2SA1062 Search Results

2SA1062

Abstract: 2SC2486
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1062 S ilicon PNP Power Transistors D ES C R IP TIO N • W ith TO -3PN package • C om plem ent to type 2SC 2486 • High collector pow er dissipation A P P LIC A T IO N S • High pow er audio frequency am plifier

2SA1062

Abstract: 2SC2486
Contextual Info: JMnic Product Specification 2SA1062 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SC2486 ・High collector power dissipation APPLICATIONS ・High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SA1062

Abstract: HIGH POWER PNP TRANSISTORS 2SC2486
Contextual Info: Inchange Semiconductor Product Specification 2SA1062 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SC2486 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION

2SA1062

Abstract: 2SC2486
Contextual Info: SavantIC Semiconductor Product Specification 2SA1062 Silicon PNP Power Transistors DESCRIPTION With TO-3PN package •Complement to type 2SC2486 ·High collector power dissipation · APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION

2SC2486

Abstract: 2SA1062
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1062 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High Power Dissipation ·Complement to Type 2SC2486 APPLICATIONS ·Designed for high power audio frequency amplifier

2Sc2486

Abstract: 2SA1062
Contextual Info: PANASONIC INDL/ELEK -CIO 1EE 1 • bTBSÛSS QQ104S1 T ■ Silicon Epitaxal Base ' lesa Transistor T-33-Z1 r 33 3 2SA1062 PNP) 2SC2486(NPN) TOP-3 Package (See Page 36 For Dimensions)_ 2SA1062 (PNPÌ Absolute Maximum Ratings (Ta=25°C) Item

2SC2486

Abstract: 2SA1062 2SA106 2SC248
Contextual Info: Inchange Semiconductor Product Specification 2SC2486 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1062 ・High collector power dissipation APPLICATIONS ・High power audio frequency amplifier PINNING PIN DESCRIPTION

2SA1062

Abstract: 2SC2486
Contextual Info: PANASONIC INDL/ELEK -CIC> S i E ‘ l p l i c i e o t s a 15E » • bT3SÔS5 0010451 T ■ n T x a a T l r B a a n s s i e s - 3 3 3 3 r t o - z 2SA1062 PNP 2SC2486(NPN) i 3 r TOP-3 Package (See Page 36 For Dimensions)_ 2SA1062 (PNPÌ Absolute Maximum Ratings (Ta=25°C)

Contextual Info: PANASONIC INDL/ELEK -CIO 1EE 1 • bTBSÛSS QQ104S1 T ■ Silicon Epitaxal Base ‘ lesa Transistor T-33-Z1 r 33 3 2SA1062 PNP) 2SC2486(NPN) TOP-3 Package (See Page 36 For Dimensions)_ 2SA1062 (PNPÌ Absolute Maximum Ratings (Ta=25°C) Item

2SC2486

Abstract: 2SA1062
Contextual Info: SavantIC Semiconductor Product Specification 2SC2486 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SA1062 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION

Contextual Info: j Jb£.mL-L,onaiLetoi L/^ 10ducts. One 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1062 Silicon PNP Power Transistor a <x DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-120V(Min)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

1032B

Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
Contextual Info: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD

2SA1441

Abstract: 2sA1441 nec 2SA1115 2SA1263 2SA1232 2SA1142 2SA1310 2SA1018 2SA1624 2SB1197K
Contextual Info: 32 - tt 2 SA 1465 0 a 2SA 1466 B 2SA 1467 i ED M £ T y p e No. m 146 8 € Manuf. H » S ANYO 2SB698 2SA 2 SA 2SA 1471 1 474 1 47 5 1 47 6 = •;# ^ ^ = n ^ = # ft 2SA 1477 = 3 2SA 1478 = ;¥ H. ft 2SA 1479 2SA 1480 - ✓ J 2SA 1481 2SA 1482 2SA 1485 2 SA 1487

2sa1046

Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK