2SC1070 Search Results

2SC1070

Abstract: 9011 npn
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION 2 S C 1 0 7 0 B The 2SC1070(B) is specifically designed for UHF RF amplifier applications. The 2SC1070(B) features high PACKAGE DIMENSIONS power gain, low noise, and excellent forward AGC in m illim e te rs (inches)

Contextual Info: 2SC1070 2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)

2SC107

Abstract: 2SC1070
Contextual Info: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE DESCRIPTION 2SC1070 1 , 2SC1070(2) The 2SC1070(1) is specifically designed for UHF RF amplifier applications. The 2SC1070(2> is specifically designed fo r UHF mixer applications. They feature high power gain, low noise

2SC1070

Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low

2sc710

Abstract: 2sc1741 2SC366 2SC380 2sc944 2sC1674 2SC4641 2SC1815 2SC3393 2SC931
Contextual Info: - m € Type No. SANYO 2SC4641 S RH* •$. SIS* B t z i - H i ä drÜ 2SC3393 2SC3393 2SC4455 917 918 920 H 15 2SC2839 2SC 921 * 2SC 922 f 2SC 923 b B B B V m w. m. S «E -— 2SC2999 2SC2999 2SC4641 = H H * ;¥ # = = H ;¥ m n * 2SC 931 • 2SC 932 ^ 2SC 933 f-

2sc2888

Abstract: 2SC2926 2SC2166 2sc1047 2sc1907 2SC387A 2SD1270 2Sd917 2SC787 2sc2314
Contextual Info: - 96 - sa € * * * * * * Type No. 2SC 740 2SC 7 412SC 742 2SC 743 2SC 745 2SC 746 2SC 748 * 2SC 749 * 2SC 751 2SC 752 * 2SC 753 * 2SC 754 * 2SC 755 * 2SC 756A a € Manuf. z m SANYO # z m Z «±ii t±M «±S 2SC2183 S drài 2SC2999 2SC4455 s 0 s V — —

2SC2804

Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
Contextual Info: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787

2sc380

Abstract: 2SC2320 2SC828 2SC547 2SC2894 2sc710 2SC783 2SC1626 2SD315 2SC839F
Contextual Info: - 98 - s± s * 2SC 814 * 2SC 815 ^ * 2SC 816 * 2SC 817 T OOP 010 * 2SC 819 * * 2SC 822 2SC 823 820 821 „- 825 s± a 826 s±a *±a ^ 2SC 828 — • 2SC 828A 2SC 829 ♦ 2SC 830 * 2SC 831 * 2SC ^ 836 * 2SC 837 ✓ * 2SC 838 - * 2SC 839 * * 2SC 840 * 2SC 840A

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

bf223

Abstract: PE210C BF311 PE210B 2SC1293 bfy88 BF330 nec RF package SOT89 2SC1260 BF497
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293

2SC 143 SANYO

Abstract: nec 2651 2SC2283 2sc2317 2SC2570A 2SC1730 2sc2644 2SC2389 2SC2101 2SC2627
Contextual Info: - m % tt € Manuf. Type No. & H. SANYO 2SC 2627 / ~ 2SC 2828 " 2SC 2629 *<-• » M. Q TOSHIBA NEC 2SC2101 2SC2281 2SC2102 2SC2282 i HITACHI Sä ± il FUJITSU fé T MATSUSHITA z m MITSUBISHI * 2SC2420 2SC 2630 ^ H m 2SC2782 2SC 263 1 ta T 2SC2909 2SC 2632

sc 1046

Abstract: 2SD350 2SC 1026 2SC1957 mitsubishi 2sc 1018 2sc943 2SD226A 2SC2036 2SD371 2SC763
Contextual Info: - 104 - m « Type No. tt € Manuf. * 2SC 1014 * 2SC 1015 — • z * 2SC 1016 * 2SC 1017 ^ * * 2SC 1018— ^ h 2SC 1021 z * 2SC 1022 = * * 2SC 1023 * 2SC 1025 * * * 2SC 1026 = .E ^ £ SANYO 2SD612 m m IC TOSHIBA HITACHI ÍL 2SC790 2SC998 2SC2221 2SC2036 s

NEC 2706

Abstract: 2SC1815 2SC2283 KA 2717 2SC1971 2SD810 2SC3359 nec 2741 2SC2645 2SC3012
Contextual Info: - m. % Type No. 2SC 2706 / 2SC 2SC 2SC 2SC 2SC 2 SC 2SC 2SC 2SC 2710 ^ 2711 2712" 2713 " 2714 _ 27 15 " 2716 — 2717 y 2718 « Manuf. = b $ SANYO TOSHIBA 2SC3182N M 'S . 2SD1047 % 3Ê 2SD1935 m NEC 2SC3012 2SC4639 2SD810 2SC2281 2SC1623 K 2SC2814 2SC2814

2SC827

Abstract: 2SC945L 2SC1030 2SC923 2SC1044 2sc1090 2SC915 2SC914 2SC850 2SC829
Contextual Info: - 100 - n Ta=25‘ C , *EPtéTc=25£C i± 2SC827 £ MS SW/LF A Vç r o VcEO IcCDC) Pc Pc* (V) (V) (A) (W) (W) I.CBO. (wax) lu A) Vcb (V) n . hF E (min) & w (Ta=25tC ) ^ (max; Ic / ÏE (A) VCE (V) (V) 5 0. 002 0.05 2SC828A fâT A 45 45 0.05 0.4 130 520 5

2sd4242

Abstract: 2SD424 TOSHIBA 2SD424 181v 2SC387A toshiba 2sd424 2SC2320 2SC2078 2SC641 sc 1815
Contextual Info: - £ m * * * 2SC 1780 2SC 1781 H 2SC 1782^ * 2SC 1783 2SC 1784 2SC * 2SC * 2SC * 2SC 1785^ 1786 " 1787 1788 - * 2SC 1788A 2SC 1789 *, * 2SC 1790 * 2SC 1791 * 2SC 1792 % 2SG 1801 * 2SC 1802 2SC * 2SC * 2SC * 2SC * 2SC 2SC * 2SC * 2SC * 2SC * € = 1803 1804

2sc1093

Abstract: 2SC1026 2SC1015 2SC1091 2SC1093 equivalent 2SC1015 equivalent 2SC1018 2sc1027 2SC1020 2SC1003
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc 40 4 500 2SC1002 36 4 1A 2SC1003 36 4 2A 2SC1004 1100 5 500 2SC1004A 1500 5 500 2SC1005 1100 5 5A 2SC1005A 1400 5 5A 2SC1006 2SC1007 2SC1008 2SC1008A 2SC1009 2SC1010 50 60 80 100 50 50

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

MRF472

Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293