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    B0722 Search Results

    B0722 Datasheets (6)

    DB Lectro
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    B07-22-A-A-1
    DB Lectro FEMALE HEADER PROFILE : 8.4mm RIGHT ANGLE Scan PDF 248.92KB 1
    B07-22-A-B-1
    DB Lectro FEMALE HEADER PROFILE : 8.4mm RIGHT ANGLE Scan PDF 248.92KB 1
    B07-22-A-C-1
    DB Lectro FEMALE HEADER PROFILE : 8.4mm RIGHT ANGLE Scan PDF 248.92KB 1
    B07-22-A-D-1
    DB Lectro FEMALE HEADER PROFILE : 8.4mm RIGHT ANGLE Scan PDF 248.92KB 1
    B07-22-A-G-1
    DB Lectro FEMALE HEADER PROFILE : 8.4mm RIGHT ANGLE Scan PDF 248.92KB 1
    B0722AT1
    DB Lectro FEMALE HEADER PROFILE : 8.4mm RIGHT ANGLE Scan PDF 248.92KB 1
    SF Impression Pixel

    B0722 Price and Stock

    YAGEO Corporation

    YAGEO Corporation RT0805BRB07221KL

    SMD Chip Resistor, 221 kOhm, ? 0.1%, 125 mW, 0805 [2012 Metric], Thin Film - Tape and Reel (Alt: RT0805BRB07221KL)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RT0805BRB07221KL Tape & Reel 15 Weeks 5,000
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    TME RT0805BRB07221KL 25,000 5,000
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    Avnet Abacus RT0805BRB07221KL Tape & Reel 23 Weeks 5,000
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    YAGEO Corporation RT0402BRB07226RL

    SMD Chip Resistor, 226 Ohm, ? 0.1%, 63 mW, 0402 [1005 Metric], Thin Film - Tape and Reel (Alt: RT0402BRB07226RL)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RT0402BRB07226RL Tape & Reel 15 Weeks 10,000
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    YAGEO Corporation RT0805BRB0722K6L

    SMD Chip Resistor, 22.6 kOhm, ? 0.1%, 125 mW, 0805 [2012 Metric], Thin Film - Tape and Reel (Alt: RT0805BRB0722K6L)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RT0805BRB0722K6L Tape & Reel 15 Weeks 5,000
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    Avnet Abacus RT0805BRB0722K6L 23 Weeks 5,000
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    YAGEO Corporation RT0402BRB0722RL

    SMD Chip Resistor, 22 Ohm, ? 0.1%, 63 mW, 0402 [1005 Metric], Thin Film - Tape and Reel (Alt: RT0402BRB0722RL)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RT0402BRB0722RL Tape & Reel 15 Weeks 10,000
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    YAGEO Corporation RT0402BRB07220RL

    SMD Chip Resistor, 220 Ohm, ? 0.1%, 63 mW, 0402 [1005 Metric], Thin Film - Tape and Reel (Alt: RT0402BRB07220RL)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RT0402BRB07220RL Tape & Reel 15 Weeks 10,000
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    B0722 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KT835B

    Abstract: B0544 b0202 2SB75 2SB55B 2SB946 2SB61B 2SB61 2N5981 2SB518
    Contextual Info: POWER SILICON PNP Item Number Part Number Manufacturer Ic Max A V(BR)CEO Min (V) fT hFE Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) PD Max (W) TOper Max (Oe) Package Style I(C) >= 5 A, (Co nt' d) 5 -10 2SB1224 MJF6107 2N61 06 2N6107 40874 2N6134 B0722 2N5872


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    2sb1224mjf61072n61072n6134+16b07222n58722n6318mj67012sa6632sa627kt835bb0544b02022sb752sb55b2sb9462sb61b2sb612n59812sb518 PDF

    FET marking code ndew

    Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    lnd250dsfp-lnd250a091208fet marking code ndew PDF

    Contextual Info: TN2124 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


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    tn2124dsfp-tn2124b022309 PDF

    Contextual Info: VN2110 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain The Supertex VN2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure


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    vn2110dsfp-vn2110a122308 PDF

    Contextual Info: TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


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    tn2130dsfp-tn2130a022309 PDF

    VN2110K1-G

    Abstract: SOT23Die 125OC VN2110 VN2110ND
    Contextual Info: VN2110 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► The Supertex VN2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    vn2110dsfp-vn2110a122308vn2110k1-g+3sot23die125ocvn2110nd PDF

    TN2106K1-G

    Abstract: TO-236A 125OC TN2106 TN2106N3-G
    Contextual Info: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    tn2106dsfp-tn2106a091208tn2106k1-g+3to-236a125octn2106n3-g PDF

    SOT-23 IP

    Abstract: TP2104 Diode SOT-23 marking 3V
    Contextual Info: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    tp2104dsfp-tp2104a022309sot-23 ip+1diode sot-23 marking 3v PDF

    DN3135K1-G

    Abstract: b1031 sot-89 MARKING CODE ab 125OC DN3135 DN3135N8-G
    Contextual Info: DN3135 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN3135 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    dn3135dsfp-dn3135b103108dn3135k1-g+4b1031sot-89 marking code ab125ocdn3135n8-g PDF

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
    Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    lnd150dsfp-lnd150a030609transistor marking code 12w sot-23+812w sot 23 package marking codemarking 12w sot2312w marking code of transistor sot 2312w sot-23sot-23 12w12w marking sot23ln1end150 PDF

    marking N8 sot-23

    Contextual Info: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    tn5335dsfp-tn5335a050108marking n8 sot-23 PDF

    Contextual Info: Supertex inc. HV5122 32-Channel Serial to Parallel Converter With Open Drain Outputs Features ►► Processed with HVCMOS technology ►► Output voltages to 225V using a ramped supply voltage ►► SINK current minimum 100mA ►► Shift register speed 8.0MHz


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    hv512232-channel100madsfp-hv5122+1b072213 PDF

    tn2130k1-g

    Abstract: TN2130K1G
    Contextual Info: TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    tn2130dsfp-tn2130a091208tn2130k1-g+1tn2130k1g PDF

    Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    lnd250dsfp-lnd250a103108 PDF

    SOT-23 IP

    Abstract: TN2130K1-G 125OC TN2130 mos n-channel SOT-23
    Contextual Info: TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    tn2130dsfp-tn2130a022309sot-23 ip+3tn2130k1-g125ocmos n-channel sot-23 PDF

    codes marking 2N7002

    Abstract: 2N7002 MARKING 702W 125OC 2N7002 2N7002-G B0910 transistor 702w
    Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    2n7002dsfp-2n7002b091008codes marking 2n7002+62n7002 marking702w125oc2n7002-gb0910transistor 702w PDF

    Contextual Info: TP5322 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    tp5322110pfdsfp-tp5322b022309 PDF

    Contextual Info: TN2425 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    tn2425dsfp-tn2425a091208 PDF

    mos fet marking k1

    Contextual Info: TP5335 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex TP5335 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    tp5335dsfp-tp5335a091508mos fet marking k1 PDF

    b0915

    Contextual Info: TP5322 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    tp5322110pfdsfp-tp5322b091508+1b0915 PDF

    Contextual Info: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


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    tn2106dsfp-tn2106a091208 PDF

    sot-89 MARKING CODE ab

    Abstract: FET SOT-89 fet sot-89 marking code fet sot-89 product marking TN5335 TN5335K1-G TN5335N8-G FET SOT-89 N-Channel
    Contextual Info: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    tn5335dsfp-tn5335a091408sot-89 marking code ab+6fet sot-89fet sot-89 marking codefet sot-89 product markingtn5335k1-gtn5335n8-gfet sot-89 n-channel PDF

    HV5308PG-B

    Abstract: HV5308PG-B-G
    Contextual Info: Supertex inc. HV5308B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features ►► Processed with HVCMOS technology ►► Low power level shifting ►► Source/sink current minimum 20mA ►► Shift register speed 8.0MHz ►► Latched data outputs


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    hv5308b32-channeldsfp-hv5308bb072213+2hv5308pg-bhv5308pg-b-g PDF

    jedec package TO-236AB

    Contextual Info: Package Outline 3-Lead TO-236AB SOT-23 Package Outline (K1/T) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch View B Top View View B View A - A Side View Symbol Dimension (mm) A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90


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    o-236abot-23o-236dspd-3to236abk1+2b072208jedec package to-236ab PDF