LND250 Search Results

N-Channel Depletion-Mode MOSFET high voltage

Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
Contextual Info: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.

FET marking code ndew

Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

Contextual Info: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information If Order Number / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0K& 1.0mA LND250K1 BV dsx / b v dgx 500V Idss where = 2-week alpha date code *S am e as SO T-23. All units shipped on 3,000 piece ca rrie r tape reels.

Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

0413

Abstract: LND250K1 LNE150K1 jedec package TO-236AB 00146
Contextual Info: Package Outline 0.020 0.50 0.0146 (0.37) 0.0984 (2.50) 0.0827 (2.10) 2 1 3 0.0551 (1.40) 0.0472 (1.20) 1-Gate 2-Drain 3-Source For LND250K1 and LNE150K1 only: 0.0236 (0.60) 0.0177 (0.45) 0.0807 (2.04) 0.0701 (1.78) 1-Gate 2-Source 3-Drain 0.027 NOM 0.1197 (3.04)

nchannel

Abstract: DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel
Contextual Info: Chapter 8 – Depletion Mode MOSFETs DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 N-Channel; 300V; 12Ω N-Channel; 350V; 25Ω N-Channel; 400V; 25Ω N-Channel; 240V; 4Ω N-Channel; 400V; 6.0Ω N-Channel; 500V; 1.0KΩ N-Channel; 500V; 1.0KΩ

N-Channel Depletion-Mode MOSFET

Contextual Info: LND250 P relim ina ry N-Channel Depletion-Mode MOSFET Ordering Information Order Num ber / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0mA LND250K1 where * = 2-week alpha date code BVd s x / ^DS(ON) Idss B V dgx (max) 500V 1.0KQ *S am e as SO T-23. All units shipped on 3,000 piece carrier tape reels.

5257

Abstract: LND250K1
Contextual Info: Package Outlines TO-236AB SOT-23:K1 0.0173 ± 0.0027 (0.4394 ± 0.0685) B For LND250K1 only: 0.0906 ± 0.0079 (2.299 ± 0.199) 2 0.0512 ± 0.004 (1.3004 ± 0.1016) H 1 3 S e 0.0754 ± 0.0053 (1.915 ± 0.135) 1-Gate 2-Drain 3-Source 1-Gate 2-Source 3-Drain

5257

Abstract: LND250K1
Contextual Info: Package Outlines TO-236AB SOT-23:K1 0.0173 ± 0.0027 (0.4394 ± 0.0685) B For LND250K1 only: 0.0906 ± 0.0079 (2.299 ± 0.199) 2 0.0512 ± 0.004 (1.3004 ± 0.1016) H 1 3 S e 0.0754 ± 0.0053 (1.915 ± 0.135) 1-Gate 2-Drain 3-Source 1-Gate 2-Source 3-Drain

LND250

Abstract: LND250K1 n-channel 500v sot 23 Power MOSFET MOSFET IGSS 100nA VDS 20V
Contextual Info: LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

MOSFET IGSS 100nA VDS 20V

Abstract: N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode ramp generator depletion MOSFET n mosfet depletion MOSFET N SOT-23 n channel depletion MOSFET power relay N-channel mosfet
Contextual Info: LND250 Preliminary N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

FET marking code ndew

Abstract: LND250 n-channel SOT-23 Depletion Mode LND150k1-G 125OC LND250K1-G depletion mode ramp generator Diode Marking ef
Contextual Info: LND250 Features ► ► ► ► ► ► ► R fo R ef r e er N co ew m to m LN De e n s D i d 15 gn e d 0 s K 1G N-Channel Depletion-Mode DMOS FET General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability

N-Channel Depletion-Mode MOSFET

Abstract: MOSFET IGSS 100nA VDS 20V NDE SOT23 MARKING LND250 LND250K1 iGSS 100nA Vgs 0v DATE CODE FOR SUPERTEX n-channel 500v sot 23 Power MOSFET
Contextual Info: LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Contextual Info: Supertex inc. LND250 N-Channel Depletion-Mode DMOS FET General Description Features ► ► ► ► ► ► ► Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

n5 sot-89

Abstract: CH06F
Contextual Info: CH06F VGS off IDSS SOT-23 K1 TO-92 N3 TO-220 N5 SOT-89 N8 Device Number BVDSX min (V) RDS(ON) max (Ω) min (V) max (V) min (mA) DN3525 250 6.0 -1.5 -3.5 300.0 VF35 DN3125 250 20 -1.5 -3.5 200.0 VF31 DN25301 300 12 -1.0 -3.5 200.0 DN3535 350 10 -1.5 -3.5

Contextual Info: DN3535 DN3535 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die 350V 10Ω 200mA DN3535N8 DN3535NW * Same as SOT-89. Products shipped on 2000 piece carrier tape reels.

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

pj 72 diode

Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
Contextual Info: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .

DN2540N5

Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
Contextual Info: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5

VF21

Contextual Info: DN3125 DN3125 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 250V 20Ω 200mA Order Number / Package Die* DN3125NW * Die in wafer form. Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors

pj 89 diode

Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
Contextual Info: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­

jedec package TO-236AB

Abstract: K1 Package LND250K1 LNE150K1
Contextual Info: Package Outlines 0.020 0.50 0.0146 (0.37) 0.0984 (2.50) 0.0827 (2.10) 2 1 0.0413 (1.02) 0.0350 (0.89) 0.0551 (1.40) 0.0472 (1.20) 3 0.0052 (0.130) 0.0034 (0.085) 0.0236 (0.60) 0.0177 (0.45) 0.0807 (2.04) 0.0701 (1.78) 1-Gate 2-Drain 3-Source 0.1197 (3.04)

LND150N8

Abstract: LND250K1 LNE150K1 MS-012AA H1 SOT-89 LND150
Contextual Info: Package Outlines 0.770 +0.005 –0.010 ΦD 0.285 ± 0.015 0.065 ± 0.015 F A Seating Plane 0.040 ± 0.002 0.450 ± 0.030 Φb L 0.500 ± 0.010 DIA. 0.215 ± 0.005 e1 S 0.173 ± 0.005 R TYP. G r2 2 Mounting Holes 0.156 ± 0.005 0.430 ± 0.005 r1 ΦP e 0.665 ± 0.005