2SC332 Search Results

2SC3322

Contextual Info: Inchange Semiconductor Product Specification 2SC3322 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・High voltage ・High speed APPLICATIONS ・High power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

npn ic 400ma

Abstract: 2SC3325
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3325 Unit in mm A U DIO FREQUENCY LOW POWER A MPLIFIER APPLICATIONS. + Q5 2.5 —U 3 DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. FEATURES: . Excellent hpE Linearity : h p g 2 = 2 5 ( M i n .) at . High Voltage

2SC3324

Abstract: 2SA1312
Contextual Info: 2SC3324 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3324 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 • 電流増幅率が高い。 : hFE = 200~700

2SC3325

Abstract: 2SA1313
Contextual Info: 2SC3325 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3325 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 • 単位: mm 直流電流増幅率の電流依存性が優れています。 : hFE (2) = 25 (最小) (VCE = 6 V, IC = 400 mA)

2SC3326

Contextual Info: 2SC3326 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3326 ○ ミューティング用 ○ スイッチング用 単位: mm • エミッタ･ベース間電圧が大きい。 : VEBO = 25 V (最大) • Reverse hFE が大きい。

2SC3322

Contextual Info: SavantIC Semiconductor Product Specification 2SC3322 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·High voltage ·High speed APPLICATIONS ·High power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: T O SH IB A 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 1çC 337Q Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS 5.1 M AX. • Very Low Noise in the Region of Low Signal Source Impedance

Contextual Info: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)

marking ACY

Abstract: marking ACY SOT-23 transistor ACY PNP 2SA1313 2SC3325 aco transistor acy transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1313 SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. z High Voltage :VCEO=-50V(Min) z Complements the 2SC3325.

Contextual Info: Reliability Tests Report Product Name: 2SC3324 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC3322

Contextual Info: HITACHI 2SC3322 SILIC O N NPN T R IP L E D IFFU S E D HIGH V O LTA G E, HIGH S P E E D AND HIGH P O W E R SW IT C H IN G ]- uaic 2. Colleclor Fiadgc 1- Ilm iitcr ( D im e n s io n s in m m ) n p ¡(S±oii<Tii! (TO-3P) M AXIM UM C O L L E C T O R D ISSIP A T IO N

2SC3326

Contextual Info: TOSHIBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS + 0.5 High Emitter-BaseVoltage : Ve b O ~ 25V (Min.) High Reverse hjrg : Reverse hjrg = 150 (Typ.) (VCE= —2V, IC = —4mA)

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability TO-3P *Pb-free plating product number:2SC3320L ORDERING INFORMATION Order Number Normal

2SC3329

Abstract: 2SA1316
Contextual Info: TOSHIBA 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3329 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS AND RECOM M ENDED FOR THE FIRST STAGES OF MC HEAD AM PLIFIERS . 5.1 MAX. • Very Low Noise in the Region of Low Signal Source Impedance

c3328

Abstract: C3328 NPN Transistor 2SC3328 2SA1315
Contextual Info: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •

c3328

Abstract: 2SC3328 2SA1315
Contextual Info: 2SC3328 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3328 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)

2SC3327

Abstract: 2SC3327 S
Contextual Info: 2SC3327 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3327 ○ ミューティング用 ○ スイッチング用 単位: mm • エミッタ･ベース間電圧が大きい。 : VEBO = 25 V (最大) • Reverse hFE が大きい。

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. FEATURES: . High Emitter-Base Voltage : VggQ=25V Min. . High Reverse hpg : Reverse hpg=150(Typ.) (Vçjr=-2V, Iç=-2mA) . Low on Resistance : Rofj=lfi (Typ.) (Ib =5uiA) . High DC Current Gain : hpj;= 200 "1200

2sc3320l

Abstract: 2sc3320 transistor 2sc3320 QW-R214-008
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING „ FEATURES * High voltage, high speed switching * High reliability 1 TO-3P „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC3320L-x-T3P-T

marking CBG

Abstract: 2SC3324 NF 05
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC3324 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High voltageVCEO=120V 0.4 3 1 Low noise. 0.55 High hFE.hFE=200 to 700 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SC3368

Abstract: 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331
Contextual Info: - 154 - Ta=25t . *EP(äTc=25iC) 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 2SC3330 2SC3331 2SC3332 2SC3333 2SC3334 2SC3336 2SC3337 2SC3338 2SC3342 2SC3345 2SC3346 2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355 2SC3356 2SC3357 2SC3358 2SC3360

KA 3264

Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
Contextual Info: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A

2SC3322

Contextual Info: 2SC3322 Silicon NPN Tirple Diffused HITACHI Application High voltage, high speed and high power switching Outline TO -3P 1 Base 2 Collector R ange 3 Emitter Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit C ollector to base voltage ^C B Q

ea46

Abstract: 2SC3320
Contextual Info: 2SC3320 NPN = xmi±, TRIPLE D IFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING * Outline Drawings Features • f t iiJE , # High voltage, high speed switching • High reliability : Applications • Sw itching regulators • 1 : Base Ultrasonic generators