2N613 Search Results

2N6132

Contextual Info: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 10 A PEAK Ib 3.0 A V ce -40 V P diss 50 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C

2N6129

Abstract: 2N6131 2N6132 2N6133 2N6134 2N6130
Contextual Info: Inchange Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ・Power amplifier and medium speed switching applications

2N6133

Abstract: 2N6132 2N6134 2N612 2N6129 2N6131 2n6134 datasheet 2N6130
Contextual Info: Inchange Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ・Power amplifier and medium speed switching applications

2N6132

Contextual Info: 2N6132 SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 220AB DIMENSIONS mm min min max A 10 10.4 0.393 0.409 0.626 B 15.2 15.9 0.598 C 12.7 13 7 0.500 0.539 6.2 6.6

2N6130

Abstract: 2N6131 2N6129 2N6132 2N6133 2N6134
Contextual Info: SavantIC Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High power dissipation ·Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ·Power amplifier and medium speed switching applications

2N6137

Abstract: 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX
Contextual Info: INCH-PÙUNDI MIL-S-19500/493A ER 30 MARCH 1990 SUPERSEDING- MIL-S-19500/493(EL) 22 January 1974 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, JAN, JANTX, AND JANTXV

2N6138

Abstract: 2N6116 DSCC 493a 2N6117 2N6118 2N6137 transistor cr
Contextual Info: INCH-POUND NOTICE OF INACTIVATION FOR NEW DESIGN MIL-S-19500/493A NOTICE 2 5 December 2001 MILITARY SPECIFICATION Semiconductor Device, PNPN, Thysistor, Silicon, Programable Unijunction Transistor , Types 2N6116, 2N6117, 2N6118, 2N6137, 2N6138 JAN, JANTX, JANTXV

2N6137

Abstract: UNITRODE U-66 UNITRODE SCR unijunction application note
Contextual Info: 2N6137 PUTs Military, Planar, TO-18, Hermetic FEATURES • Available as JAN and JANTX types • — 55°C to +125°C Temperature Range for Timing and Oscillator Circuits • U < 10/jA at T = — 55°C lv ^ 40„A at T = -f125°C • Programmable 77, RBB, lP and lv

2N6133

Abstract: 2N6132 2N6129 2N6130 2N6131 2N6134
Contextual Info: SavantIC Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High power dissipation ·Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ·Power amplifier and medium speed switching applications

UNITRODE U-66

Contextual Info: 2N6137 PUTs Military, Planar, TO-18, Hermetic FEATU RES DESCRIPTION • Available as JA N and JAN TX types per MIL standard 1 9 5 00 /4 93 • — 55°C to +125°C Tem perature Range for T im in g and O sc illa to r C irc u its • Ip < IOjuA at T = — 55°C

2N6137

Abstract: unijunction application note
Contextual Info: 2N6137 PUTs Military, Planar, TO-18, Hermetic / - a s ' - o FEATURES • Available as JAN and JANTX types per MIL standard 19500/493 • — to -f-125’ 0 Temperature Range for Timing and Oscillator Circuits • l , < l V A a t T = -55»C I , > 40*A at T = +125'C

AF306

Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284

KT835B

Abstract: B0544 b0202 2SB75 2SB55B 2SB946 2SB61B 2SB61 2N5981 2SB518
Contextual Info: POWER SILICON PNP Item Number Part Number Manufacturer Ic Max A V(BR)CEO Min (V) fT hFE Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) PD Max (W) TOper Max (Oe) Package Style I(C) >= 5 A, (Co nt' d) 5 -10 2SB1224 MJF6107 2N61 06 2N6107 40874 2N6134 B0722 2N5872

2n6027

Abstract: 2N602S 2n6027 PUT 2N6028
Contextual Info: B a c k to S ilic o n C o n tro lle d R ectifiers 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT

Unijunction

Abstract: Programmable unijunction 2N6116 PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit 2N6027
Contextual Info: 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT anode anode Gate N Gate N N N cathode cathode G<V " •N

Contextual Info: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK -40 V ce 50 W @ Tc = 25 °C P diss Tj -65 °C t o +150 °C T -65 °C t o +150 °C

2N6131

Abstract: 2N6129 2N6130 2N6132 2N6133 2N6134
Contextual Info: Product Specification www.jmnic.com 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ・Power amplifier and medium speed switching applications

Contextual Info: One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N6137 ABSOLUTE MAXIMUM RATINOS Anode-to-Catrwde FcMward Voltage, V>IC Anade-to-Cathod* Rewrss Voltage, V/K) Gate-to-CaUiod* Forward Voltftge, V€K

Contextual Info: MICROSENI CORP/ WATERTOWN SDE » PUTs TBMTTLiB 0G12SMD ETLl • U N I T 2N6137 Military, Planar, TO-18, Hermetic 7 -¿LS~-Ó < FEATURES • Available as JAN and JANTX types per MIL standard 1 9 5 0 0 /4 9 3 • —55°C to -|-125°C Tem perature Range fo r T im ing and O scilla to r C ircu its

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N6136

Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A
Contextual Info: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum

2N6256

Abstract: 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SB553Y

Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15