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Dinkle Enterprises DKB60NE End Cover
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DKB60NE	Bulk			1	1 $1.35 10 $1.01 100 $0.74 1000 $0.74 10000 $0.74	Buy Now
STMicroelectronics STB60NE06L-16T4 MOSFET N-CH 60V 60A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STB60NE06L-16T4	Tape & Reel			1,000	1 - 10 - 100 - 1000 $1.31 10000 $1.25	Buy Now
Vyrian	STB60NE06L-16T4		2,829			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STB60NE06L16T4 N-CHANNEL 60V-0.014 OHM-60A-D2PAK STRIPFET II POWER MOSFET Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	STB60NE06L16T4		7,710			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics B60NE03L10 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	B60NE03L10		230			1 - 10 - 100 - 1000 - 10000 -	Get Quote

B60NE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
B60NE06L Abstract: B60NE06L-16 b60ne Contextual Info: B60NE06L-16  N - CHANNEL 60V - 0.014 Ω - 60A - D2PAK ”SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST B60NE06L-16 60 V <0.016 Ω 60 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCE RUGGED TECHNOLOGY	Original	STB60NE06L-16 B60NE06L-16 175oC O-263 B60NE06L B60NE06L-16 b60ne	PDF
320 5400 Abstract: STB60NE03L-10 b60ne airbag Contextual Info: B60NE03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST B60NE03L-10 30 V < 0.010 Ω 60 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.007 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC	Original	STB60NE03L-10 B60NE03L-10 O-263 320 5400 STB60NE03L-10 b60ne airbag	PDF
b60ne Abstract: B60NE06L STB60NE06L-16T4 B60NE06 Contextual Info: B60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID B60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature	Original	STB60NE06L-16 STB60NE06L-16T4erein b60ne B60NE06L STB60NE06L-16T4 B60NE06	PDF
B60NE06L Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4 Contextual Info: B60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID B60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature	Original	STB60NE06L-16 B60NE06L b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4	PDF
b60ne Abstract: B60NE06L Contextual Info: B60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID B60NE06L-16 60V <0.016Ω 60A ) s ( t c u d o ) r s ( P t c e t u Description e d l o o r s P b Internal schematic diagram e O t e l )	Original	STB60NE06L-16 STB60NE06L-16 b60ne B60NE06L	PDF