STB60 Search Results

STB60NE06L-16

Contextual Info: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY

STB60NF03L

Contextual Info: STB60NF03L N-CHANNEL 30V - 0.008Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF03L • ■ VDSS RDS on ID 30 V < 0.01 Ω 60 A TYPICAL RDS(on) = 0.008 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

b60nf06

Abstract: B60NF JESD97 STB60NF06 STB60NF06-1 STB60NF06T4 diode k 0368
Contextual Info: STB60NF06 STB60NF06-1 N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06-1 60V <0.016Ω 60A STB60NF06 60V <0.016Ω 60 3 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

B60NE06L

Abstract: B60NE06L-16 b60ne
Contextual Info: STB60NE06L-16  N - CHANNEL 60V - 0.014 Ω - 60A - D2PAK ”SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST B60NE06L-16 60 V <0.016 Ω 60 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCE RUGGED TECHNOLOGY

Contextual Info: STB60NE06L-16 N - CHANNEL 60V - 0.014 £2 - 60A - D^PAK "SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S T B 6 0 N E 0 6 L -1 6 60 V < 0 .0 1 6 Q. 60 A . . TYPICAL Ros(on) =0.014 £2 AVALANCE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

Contextual Info: STB60NF03L N-CHANNEL 30V - 0.008 Q. - 60A D2PAK _ STripFET POWER MOSFET PRELIMINARY DATA TYP E S TB60N F03L V d ss R dS oii Id 30 V < 0.01 Q. 60 A • TYPICAL R D S (on) = 0.008 . OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS . LOW THRESHOLD DRIVE

Contextual Info: SGS-THOMSON ÍIJCTIMfflO STB60N06-14 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V STB60N06-14 dss 60 V Id R D S o n < 0.014 n 60 A TYPICAL R DS(on) =0.012 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

STB6000

Abstract: stv0299 application STV0299 QFN-32 bpsk QFN32Pin ST omega
Contextual Info: STB6000 QPSK DVB/DIRECTVTM direct conversion tuner IC DATA BRIEF Description satellite front end that can seamlessly interface to ST’s OMEGA range of set-top box decoders. Packaged in a small QFN 32-pin package, it is ideal for low cost DBS design. The STB6000 ASIC is a highly integrated, low

STB60NE06L-16

Contextual Info: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY

STB60NE03L-12

Contextual Info: STB60NE03L-12 N-CHANNEL 30V - 0.009 Ω - 60A D2PAK STripFET POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS R DS on ID STB60NE03L-12 30 V <0.012 Ω 60 A TYPICAL RDS(on) = 0.009 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

b60ne

Abstract: B60NE06L STB60NE06L-16T4 B60NE06
Contextual Info: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature

Contextual Info: SANGDEST MICROELECTRONICS STB60100C-A Technical Data Data Sheet N1620, Rev. - Green Products STB60100C-A SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • •

B60NE06L

Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4
Contextual Info: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature

60N55F3

Contextual Info: STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ

STB60NF03L

Contextual Info: STB60NF03L  N-CHANNEL 30V - 0.008 Ω - 60A D2PAK STripFET POWER MOSFET PRELIMINARY DATA T YPE STB60NF03L • ■ ■ ■ V DSS R DS on ID 30 V < 0.01 Ω 60 A TYPICAL RDS(on) = 0.008 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW THRESHOLD DRIVE

60N55F3

Abstract: STI60N55F3 STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 60N55
Contextual Info: STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ

B60N03

Abstract: B60N03L-10 STB60 D2PACK STB60N03L-10
Contextual Info: STB60N03L-10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMIRARY DATA TYPE V DSS R DS on ID ST B60N03L-10 30 V < 0.01 Ω 60 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

B60N06

Abstract: DD 127 D TRANSISTOR b60n06-14 D2PACK transistor DD 127 D STB60N06-14
Contextual Info: STB60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.014 Ω 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

320 5400

Abstract: STB60NE03L-10 b60ne airbag
Contextual Info: STB60NE03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST B60NE03L-10 30 V < 0.010 Ω 60 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.007 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC

STB60NE03L-10

Contextual Info: STB60NE03L-10 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS on ID STB60NE03L-10 30 V < 0.010 Ω 60 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.007 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC

STB60N55F3

Abstract: STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 275 L20
Contextual Info: STB60N55F3 - STD60N55F3 - STF60N55F3 STP60N55F3 - STU60N55F3 N-channel 55V - 6.5mΩ - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET Power MOSFET General features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ 80A 110W

DD 127 D TRANSISTOR

Abstract: STB60N06-14 D2PACK STB60N06
Contextual Info: STB60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.014 Ω 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STB60

Contextual Info: STB60NE06L-16  N - CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE V DSS R DS on ID STB60NE06L-16 60 V < 0.16 Ω 60 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY

schematic diagram 48v UPS

Abstract: schematic diagram 24v UPS schematic diagram 48V telecom ups STB60NF06
Contextual Info: STB60NF06 N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF06 • ■ ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION