2SA1313 Search Results

marking ACY

Abstract: marking ACY SOT-23 transistor ACY PNP 2SA1313 2SC3325 aco transistor acy transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1313 SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. z High Voltage :VCEO=-50V(Min) z Complements the 2SC3325.

2SA1313

Abstract: 2SC3325 2sA13133
Contextual Info: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

Contextual Info: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1313

Abstract: 2SC3325
Contextual Info: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1313

Abstract: 2SC3325
Contextual Info: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

Contextual Info: TO SHIBA 2SA1313 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 313 A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS U nit in mm DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 2 .5 -0 .3 SW ITCHING APPLICATIONS • + 0 .2 5 .1 .5 -0 .1 5

2SA1313

Abstract: 2SC3325
Contextual Info: TO SHIBA 2SA1313 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 313 A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SW ITCHING APPLICATIONS • Excellent hEE Linearity : ^FE (2) —25 (Min.) at VqE = —6V, Iq = —400mA

IC Marking AC 6

Abstract: 2SA1313
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1313 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Small package 1 0.55 High voltage: VCEO = -50 V min +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

Contextual Info: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

Contextual Info: 2SA1313 SILICON PNP EPITAXIAL TYPE AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. Unit in mm + CL5 & 5 -Q 3 + 0.2 5 DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. i.5-ai 5 EE- FEATURES: . Excellent hpg Linearity : hj?g 2 = 25(Min.) at V c e =-6V. Ic=-400mA

2SA1313

Abstract: 2SC3325
Contextual Info: 2SA1313 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1313 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 • 単位: mm 電流増幅率の電流依存性が優れています。 : hFE (2) = 25 (最小) (VCE = −6 V, IC = −400 mA)

Transistor A131

Abstract: 2SA1313 2SC3325 A131
Contextual Info: 2SA1313 TO SH IBA 2 S A 1 313 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 2 .5 -0 .3 + 0.25 SWITCHING APPLICATIONS k 1-5 - ° - 15>i • •

Contextual Info: TOSHIBA 2SA1313 TOSHIBA TRANSISTOR K SILICON PNP EPITAXIAL TYPE PCT PROCESS WÊÊF A m m n • m tr n ■ v AUDIO FREQUENCY LO W PO W ER AM PLIFIER APPLICATIONS U nit in mm DRIVER STAGE AM PLIFIER APPLICATIONS +0.5 2 5-0.3 SWITCHING APPLICATIONS • + 0.25

Contextual Info: Product specification 2SA1313 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Small package 1 0.55 High voltage: VCEO = -50 V min +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

marking ACY

Abstract: transistor ACY PNP acy transistor marking ACY SOT-23
Contextual Info: 2SA1313 SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features — — — Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) Complements the 2SC3325. 2.80 1.60 0.15 1.90 MARKING : ACO,ACY

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SC3325

Abstract: 2SA1313
Contextual Info: 2SC3325 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3325 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 • 単位: mm 直流電流増幅率の電流依存性が優れています。 : hFE (2) = 25 (最小) (VCE = 6 V, IC = 400 mA)

Contextual Info: DUAL LOW VOLTAGE POWER AMPLIFIER NJM2096 The NJM2096 is a dual power amplifier, which operates with l.OV minimum supply voltage. The NJM2096 is suitable to small radio and head-phone stereo. The NJM2096 is resemble to the NJM2076, but two amplifiers are the same.

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction