2SB874 Search Results

Contextual Info: 2SB874 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD1177 Outline T0-220AB 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 2 5 ° C ) Item Symbol Rating Unit Collector to base voltage

Contextual Info: 2SD1177 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB874 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO 100

Contextual Info: 2SD1177 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB874 Outline T O -2 2 0 A B 2 O 1 1. Base 2. Collector Flange 3. Emitter O - —VA— —WV2 k£2 2 0 0 Si (Typ) (Typ) ì\' 2SD1177 Absolute Maximum Ratings (Ta = 25 °C)

STB60

Contextual Info: 2SB874 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD1177 Outline TO-220AB 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25 °C) Item Symbo Rating Unit Collector to base voltage

2SD1177

Abstract: Hitachi DSA00164
Contextual Info: 2SD1177 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB874 Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 2 kΩ (Typ) 200 Ω (Typ) 3 2SD1177 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

2SD1177

Abstract: 2SB874
Contextual Info: HITACHI 2SB874-SILICON PNP EPITAXIAL LOW PRiGUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1177 1. E m itte r 2. C ollector 3. Base D im e nìi« !« in mm 2-3±0,3 (JEDEC TO-126 MOD.) MAXIMUM COLLECTOR DISSIPATION CURVE I ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: HITACHI 2 S D 1 1 7 7 SILICON NPN EPITAXIAL LOW FR EQ U EN C Y POW ER A M P L If 1ER CO M PLEM ENTARY PAIR W ITH 2SB874 3¡1H 1. ¿outlet 2. CoUcckm: i. Bas* (D itiK U iK m i‘,\ tu m i 2.3103 (JEDEC TO-126 MOD I AB S O LU TE M A XIM U M RATINGS (Ta=25sC)

Contextual Info: 2SD1177 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB874 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O

2sb874

Abstract: Hitachi DSA001650
Contextual Info: 2SB874 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1177 Outline TO-220AB 1 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO

2SB874

Abstract: 2SD1177
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB874 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1.5A ·Complement to Type 2SD1177

Contextual Info: 2SB874 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD1177 Outline TO -220AB 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage

Contextual Info: HITACHI 2SB874SILICON PNP EPITAXIAL LOW PREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1177 Öïf*t I. Ermite* 2 Collecte* 3. B*se {Dimernkjo* in *m»> JEDEC TO-126 MOD. • ABSOLUTE MAXIMUM RATINGS (Ta=25“C) Item Collector to base voltage Collector to emitter voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

8893 single chip tv processor

Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Contextual Info: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

2N640S

Abstract: B0636 B081S 2SA1241Y 2SA1241-Y B0378 B0526-5
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SK3267 2SB1201 2SA1241Y SMl3550 SMl3553 SMl3576 SMl3579 SMl69502 SMl69510 ~UI 25 30 35 40 RQRr,'} SMl69610 SMl3502 SMl3506 SMl3510 SMl3514 2N2881 2N320S SOT3553 SOT3553 SOT3553 B0378 B0378 B0378 B0636

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2sk408

Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
Contextual Info: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~