NCHANNEL Search Results

TC4007UBP

Contextual Info: TP^ fin"#7UDr/ 1IDD/UDl IMDC IU“UU C 2MOS DIGITAL IN T E G R A T E D CIR CU IT S IL IC O N M O N O L IT H IC TC4007UBP/TC4007UBF DUAL COMPLEMENTARY PAIR PLUS INVERTER TC4007UBP/UBF contains three elements of P-channel enhancement type MOS FET and three elements of Nchannel enhancement type MOS FET. One pair of Pchannel and N-channel functions as inverter and

j175 replacement

Contextual Info: LSJ175 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix J175 The LSJ175 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. When used in combination with the complimentary J/SST111 nchannel family, the LSJ175 simplifies series-shunt

Contextual Info: LSJ175 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix J175 The LSJ175 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. When used in combination with the complimentary J/SST111 nchannel family, the LSJ175 simplifies series-shunt

Contextual Info: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

Trac12

Abstract: AC12 DH16 DS16 WCS17 ice power 200 asc
Contextual Info: O B JE C T IV E S P E C IF IC A T IO N 2690-2— F ,I,N • 2690-3— F ,I,N • 2690-4— F,I,N D E S C R I P T IO N FEATU RES The 2690 is fab ricate d w ith d o u b le -p o ly nchannel s ilic o n gate te c h n o lo g y fo r high perform ance and hig h fu n c tio n a l d e nsity. It

8B221

Abstract: 3508D FST163212 IDT74FST163212 generator 3508 1a23a 3508
Contextual Info: 24-BIT BUS EXCHANGE SWITCH IDT74FST163212 Integrated Device Technology, Inc. FEATURES: source capability. They generate little or no noise of their own while providing a low resistance path for an external driver. These devices connect input and output ports through an nchannel FET. When the gate-to-source junction of this FET

MPS top marking

Abstract: LN60A01 LN60A01E D3S34 LN60A01EP MS-001 JESD51-7 LN60 MPS top marking A
Contextual Info: LN60A01 600V, Triple N-Channel MOSFET with Common Gate Control The Future of Analog IC Technology DESCRIPTION FEATURES The LN60A01 is a three channel, 600V NChannel, enhancement mode power FET manufactured in MPS's proprietary, highvoltage DMOS technology.

ta9192

Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15
Contextual Info: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,

Contextual Info: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.700Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

Contextual Info: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 23A, 200V, rDS ON = 0.115Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

MLP8 package

Abstract: MLP8 FOOTPRINT FAN3111C
Contextual Info: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description ƒ ƒ ƒ ƒ ƒ The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications. 1.4A Peak Sink / Source at VDD = 12V 1.1A Sink / 0.9A Source at VOUT = 6V

IRF820

Abstract: irf-82
Contextual Info: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()

IRFP150N

Contextual Info: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,

MP6507

Contextual Info: MP6507 2.7V-to-15V, 700mA, Bipolar Stepper-Motor Driver with Integrated MOSFETs The Future of Analog IC Technology FEATURES DESCRIPTION The MP6507 is a bipolar stepper-motor driver with dual, built-in full-bridges consisting of Nchannel power MOSFETs. It operates from a supply voltage range of 2.7V

FET Spec sheet

Abstract: mitsubishi microwave MGFC1801 4468 fet fet 4468
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The MGFC1801 medium-power GaAs FET with an Nchannel Schottky gate is designed for use in S to X band amplifiers and oscillators.

Contextual Info: Central sem iconductor Corp. CM PF4416A SILICON N-CHANNEL JFET DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPF4416A type is an epoxy molded NChannel Silicon Junction Field Effect Transistor manufactured in an SOT-23 case, designed for VHF amplifier and mixer applications.

Contextual Info: 24-B IT BUS SW IT CH IDT74FST1 63211 lating two ports without providing any inherent current sink or source capability. They generate little or no noise of their own while providing a low resistance path for an external driver. These devices connect input and output ports through an nchannel FET. When the gate-to-source junction of this FET

TA-0118

Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS
Contextual Info: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

Piezoelectric 1Mhz

Abstract: piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G
Contextual Info: TC1550 Initial Release N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550TG-G consists of a high voltage Nchannel and P-channel MOSFET in an SO-8 package. These are enhancement-mode normally-off transistors

GRM21BR71C475KA73L

Contextual Info: MIC5019 Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump General Description The MIC5019 is a high-side MOSFET driver with integrated charge pump designed to switch an NChannel enhancement type MOSFET control signal in high-side or low–side applications.

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,

Rad Hard in Fairchild for MOSFET

Abstract: mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3
Contextual Info: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 78 /Subject (4A, 250V, 0.700 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.700

mlp8 Package

Abstract: mlp8 land pattern MLP8 FOOTPRINT fairchild MLP8 FAN3111C
Contextual Info: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description • •     1.4A Peak Sink / Source at VDD = 12V The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications.