2N655 Search Results

2N6550

Abstract: CD860 cm8601 CM860 2N6550 equivalent ultra low igss pA "TO-72 package"
Contextual Info: n t a C R Y S T A W ebsite: WWW.Crystalonics.com L O N I C S ^ C Fax: i 631-585-4858 Phone: (631-981-6140) * See price list fo r ordering inform ation ULTRA LOW NOISE 2N6550 CM 860 SILI CON E P I T A X I A L J U N C T I O N CICI H CCCCfT TRANQIQTHR M f U AI /~\

2N3633

Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

2N6558

Abstract: 2N6557 2N6559
Contextual Info: Datasheet 2N6557 2N6558 2N6559 NPN SILICON Hlr - VOLTAGE TRANSISTOR F o n fH i• i i G m i wm i ^ - - ■ semiconductor Corp- JEDEC 7 j -202 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

Contextual Info: 9 -9 7 B 27 2N6550 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AMPLIFIER A bsolu te m axim um ratin gs at T * =25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuious Forward Gate Current - 20 V 50 mA Continuous Device Power Dissipation

2n4889

Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2N6550

Abstract: ultra low igss pA AAHB low igss 2N6550/CM860
Contextual Info: ULTRA LOW NOISE h â 2N6550 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR r • GEOMETRY 424, PG. 58 ¿ 3 0 MAX The 2N 6550 is a high, Jn/lD lo w noise ju n c tio n F.E.T. fo r lo w level a m p lifie r use. The min. gm o f 25,000 ^imho assures a voltage gain o f 25 m in. w ith a 1K

Tip300

Abstract: 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

BC337 BC547

Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
Contextual Info: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150

BC337/BC327

Abstract: BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR T0-92 BC547 to92 BC237 national 2N4032 2N6554 PN2907A
Contextual Info: •c NATL 50 45 mA Max Min Max 2N4032 1000 100 300 2N6554 NPN 60 SEniCOND (DISCRETE ) (Volts) Min PNP NF (dB) Max 372 • NSCS P d (Arnb) Package (mW) @25°C mA (MHz) Min mA 100 150 50 TO-39 800 1500 80 300 50 75 50 T0-202(55) 1333 MMBT2907A 600 100 300

2N6552

Abstract: 2N6555 2N6551 2n6556 2N6553 2n6554 TO202
Contextual Info: 2N6551 2N6552 2N6553 2N6554 2N6555 2N6556 NPN PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6551, 2N6554 series types are complementary silicon transistors manufactured by the epitaxial planar process, designed

2N6550

Abstract: CD860 teledyne transistor teledyne crystalonics
Contextual Info: TELEDY NE COMPONENTS SÔE D • ôTlTbûa GQQbSS4 2 ■ 7 < Il - * 5 ULTRA LOW NOISE 2N6550 CM860 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 424 .230 MAX. 195t.005- Lo The 2 N 6 5 5 0 / C M 8 6 0 is a high, gm />D low noise Junction F.E.T. for low level

2N6718 NATIONAL SEMICONDUCTOR

Abstract: T0-237 NSDU07 bc640 to237 2N6717 T0237 2N6730 2N6718 mpsa06 2N3019
Contextual Info: bflE J> m fc,SD113D ODBTSIS STT • NSC5 NATL SEHICOND D I S C R E T E Devices V C£0(su*l> 100 PUP NPN 2N6553 2N6718 80 2N6730 mA (MHz) Min IDA NF (dB) Max P d (Amb) Package (mW) Max Min Max 1000 80 250 50 75 100 T0-202(55) 1333 1000 50 250 250 50 200

2U 37 diode

Abstract: M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 BSX46•6 MH8106 MS106 MS106 BCX55-6 TN2017 2N2017 BC141B ~g~~t~g 55 60 65 70 2N2197 BD415 2N6551 BC141C BSX46·16 BCX55·16 2SD1615 2SD1615 2S01615A 2SD1615A BD320 SD1527·8 BFR22

2N6551

Abstract: 2N6556 2N6553 2N6552 2N6555 2N6554 TO-202 transistor NPN 2n6554
Contextual Info: Datasheet Central Sem icondu ctor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 NPN PNP 2N6551 2N 6552 2N6553 2N6554 2N6555 2N6556 COMPLEMENTARY SILICON TRANSISTOR JEDEC T 0 -2 0 2 CASE Manufacturers of World Class Discrete Semiconductors

NSDU07

Abstract: bc640 to237 2n6555 T0202 2M6718 2N4033
Contextual Info: bflE T> m t.SD113D □OB'ISIS STT • N S C 5 NATL SEMICOND DISCRETE Devices VCE0(su*t) (Wilts) Min 100 PNP NPN 2N6553 2M6718 80 2N6730 NF (dB) Max Pd (Amb) Package (mW) Max Min Max 1000 80 250 50 75 100 T0-202(55) 1333 1000 50 250 250 50 200 TO-237{91 )

Contextual Info: Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N6550 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA =25°C Low-Noise, High Gain Amplifier Reverse Gate Source & Reverse Gate Drain Voltage

bc856 to 92

Abstract: bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 8C556 2N3859A NATIONAL SEMICONDUCTOR T0-237
Contextual Info: ]> • £>501130 0 0 3 T 5 1 b General Purpose Amplifiers and Switches continued; Devices (Volts Min PNP NPN 65 (mA) Max Min Max 450 BC546 100 110 BC846 100 110 2N4036 60 hFE@ lc k V CE0(m b 1) fT @»c mA (MHz) Min mA NF (dB) Max (mW) @25°C 2.0 300 Typ

Contextual Info: Power Transistors TO-202 Case TYPE NO. NPN PNP @ Ic hFE ic PD BVCBO BVCEO A (W) 00 (V) MIN MIN MIN MAX MAX (mA) VCE(SAT) @ IC (V) (A) MAX n (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

transistor crossreference

Abstract: NTE123AP NPN transistor ECB TO-92 TIS98 "cross-reference" 2N3906 NPN Transistor NTE159 ebc Transistor BF859A TO-202 transistor NPN SK3232
Contextual Info: Black White Vector Monitor Transistor Cross-Reference Location Deflection "X" Deflection "Y" "Other" Part Wells-Gardner 19V2000 Cross Type Upgrade Location Part Electrohome G05-802 Cross Type Upgrade Q701 Q702 Q703 Q704 Q705 Q706 Q707 na TPS98 TPS98 TPS98

MK1V135

Abstract: c3419 je270 332 14401 ctx200
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 3 4 1 9 -1 L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . d e s ig n e d as th e h e a rt o f a c irc u it to p ro v id e BOR SH T fu n c tio n s f o r te le p h o n e s e rv ic e in C e n tra l O ffic e , P A B X , a n d S u b s c rib e r C ar­

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

REF101KM

Abstract: REF101SM 2N6551 burr brown tame OPA27 REF101 REF101JM REF101RM
Contextual Info: REF101 Precision VOLTAGE REFERENCE FEATURES APPLICATIONS ● +10.00V OUTPUT ● HIGH ACCURACY: ±0.005V ● VERY LOW DRIFT: 1ppm/°C max ● PRECISION CALIBRATED VOLTAGE STANDARD ● TRANSDUCER EXCITATION ● D/A AND A/D CONVERTER REFERENCE ● PRECISION CURRENT REFERENCE