B60NE06L
Abstract: B60NE06L-16 b60ne
Contextual Info: B60NE06L-16 N - CHANNEL 60V - 0.014 Ω - 60A - D2PAK ”SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST B60NE06L-16 60 V <0.016 Ω 60 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCE RUGGED TECHNOLOGY
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STB60NE06L-16
B60NE06L-16
175oC
O-263
B60NE06L
B60NE06L-16
b60ne
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b60ne
Abstract: B60NE06L STB60NE06L-16T4 B60NE06
Contextual Info: B60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID B60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature
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STB60NE06L-16
STB60NE06L-16T4erein
b60ne
B60NE06L
STB60NE06L-16T4
B60NE06
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B60NE06L
Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4
Contextual Info: B60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID B60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature
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Original
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STB60NE06L-16
B60NE06L
b60ne
JESD97
STB60NE06L-16
STB60NE06L-16T4
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PDF
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b60ne
Abstract: B60NE06L
Contextual Info: B60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID B60NE06L-16 60V <0.016Ω 60A ) s ( t c u d o ) r s ( P t c e t u Description e d l o o r s P b Internal schematic diagram e O t e l )
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STB60NE06L-16
STB60NE06L-16
b60ne
B60NE06L
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