B60N06 Search Results

B60N06

Abstract: DD 127 D TRANSISTOR b60n06-14 D2PACK transistor DD 127 D STB60N06-14
Contextual Info: B60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.014 Ω 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

bma 023

Abstract: SUB60N06-14 SUP60N06-14
Contextual Info: T e m ic SUP/B60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) ( ß ) 60 0.014 : I d (A) 60a T0-220AB o TO-263 o D R A IN con n ected to TAB n G D S Top View GD Ò S S SU B60N06-14

L9380

Abstract: L9380-TR SO20 U405
Contextual Info: L9380 Triple high-side MOSFET driver Features • Overvoltage charge pump shut off ■ For VS > 25 V ■ Reverse battery protection referring to the application circuit diagram ■ Programmable overload protection function for channel 1 and 2 ■ Open ground protection function for channel 1

B60N06

Abstract: b60 n06 MTB60N06J3 N06 MOSFET
Contextual Info: CYStech Electronics Corp. Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET B60N06J3 BVDSS 60V ID 12A RDSON MAX 60mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package

L9380

Abstract: L9380-TR SO20 L9380-TR-LF B60N06
Contextual Info: L9380 Triple high-side MOSFET driver Features • Overvoltage charge pump shut off ■ For VS > 25 V ■ Reverse battery protection referring to the application circuit diagram ■ Programmable overload protection function for channel 1 and 2 ■ Open ground protection function for channel 1

B60N06

Abstract: L9380 SO20 charge pump mosfet driver external
Contextual Info: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • ■ ■ ■ ■ ■ OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION

L9380

Abstract: SO20 voltage comparator IC 5 pin B60N06
Contextual Info: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION FOR CHANNEL 1 AND 2

B60N06

Abstract: SMB7W01-200
Contextual Info: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • ■ ■ ■ ■ ■ OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION

Contextual Info: L9380 Triple high-side MOSFET driver Features • Overvoltage charge pump shut off ■ For VS > 25 V ■ Reverse battery protection referring to the application circuit diagram ■ Programmable overload protection function for channel 1 and 2 ■ Open ground protection function for channel 1

Contextual Info: L9380 Triple high-side MOSFET driver Features • Overvoltage charge pump shut off ■ For VS > 25 V ■ Reverse battery protection referring to the application circuit diagram ■ Programmable overload protection function for channel 1 and 2 ■ Open ground protection function for channel 1

B60N06

Abstract: L9380 SO20
Contextual Info: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION FOR CHANNEL 1 AND 2