EPITAXIAL TRANSISTOR IV 1 IC 3 R C D E L - E C S T F R O IM IC IÎS CASE TO-18 BC393 is a PNP silicon planar epitaxial transistor designed for general purpose high voltage and video amplifier appli­ cations. It is complementary to the NPN

BC394

Abstract: BC394CSM
Contextual Info: BC394CSM HIGH VOLTAGE NPN AMPLIFIER TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 • HERMETIC CERAMIC SURFACE MOUNT

BC394

Contextual Info: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. c u d TO-18 e t le s t o r

BF297

Abstract: bf391 t BF179 bf305
Contextual Info: High Voltage Transistors H Fe M A X IM U M R A T IN G S TY PE NO. BC285 BC312 BC393 BC394 BC450 BC530 BC531 BC532 BC533 BCW50 PO LA ­ CASE VcEO m W IcM* (m A ) VcER* (V ) 360 800 400 400 350 100 150 100 100 200 120 100 180 180 100 30 50 50 30 50 TO-92A

Contextual Info: ae PNP SILICON PLANAR EPITAXIAL TRANSISTOR ÏN /1 IC 3 R O E L -E C T F R IU IM IC IS S CASE TO-18 BC393 is a PNP silicon planar epitaxial transistor designed for general purpose high voltage and video amplifier app l i ­ cations. It is complementary to the NPN

BC394

Contextual Info: BC394 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 160V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

BF174

Abstract: BF336 BF178 BC-530 BF117 BF338 bf391 t bc285 b*137 BFI79
Contextual Info: High Voltage Transistors T Y PE P O L A ­ NO . R IT Y C A SE BC285 BC312 BC393 BC394 BC450 N N P N P M A X IM U M R A T IN G S ^CEO Pi Ic Ic.Yl* ^CER* m W (m A) (V) H FE fT VcE(sat) min m ax Ic (m A) VfE (V) m ax (V) Ic (m A ) m in (M H z) m ax (M H z)

BC394

Contextual Info: BC394 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 160V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

Contextual Info: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

AH40

Abstract: AW33 AA41 BC35 EPF8050M
Contextual Info: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features Data Sheet • Prelim inary Information ■ ■ ■ ■ Architecture Description Ideal for ASIC prototyping Combination of four EPF81188 devices and one Field Programmable Interconnect FPIC device

T9550

Abstract: intel p8400 p8600 P9700 diode AH44 320-122 T9900 X9100 CXE DIODE micro switch lie n41
Contextual Info: Intel Core 2 Duo Mobile Processor, Intel® Core™2 Solo Mobile Processor and Intel® Core™2 Extreme Mobile Processor on 45-nm Process Datasheet For platforms based on Mobile Intel® 4 Series Express Chipset Family March 2009 Document Number: 320120-004