27BSC Search Results

Contextual Info: APR 7 1993 Comlinear Corporation Ultra Low Noise Wideband Op Amp Preliminary CLC425 APPLICA TIO NS: FEATURES typical : • • • • • • • • • • • • • • • • instrum entation sense am plifiers ultrasound pre-am ps m agnetic tape & disk pre-am ps

SEMTECH 11BSC

Abstract: 5v6bsb colour code diode zener SEMTECH 11BSB 27BSB 20BSB 10BS 10BSA 10BSB 11BS
Contextual Info: BS Series min. 27.5 SILICON PLANAR ZENER DIODES max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.45 Glass case JEDEC DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Power Dissipation Symbol Ptot Value Unit 1)

2n3817

Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
Contextual Info: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEON. ^AYTUFnin RAYTHEON J 0005557 S E M IC O N D U C T O R 94D 05527 Low Level, Low Noise D j - z - f - Z ' l H j g h G a j n A m p | j f ¡e r s Popular Types Description G eneral purpose a m p lifier for low level, low noise and high gain amplifier

30BSD

Abstract: 27BSB 3v3bs 20BSB BS Series 10BSB 10BSC 11BS 11BSA 11BSB
Contextual Info: BS Series SILICON PLANAR ZENER DIODES Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Power Dissipation Ptot Value Unit 1) mW 500

27BSB

Abstract: 20BSB 22bsc 6.2BSB 12bsb 20bsc 8.2BSB 10BS 10BSA 10BSB
Contextual Info: BZM55C-BS SERIES 4.7V to 36V SILICON PLANAR ZENER DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * LS-31 Micro-melf Glass Package .0 53 m (1. ax 35 ) . MICRO-MELF .049 (1.25) DIA. .047 (1.20) R > 2.5 Glass .083 (2.10) .075 (1.90) .010 (0.26) .008 (0.21)

Contextual Info: 1 Chip CODEC for Digital Answering phone KS8620 INTRODUCTION The KS8620 consists of on-chip PCM encoders, decoders PCM CODECs and PCM line filter. This 16-DIP-300 device provide all the functions required to interface a fullduplex voice telephone circuit, digital answering phone.

ka2297

Contextual Info: KA2297 AM/FM TUNER INTRODUCTION T h e K A 2 2 7 9 is a m o n o lith ic in te rg ra te d c irc u it w h ic h c o n s is t o f F M F /E A M /F M IF a n d D E T A M P . T h e K A 2 2 9 7 is no a d ju s tm e n t A M /F M IF, D E T coil 1 6 -D IP -3 0 0 A FEATURES

4947

Abstract: 2gb2 ANPEC 27BSC APM4947
Contextual Info: APM4947 Dual P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-2.5A , RDS ON =90mΩ(typ.) @ VGS=-10V • • • 5 RDS(ON)=145mΩ(typ.) @ VGS=-4.5V  / Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged & , %

Contextual Info: i 8 '.991 Product Specifications Linear Integrated RV4145 Raytheon RV4145 Low Power Ground Fault Interrupter Contained internally are a 26V zener shunt regulator, an op amp, and a SCR driver. With the addition of two sense transformers, a bridge

HY5117404A

Abstract: HY5117404Aj
Contextual Info: HYUNDAI HY5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

2N2937

Abstract: 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484
Contextual Info: RAYTHEON/ "ä ? SEMICONDUCTOR 7597360 D eT | 7 5 ^ 7 3 ^ 0 G G D B S a S Ì 27C RAYTHEON CO» D Low Level, Low Noise, High Gain Amplifiers RAYTHEON CL 0353 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS NPN Popular Types Description General purpose am plifier for low

CLC402A

Contextual Info: Low-Gain Op Amp with Fast 14-Bit Settling APPLICATIONS: FEATURES typical : • • • • • • • • • • high-accuracy A/D system s (12-14 bits) high-accuracy D/A converters high-speed com m unications IF signal processing video distribution CLC402

BZV55C

Abstract: 20BSB 10BSB zener diode 4.7V datasheet 10BS 10BSA 10BSC 11BS 11BSA BZV55-C
Contextual Info: BZV55C-BS SERIES 4.7V to 36V SILICON PLANAR ZENER DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * LL-34 Mini-MELF Package * Hermetically Sealed, Glass Silicon Diodes SOD-80C .059(1.50) .056(1.42) R.004(0.10) .112(0.30) .112(0.30) .057(1.45) .053(1.35)

Contextual Info: RAYTHEON/ SEMICONDUCTOR 33E D • 7S^73t,Q □□07471 1 B f R T N Product Specifications Sm all S ign a l Transistors C B NPN R a y tfe & o a i 1 7=-27-2 p * 7~-27-27 Medium Current General Purpose Amplifiers and Switches C B NPN Description General purpose medium power amplifier and

Contextual Info: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran­

ANPEC

Abstract: Anpec Electronics APM9935 9935 mosfet A999 27BSC APM9935K MARKING CODE 9935
Contextual Info: APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -20V/-6A, RDS ON =45mΩ(max.) @ VGS=-4.5V 5 RDS(ON)=65mΩ(max.) @ VGS=-2.5V  / Super High Dense Cell Design for Extremely & , % , Low RDS(ON) 5 ! $ , Reliable and Rugged

zener 6c2

Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
Contextual Info: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

27BSB

Abstract: 3.9BS 39BSB 10BSB 20BSB 10BS 10BSA 10BSC 11BS 11BSA
Contextual Info: BS Series SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Zener Current see table “Characteristics” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

27BSB

Abstract: 20BSB 24BSB 3.9BS 4.7BSB 6.2BSB 10BS 10BSA 8.2BS 10BSC
Contextual Info: BS Series SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Zener Current see table “Characteristics” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

27BSB

Abstract: 3v3bs 22bsc 20BSB 39bsb 10BS 10BSA 10BSB 10BSC 11BS
Contextual Info: BS Series min. 27.5 SILICON PLANAR ZENER DIODES max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.45 Glass case JEDEC DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Power Dissipation Symbol Ptot Value Unit 1)

ANPEC

Abstract: APM4429 Anpec Electronics diode marking H2
Contextual Info: APM4429 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-13A, RDS ON = 8mΩ(typ.) @ VGS = -20V 5 RDS(ON) = 9mΩ(typ.) @ VGS = -10V RDS(ON) =13mΩ(typ.) @ VGS = -4.5V • • •  5 Super High Density Cell Design & , % , 5 ! $ , / "

Contextual Info: _ i _ s-RAYTHEON/ bb SEMICONDUCTOR d e Its ^ L iO DOOSOñi O T - 3 7~<5Product Specifications Sm all Signal Transistors G A PNP Raytheon Low Level, General Purpose Amplifiers and Switches Description G A PNP General purpose low power amplifier and

sp3725

Abstract: 2N3252 raytheon 2n
Contextual Info: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEO N. D E | ? 5 c173t.D 0 0 0 5 5 3 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS S E M IC O N D U C T O R 94D 05535 High Current, High Speed Switches RAYTHEON D T -ss*-/ 7 Popular Types Description T he CK is a gold doped transistor