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    MGFC1801 Search Results

    MGFC1801 Datasheets (9)

    Mitsubishi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MGFC1801
    Mitsubishi FOR MICROWAVE LOW-NOISE AMPLIFIER N-CHANNEL SCHOTTKY BARRIER GATE TYPE Scan PDF 225.56KB 6
    MGFC1801
    Mitsubishi FET, N Channel, ID 0.25 A Scan PDF 272.03KB 6
    MGFC1801
    Mitsubishi FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE Scan PDF 225.56KB 6
    MGFC1801-A01
    Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF 272.2KB 6
    MGFC1801-A011
    Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF 272.2KB 6
    MGFC1801-A012
    Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF 272.2KB 6
    MGFC1801-A013
    Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF 272.2KB 6
    MGFC1801-A02
    Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF 272.2KB 6
    MGFC1801-A03
    Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF 272.2KB 6

    MGFC1801 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FET Spec sheet

    Abstract: mitsubishi microwave MGFC1801 4468 fet fet 4468
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The MGFC1801 medium-power GaAs FET with an Nchannel Schottky gate is designed for use in S to X band amplifiers and oscillators.


    OCR Scan
    mgfc1801100mafet spec sheetmitsubishi microwave+24468 fetfet 4468 PDF

    mitsubishi microwave

    Abstract: MGFC1801 fet 4468 4468 fet
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The MGFC1801 medium-power GaAs FET with an Nchannel Schottky gate is designed for use in S to X band amplifiers and oscillators.


    OCR Scan
    mgfc1801100mamitsubishi microwavefet 4468+14468 fet PDF

    MGF1601A

    Abstract: MGF1801 MGF1601 MGF1801-01 MGFc1801
    Contextual Info: Die_ MGFC1801 Package MGF1601A MGF1801 ^M ITSUBISHI ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES Devices in this family are constructed using theMGFCl801 die. These devices are N-channel Schottky gate type and are suitable for use in medium output power amplifiers and


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    themgfcl801mgf1601a/1801mgfc1801mgf1601a+3mgf1801mgf1601mgf1801-01 PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776 PDF